Patents by Inventor Adam Daniel Polcyn

Adam Daniel Polcyn has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 6947234
    Abstract: Provided are a method, system, and program for performing error correction in a storage device having a magnetic storage medium. A plurality of zones are defined in the magnetic storage medium, wherein each zone comprises a plurality of addressable locations in the magnetic storage medium. A determination is made as to whether a change of a signal-to-noise ratio for one subject zone of the plurality of zones exceeds a threshold. An operation is performed to improve the signal-to-noise ratio with respect to the subject zone of the magnetic storage medium after determining that the change of the signal-to-noise ratio exceeds the threshold.
    Type: Grant
    Filed: July 23, 2002
    Date of Patent: September 20, 2005
    Assignee: International Business Machines Corporation
    Inventors: Bernd Lamberts, William Harlow McConnell, Adam Daniel Polcyn, Frank J. Wang
  • Patent number: 6852430
    Abstract: A thin film magnetic media structure with a pre-seed layer of CrTi is disclosed. The CrTi pre-seed layer presents an amorphous or nanocrystalline structure. The preferred seed layer is RuAl for use with the CrTi pre-seed layer. The use of the CrTi/RuAl bilayer structure provides superior adhesion to the substrate and resistance to scratching, as well as, excellent coercivity and signal-to-noise ratio (SNR) and reduced cost over the prior art. One embodiment of the invention sputter-deposits a CrTi pre-seed layer and a RuAl seed layer followed by at least one underlayer and at least one magnetic layer on a circumferentially polished substrate structure to achieve an Mrt orientation ratio greater than one. Two methods according to the invention allow the Mrt orientation ratio of the disk to be adjusted or maximized by varying the thickness of the RuAl seed layer and/or altering the atomic percentage of titanium in the pre-seed layer.
    Type: Grant
    Filed: January 29, 2002
    Date of Patent: February 8, 2005
    Assignee: Hitachi Global Storage Technologies Netherlands, B.V.
    Inventors: Xiaoping Bian, Mary Frances Doerner, James A. Hagan, Tim Minvielle, Mohammad Taghi Mirzamaani, Adam Daniel Polcyn, Kai Tang
  • Publication number: 20040017629
    Abstract: Provided are a method, system, and program for performing error correction in a storage device having a magnetic storage medium. A plurality of zones are defined in the magnetic storage medium, wherein each zone comprises a plurality of addressable locations in the magnetic storage medium. A determination is made as to whether a change of a signal-to-noise ratio for one subject zone of the plurality of zones exceeds a threshold. An operation is performed to improve the signal-to-noise ratio with respect to the subject zone of the magnetic storage medium after determining that the change of the signal-to-noise ratio exceeds the threshold.
    Type: Application
    Filed: July 23, 2002
    Publication date: January 29, 2004
    Applicant: International Business Machines Corporation
    Inventors: Bernd Lamberts, William Harlow McConnell, Adam Daniel Polcyn, Frank J. Wang
  • Publication number: 20030008178
    Abstract: A thin film magnetic media structure with a pre-seed layer of CrTi is disclosed. The CrTi pre-seed layer presents an amorphous or nanocrystalline structure. The preferred seed layer is RuAl for use with the CrTi pre-seed layer. The use of the CrTi/RuAl bilayer structure provides superior adhesion to the substrate and resistance to scratching, as well as, excellent coercivity and signal-to-noise ratio (SNR) and reduced cost over the prior art. One embodiment of the invention sputter-deposits a CrTi pre-seed layer and a RuAl seed layer followed by at least one underlayer and at least one magnetic layer on a circumferentially polished substrate structure to achieve an Mrt orientation ratio greater than one. Two methods according to the invention allow the Mrt orientation ratio of the disk to be adjusted or maximized by varying the thickness of the RuAl seed layer and/or altering the atomic percentage of titanium in the pre-seed layer.
    Type: Application
    Filed: January 29, 2002
    Publication date: January 9, 2003
    Inventors: Xiaoping Bian, Mary Frances Doerner, James A. Hagan, Tim Minvielle, Mohammad Taghi Mirzamaani, Adam Daniel Polcyn, Kai Tang