Abstract: The present invention is an apparatus and method for extending the life of abrasive disks used in the conditioning of polishing pads used in chemical mechanical planarization (CMP) of polishing pads used to polish and/or planarize the surfaces of semiconductor wafers during the production of integrated circuits. The invention consists of the a disk comprising a plurality of abrasive segments, each of which is fixed in tangential and radial relationship to one another about the common axis of rotation of the conditioning disk. Means are provided for movement of the abrasive segments, individually or in sets, into or out of the plane of the active abrasive surface of the conditioning disk according to the present invention.

Abstract: In order to reduce dislocation pile-ups in a virtual substrate, a buffer layer 32 is provided, between an underlying Si substrate 34 and an uppermost constant composition SiGe layer 36, which comprises alternating graded SiGe layers 38 and uniform SiGe layers 40. During the deposition of each of the graded SiGe layers 38 the Ge fraction x is linearly increased from a value corresponding to the Ge composition ratio of the preceding layer to a value corresponding to the Ge composition ratio of the following layer. Furthermore the Ge fraction x is maintained constant during deposition of each uniform SiGe layer 40, so that the Ge fraction x varies in step-wise fashion through the depth of the buffer layer. After the deposition of each pair of graded and uniform SiGe layers 38 and 40, the wafer is annealed at an elevated temperature greater than the temperature at which the layers have been deposited.

Abstract: A method of forming a lattice-tuning semiconductor substrate comprises the steps of defining parallel strips of a Si surface by the provision of spaced parallel oxide walls (2) on the surface, selectively growing a first SiGe layer on the strips such that first dislocations (3) extend preferentially across the first SiGe layer between the walls (2) to relieve the strain in the first SiGe layer in directions transverse to the walls (2), and growing a second SiGe layer on top of the first SiGe layer to overgrow the walls (2) such that second dislocations form preferentially within the second SiGe layer above the walls (2) to relieve the strain in the second SiGe layer in directions transverse to the first dislocations (3). The dislocations so produced serve to relax the material in two mutually transverse directions whilst being spatially separated so that the two sets of dislocations cannot interact with one another.

Abstract: Techniques are disclosed for hot-swapping devices in a computer system while maintaining the system integrity. One embodiment of the techniques uses an interface bridge between the system and a device complying with the Integrated Drive Electronic (IDE) standard. The bridge uses the IDE protocol to communicate with the device and uses the Small Computer System Interface (SCSI) protocol to communicate with the system. Consequently, with respect to the system, the bridge is treated as a SCSI device. In accordance with the techniques disclosed herein, hot swapping the device occurs on one side of the bridge, and the system on the other side of the bridge is well informed of such hot swapping in order to respond accordingly. As a result, the bus on the system side, is shielded from hot swapping disruption, thereby maintaining the system integrity.

Abstract: Provided are a method, system, and program for performing error correction in a storage device having a magnetic storage medium. A plurality of zones are defined in the magnetic storage medium, wherein each zone comprises a plurality of addressable locations in the magnetic storage medium. A determination is made as to whether a change of a signal-to-noise ratio for one subject zone of the plurality of zones exceeds a threshold. An operation is performed to improve the signal-to-noise ratio with respect to the subject zone of the magnetic storage medium after determining that the change of the signal-to-noise ratio exceeds the threshold.

Abstract: A thin film magnetic media structure with a pre-seed layer of CrTi is disclosed. The CrTi pre-seed layer presents an amorphous or nanocrystalline structure. The preferred seed layer is RuAl for use with the CrTi pre-seed layer. The use of the CrTi/RuAl bilayer structure provides superior adhesion to the substrate and resistance to scratching, as well as, excellent coercivity and signal-to-noise ratio (SNR) and reduced cost over the prior art. One embodiment of the invention sputter-deposits a CrTi pre-seed layer and a RuAl seed layer followed by at least one underlayer and at least one magnetic layer on a circumferentially polished substrate structure to achieve an Mrt orientation ratio greater than one. Two methods according to the invention allow the Mrt orientation ratio of the disk to be adjusted or maximized by varying the thickness of the RuAl seed layer and/or altering the atomic percentage of titanium in the pre-seed layer.

Abstract: Techniques are disclosed for hot-swapping devices in a computer system while maintaining the system integrity. One embodiment of the techniques uses an interface bridge between the system and a device complying with the Integrated Drive Electronic (IDE) standard. The bridge uses the IDE protocol to communicate with the device and uses the Small Computer System Interface (SCSI) protocol to communicate with the system. Consequently, with respect to the system, the bridge is treated as a SCSI device. In accordance with the techniques disclosed herein, hot swapping the device occurs on one side of the bridge, and the system on the other side of the bridge is well informed of such hot swapping in order to respond accordingly. As a result, the bus on the system side, is shielded from hot swapping disruption, thereby maintaining the system integrity.

Abstract: Provided are a method, system, and program for performing error correction in a storage device having a magnetic storage medium. A plurality of zones are defined in the magnetic storage medium, wherein each zone comprises a plurality of addressable locations in the magnetic storage medium. A determination is made as to whether a change of a signal-to-noise ratio for one subject zone of the plurality of zones exceeds a threshold. An operation is performed to improve the signal-to-noise ratio with respect to the subject zone of the magnetic storage medium after determining that the change of the signal-to-noise ratio exceeds the threshold.

Abstract: Techniques are disclosed for hot-swapping devices in a computer system while maintaining the system integrity. One embodiment of the techniques uses an interface bridge between the system and a device complying with the Integrated Drive Electronic (IDE) standard. The bridge uses the IDE protocol to communicate with the device and uses the Small Computer System Interface (SCSI) protocol to communicate with the system. Consequently, with respect to the system, the bridge is treated as a SCSI device. In accordance with the techniques disclosed herein, hot swapping the device occurs on one side of the bridge, and the system on the other side of the bridge is well informed of such hot swapping in order to respond accordingly. As a result, the bus on the system side, is shielded from hot swapping disruption, thereby maintaining the system integrity.

Abstract: A thin film magnetic media structure with a pre-seed layer of CrTi is disclosed. The CrTi pre-seed layer presents an amorphous or nanocrystalline structure. The preferred seed layer is RuAl for use with the CrTi pre-seed layer. The use of the CrTi/RuAl bilayer structure provides superior adhesion to the substrate and resistance to scratching, as well as, excellent coercivity and signal-to-noise ratio (SNR) and reduced cost over the prior art. One embodiment of the invention sputter-deposits a CrTi pre-seed layer and a RuAl seed layer followed by at least one underlayer and at least one magnetic layer on a circumferentially polished substrate structure to achieve an Mrt orientation ratio greater than one. Two methods according to the invention allow the Mrt orientation ratio of the disk to be adjusted or maximized by varying the thickness of the RuAl seed layer and/or altering the atomic percentage of titanium in the pre-seed layer.

Abstract: A camera support for allowing stationary and stabilized mobile use of a video camera, comprising a base which is capable of free-standing upon a horizontal surface, a camera mount, and a vertical support extending between the base and camera mount. A gimbal bearing assembly is located on the vertical support, having an outer sleeve which is biaxially movable with respect to the vertical support, so that the entire camera support can be supported by the user holding the outer sleeve, allowing the user to move while the vertical support remains stabilized in an upright position. The base has a tripartite construction which is adjustable to balance the camera weight and has retractable legs to which dolly wheels may be removably mounted for an additional mode of mobile operation.