Patents by Inventor Adam Densmore
Adam Densmore has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20230184587Abstract: A method for detecting and identifying a remote gas, the method comprising the steps of: receiving a light wave associated with the remote gas; coupling the light wave into a single mode fibre; transmitting the light wave via the single mode fibre into a filter comprising a fibre-based tunable cavity; modulating the cavity length of the filter transmission window to cause a detected modulated signal that is proportional to the spectral feature; and processing the signal using a lock-in amplifier capable of low-pass filtering and out-of-frequency noise rejection.Type: ApplicationFiled: May 19, 2021Publication date: June 15, 2023Inventors: Ross CHERITON, Siegfried JANZ, Adam DENSMORE
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Patent number: 11658462Abstract: An integrated optical sensor enables the detection and identification of one or more remote gases using a transmission filter that matches specific absorption features of a remote gas and is detected using a single photodetection element. The sensor comprises an integrated optical component that is characterized by its transmission spectrum which corresponds to absorption or emission features of a target gas over a defined spectral bandpass, and the ability to have a reversibly tunable transmission spectrum. The change in the optical power output from the sensor as the transmission spectrum is tuned is proportional to the optical depth of the target gas absorption lines when viewed with a background light source. The optical power output from the integrated optical component is therefore related to the absorption spectrum of the input light Physical properties of the sensor are tailored to produce a quasi-periodic transmission spectrum that results in a stronger signal contrast for a specific gas.Type: GrantFiled: May 20, 2020Date of Patent: May 23, 2023Assignee: National Research Council of CanadaInventors: Ross Cheriton, Siegfried Janz, Adam Densmore
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Publication number: 20210367403Abstract: An integrated optical sensor enables the detection and identification of one or more remote gases using a transmission filter that matches specific absorption features of a remote gas and is detected using a single photodetection element. The sensor comprises an integrated optical component that is characterized by its transmission spectrum which corresponds to absorption or emission features of a target gas over a defined spectral bandpass, and the ability to have a reversibly tunable transmission spectrum. The change in the optical power output from the sensor as the transmission spectrum is tuned is proportional to the optical depth of the target gas absorption lines when viewed with a background light source. The optical power output from the integrated optical component is therefore related to the absorption spectrum of the input light Physical properties of the sensor are tailored to produce a quasi-periodic transmission spectrum that results in a stronger signal contrast for a specific gas.Type: ApplicationFiled: May 20, 2020Publication date: November 25, 2021Inventors: Ross Cheriton, Siegfried Janz, Adam Densmore
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Patent number: 10276627Abstract: A method of fabricating a solid state radiation detector method includes mechanically lapping and polishing the first and the second surfaces of a semiconductor wafer using a plurality of lapping and polishing steps. The method also includes growing passivation oxide layers by use of oxygen plasma on the top of the polished first and second surfaces in order to passivate the semiconductor wafer. Anode contacts are deposited and patterned on top of the first passivation oxide layer, which is on top of the first surface. Cathode contacts, which are either monolithic or patterned, are deposited on top of the second passivation oxide layer, which is on the second surface. Aluminum nitride encapsulation layer can be deposited over the anode contacts and patterned to encapsulate the first passivation oxide layer, while physically exposing a center portion of each anode contact to electrically connect the anode contacts.Type: GrantFiled: October 10, 2017Date of Patent: April 30, 2019Assignee: REDLEN TECHNOLOGIES, INC.Inventors: Uri El-Hanany, Adam Densmore, Saeid Taherion, Georgios Prekas, Veeramani Perumal
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Publication number: 20180033822Abstract: A method of fabricating a solid state radiation detector method includes mechanically lapping and polishing the first and the second surfaces of a semiconductor wafer using a plurality of lapping and polishing steps. The method also includes growing passivation oxide layers by use of oxygen plasma on the top of the polished first and second surfaces in order to passivate the semiconductor wafer. Anode contacts are deposited and patterned on top of the first passivation oxide layer, which is on top of the first surface. Cathode contacts, which are either monolithic or patterned, are deposited on top of the second passivation oxide layer, which is on the second surface. Aluminum nitride encapsulation layer can be deposited over the anode contacts and patterned to encapsulate the first passivation oxide layer, while physically exposing a center portion of each anode contact to electrically connect the anode contacts.Type: ApplicationFiled: October 10, 2017Publication date: February 1, 2018Inventors: Uri El-Hanany, Adam Densmore, Saeid Taherion, Georgios Prekas, Veeramani Perumal
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Patent number: 9847369Abstract: A method of fabricating a solid state radiation detector method includes mechanically lapping and polishing the first and the second surfaces of a semiconductor wafer using a plurality of lapping and polishing steps. The method also includes growing passivation oxide layers by use of oxygen plasma on the top of the polished first and second surfaces in order to passivate the semiconductor wafer. Anode contacts are deposited and patterned on top of the first passivation oxide layer, which is on top of the first surface. Cathode contacts, which are either monolithic or patterned, are deposited on top of the second passivation oxide layer, which is on the second surface. Aluminum nitride encapsulation layer can be deposited over the anode contacts and patterned to encapsulate the first passivation oxide layer, while physically exposing a center portion of each anode contact to electrically connect the anode contacts.Type: GrantFiled: February 3, 2016Date of Patent: December 19, 2017Assignee: REDLEN TECHNOLOGIES, INC.Inventors: Uri El-Hanany, Adam Densmore, Saeid Taherion, Georgios Prekas, Veeramani Perumal
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Publication number: 20160240584Abstract: A method of fabricating a solid state radiation detector method includes mechanically lapping and polishing the first and the second surfaces of a semiconductor wafer using a plurality of lapping and polishing steps. The method also includes growing passivation oxide layers by use of oxygen plasma on the top of the polished first and second surfaces in order to passivate the semiconductor wafer. Anode contacts are deposited and patterned on top of the first passivation oxide layer, which is on top of the first surface. Cathode contacts, which are either monolithic or patterned, are deposited on top of the second passivation oxide layer, which is on the second surface. Aluminum nitride encapsulation layer can be deposited over the anode contacts and patterned to encapsulate the first passivation oxide layer, while physically exposing a center portion of each anode contact to electrically connect the anode contacts.Type: ApplicationFiled: February 3, 2016Publication date: August 18, 2016Inventors: Uri EL-HANANY, Adam DENSMORE, Saeid TAHERION, Georgios PREKAS, Veeramani PERUMAL
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Patent number: 8796012Abstract: A technique for high sensitivity evanescent field molecular sensing employs a detection scheme that simultaneously couples a polarized beam to a single mode of a waveguide, and couples the polarized beam out of the waveguide to specularly reflect the beam by the same grating. Strong interaction with the single (preferably TM) mode is provided by using a silicon on insulator (SOI) wafer having a waveguide thickness chosen between 10-400 nm so that the majority of the mode field strength spans the evanescent field. Well known, robust techniques for producing a grating on the waveguide are provided. Interrogation from a backside of the SOI wafer is taught.Type: GrantFiled: December 2, 2009Date of Patent: August 5, 2014Assignee: National Research Council of CanadaInventors: Bill Sinclair, Jens Schmid, Philip Waldron, Dan-Xia Xu, Adam Densmore, Trevor Mischki, Greg Lopinski, Jean Lapointe, Daniel Poitras, Siegfried Janz
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Patent number: 8503839Abstract: A waveguide cores consisting of a subwavelength grating permits transmission of light without diffraction in a discontinuous manner, wherein the energy is provided by field hopping between subwavelength material segments of higher index. The use of alternating segments permits design of waveguides having desired effective index, mode confinement factor, birefringence, polarization mode or mode dispersions, polarization dependent loss, thermal sensitivity, or nonlinear optical coefficient. An optical system comprises a waveguide having such a core, clad on at least one side, extending between two ends, and wavelength-limiting optical components in optical communication with the ends.Type: GrantFiled: January 13, 2012Date of Patent: August 6, 2013Assignee: National Research Council of CanadaInventors: Pavel Cheben, Przemek J. Bock, Jens H. Schmid, Dan-Xia Xu, Adam Densmore, Siegfried Janz
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Publication number: 20120183250Abstract: A waveguide cores consisting of a subwavelength grating permits transmission of light without diffraction in a discontinuous manner, wherein the energy is provided by field hopping between subwavelength material segments of higher index. The use of alternating segments permits design of waveguides having desired effective index, mode confinement factor, birefringence, polarization mode or mode dispersions, polarization dependent loss, thermal sensitivity, or nonlinear optical coefficient. An optical system comprises a waveguide having such a core, clad on at least one side, extending between two ends, and wavelength-limiting optical components in optical communication with the ends.Type: ApplicationFiled: January 13, 2012Publication date: July 19, 2012Inventors: Pavel CHEBEN, Przemek J. BOCK, Jens H. SCHMID, Dan-Xia XU, Adam DENSMORE, Siegfried JANZ
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Publication number: 20110223688Abstract: A technique for high sensitivity evanescent field molecular sensing employs a detection scheme that simultaneously couples a polarized beam to a single mode of a waveguide, and couples the polarized beam out of the waveguide to specularly reflect the beam by the same grating. Strong interaction with the single (preferably TM) mode is provided by using a silicon on insulator (SOI) wafer having a waveguide thickness chosen between 10-400 nm so that the majority of the mode field strength spans the evanescent field. Well known, robust techniques for producing a grating on the waveguide are provided. Interrogation from a backside of the SOI wafer is taught.Type: ApplicationFiled: December 2, 2009Publication date: September 15, 2011Inventors: Bill Sinclair, Jens Schmid, Philip Waldron, Dan-Xia Xu, Adam Densmore, Trevor Mischki, Greg Lopointe, Jean Lapointe, Daniel Poitras, Siegfried Janz
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Publication number: 20100290037Abstract: Methods and devices related to a sensor element for use in the detection and monitoring of molecular interactions. The sensor element uses a silicon-on-insulator wafer optically coupled to a silicon prism. The wafer has a thin silicon film top layer, a silicon substrate layer, and a buried silicon dioxide layer sandwiched between the silicon film and substrate layers. The wafer is coupled to the prism on the wafer's substrate side while the interactions to be monitored are placed on the wafer's silicon film side. An incident beam is directed at the prism and the incident angle is adjusted until the beam optically couples to the silicon film's optical waveguide mode. When this occurs, a decrease in the intensity of the reflected beam can be detected. The molecular interactions affect the phase velocity or wave vector of the propagating mode. Similarly, instead of measuring the incident angle at which optical coupling occurs, the phase of the reflected beam may be measured.Type: ApplicationFiled: August 15, 2007Publication date: November 18, 2010Applicant: NATIONAL RESEARCH COUNCIL OF CANADAInventors: Dan-xia Xu, Adam Densmore, Andre Delage, Pavel Cheben, Siegfried Janz
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Patent number: 7778499Abstract: Methods and devices relating to a sensor for use in detecting and monitoring molecular interactions. A silicon waveguide sensing element is provided along with a layer of silicon. A silicon oxide layer is also provided between the waveguide element and the layer of silicon. The sensing element is adjacent to an aqueous solution in which the molecular interactions are occurring. A light beam travelling in the silicon waveguide creates an evanescent optical field on the surface of the sensing element adjacent to the boundary between the sensing element and the aqueous medium. Molecular interactions occurring on this surface affect the intensity or the phase of the light beam travelling through the waveguide by changing the effective refractive index of the medium. By measuring the effect on the intensity, phase, or speed of the light beam, the molecular interactions can be detected and monitored in real time.Type: GrantFiled: September 13, 2007Date of Patent: August 17, 2010Assignee: National Research Council of CanadaInventors: Siegfried Janz, Pavel Cheben, Andre Delage, Adam Densmore, Dan-Xia Xu
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Publication number: 20100165351Abstract: Methods and devices relating to sensors and sensor blocks for use in detecting and monitoring molecular interactions. A silicon waveguide sensing element is provided along with a layer of silicon. A silicon oxide layer is also provided between the waveguide element and the layer of silicon. The sensing element is adjacent to an aqueous solution in which the molecular interactions are occurring. A light beam travelling in the silicon waveguide creates an evanescent optical field on the surface of the sensing element adjacent to the boundary between the sensing element and the aqueous medium. Molecular interactions occurring on this surface affect the intensity or the phase of the light beam travelling through the waveguide by changing the effective refractive index of the medium. By measuring the effect on the intensity, phase, or speed of the light beam, the molecular interactions can be detected and monitored in real time. Various configurations using this sensor technology is also disclosed.Type: ApplicationFiled: April 9, 2008Publication date: July 1, 2010Inventors: Dan-Xia Xu, Adam Densmore, Andre Delage, Pavel Cheben, Siegfried Janz
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Patent number: 7680371Abstract: An interface device for performing mode transformation in optical waveguides includes an optical waveguide core for propagating light of a particular wavelength or a plurality of wavelengths. The optical waveguide core terminates in a subwavelength grating configured to change the propagation mode of the light. The subwavelength grating has a pitch sufficiently less than the wavelength of the light to frustrate diffraction. The device can thus serve as an optical coupler between different propagating media, or as an anti-reflective or high reflectivity device.Type: GrantFiled: October 18, 2007Date of Patent: March 16, 2010Assignee: National Research Council of CanadaInventors: Pavel Cheben, Siegfried Janz, Dan-Xia Xu, Jens Schmid, Adam Densmore, Jean Lapointe
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Publication number: 20080292236Abstract: Methods and devices relating to a sensor for use in detecting and monitoring molecular interactions. A silicon waveguide sensing element is provided along with a layer of silicon. A silicon oxide layer is also provided between the waveguide element and the layer of silicon. The sensing element is adjacent to an aqueous solution in which the molecular interactions are occurring. A light beam travelling in the silicon waveguide creates an evanescent optical field on the surface of the sensing element adjacent to the boundary between the sensing element and the aqueous medium. Molecular interactions occurring on this surface affect the intensity or the phase of the light beam travelling through the waveguide by changing the effective refractive index of the medium. By measuring the effect on the intensity, phase, or speed of the light beam, the molecular interactions can be detected and monitored in real time.Type: ApplicationFiled: September 13, 2007Publication date: November 27, 2008Inventors: Siegfried Janz, Pavel Cheben, Andre Delage, Adam Densmore
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Publication number: 20080193080Abstract: An interface device for performing mode transformation in optical waveguides includes an optical waveguide core for propagating light of a particular wavelength or a plurality of wavelengths. The optical waveguide core terminates in a subwavelength grating configured to change the propagation mode of the light. The subwavelength grating has a pitch sufficiently less than the wavelength of the light to frustrate diffraction. The device can thus serve as an optical coupler between different propagating media, or as an anti-reflective or high reflectivity device.Type: ApplicationFiled: October 18, 2007Publication date: August 14, 2008Applicant: NATIONAL RESEARCH COUNCIL OF CANADAInventors: Pavel Cheben, Siegfried Janz, Dan-Xia Xu, Jens Schmid, Adam Densmore, Jean Lapointe
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Publication number: 20080193079Abstract: An interface device for performing mode transformation in optical waveguides includes an optical waveguide core for propagating light of a particular wavelength. The optical waveguide core terminates in a subwavelength grating configured to change the propagation mode of the light. The subwavelength grating has a pitch sufficiently less than the wavelength of the light to frustrate diffraction. The device can thus serve as an optical coupler between different propagating media, or as an anti-reflective or high reflectivity device.Type: ApplicationFiled: February 13, 2007Publication date: August 14, 2008Applicant: NATIONAL RESEARCH COUNCIL OF CANADAInventors: Pavel Cheben, Siegfried Janz, Dan-Xia Xu, Jens Schmid, Adam Densmore, Jean Lapointe