Abstract: A gas cooled LED lamp and submount is disclosed. The centralized nature of the LEDs allows the LEDs to be configured near the central portion of the optical envelope of the lamp. In example embodiments, the LEDs can be cooled and/or cushioned by a gas in thermal communication with the LED array to enable the LEDs to maintain an appropriate operating temperature for efficient operation and long life. In some embodiments, the LED assembly is mounted on a glass stem. In some embodiments a thermal resistant path is created that prevents overtemperature of the LED array during the making of the lamp. In some embodiments the LED assembly comprises a lead frame and/or metal core board that is bent into a three-dimensional shape to create a desired light pattern in the enclosure or an extruded submount formed into a three-dimensional shape.

Abstract: In one embodiment, a lamp comprises an optically transmissive enclosure. An LED array is disposed in the optically transmissive enclosure operable to emit light when energized through an electrical connection. A gas is contained in the enclosure to provide thermal coupling to the LED array. A board supports lamp electronics for the lamp and is located in the enclosure. The LED array is mounted to the board and LEDs are mounted on a submount formed to have a three dimensional shape. The board is electrically coupled to the LED array and the submount may be thermally coupled to the gas for dissipating heat from the plurality of LEDs.

Abstract: A lamp has an optically transmissive enclosure and a base defining a longitudinal axis of the lamp that extends from the base to the free end of the enclosure. An LED assembly is positioned in the optically transmissive enclosure. The LED assembly includes LEDs operable to emit light when energized through an electrical path from the base. The LED assembly is arranged such that the plurality of LEDs face perpendicularly to the longitudinal axis of the lamp. The emission profile of the LEDs being at least 120 degrees FWHM.

Abstract: A lamp having an enclosure with a reflector and a lens where the reflector is made of thermally conductive material. A base is coupled to the enclosure. An LED is located in the enclosure and emits light when energized through an electrical path from the base. A heat sink having a heat dissipating portion that may be at least partially exposed to the ambient environment and heat conducting portion that is thermally coupled to the LED. The reflector is thermally coupled to the heat sink and is exposed to the exterior of the lamp such that heat from the heat sink may be dissipated to the ambient environment at least partially through the reflector.

Abstract: An electronic device may include a packaging substrate having a packaging face and first and second pluralities of light emitting diodes electrically and mechanically coupled to the packaging face of the packaging substrate. The packaging substrate may include first and second electrically conductive pads on the packaging face. The light emitting diodes of the first plurality of light emitting diodes may be electrically coupled in parallel between the first electrically conductive pad and an interconnection structure on the packaging face. The light emitting diodes of the second plurality of light emitting diodes may be electrically coupled in parallel between the interconnection structure and the second electrically conductive pad.

Abstract: A semiconductor light emitting apparatus includes an elongated hollow wavelength conversion tube that comprises an elongated wavelength conversion tube wall having wavelength conversion material such as phosphor dispersed therein uniformly or non-uniformly. The tube need not be cylindrical. A semiconductor light emitting device is oriented to emit light inside the elongated hollow wavelength conversion tube to impinge upon the elongated wavelength conversion tube wall and the wavelength conversion material dispersed therein.

Abstract: A semiconductor light emitting apparatus includes an elongated hollow wavelength conversion tube that includes an elongated wavelength conversion tube wall having wavelength conversion material, such as phosphor, dispersed therein. A semiconductor light emitting device is oriented to emit light inside the elongated hollow wavelength conversion tube to impinge upon the elongated wavelength conversion tube wall and the wavelength conversion material dispersed therein. The elongated hollow wavelength conversion tube may have an open end, a crimped end, a reflective end, and/or other configurations. Multiples tubes and/or multiple semiconductor light emitting devices may also be used in various configurations. Related assembling methods are also described.

Abstract: A lamp comprises an optically transmissive enclosure. A plurality of LEDs for emitting light are located to emit light toward the enclosure. The enclosure has at least one reflective area disposed on the enclosure to reflect a portion of the light into the enclosure to create a desired luminous intensity distribution.

Abstract: A high efficiency Group III nitride light emitting diode is disclosed. The diode includes a Group III nitride-based light emitting region including a plurality of Group III nitride-based layers. A lenticular surface directly contacts one of the Group III nitride-based layers of the light emitting region. The lenticular surface includes a transparent material that is different from the Group III nitride-based layer of the light emitting region that the lenticular surface directly contacts.

Abstract: A method is disclosed for treating a silicon carbide substrate for improved epitaxial deposition thereon and for use as a precursor in the manufacture of devices such as light emitting diodes. The method includes the steps of implanting dopant atoms of a first conductivity type into the first surface of a conductive silicon carbide wafer having the same conductivity type as the implanting ions at one or more predetermined dopant concentrations and implant energies to form a dopant profile, annealing the implanted wafer, and growing an epitaxial layer on the implanted first surface of the wafer.

Abstract: In one embodiment, a lamp comprises an optically transmissive enclosure. An LED array is disposed in the optically transmissive enclosure operable to emit light when energized through an electrical connection. A gas is contained in the enclosure to provide thermal coupling to the LED array. The gas may include oxygen.

Abstract: In one embodiment, a lamp comprises an optically transmissive enclosure. An LED array is disposed in the optically transmissive enclosure operable to emit light when energized through an electrical connection. A gas is contained in the enclosure to provide thermal coupling to the LED array. The gas may include oxygen.

Abstract: A high efficiency Group III nitride light emitting diode is disclosed. The diode includes a Group III nitride-based light emitting region including a plurality of Group III nitride-based layers. A lenticular surface directly contacts one of the Group III nitride-based layers of the light emitting region. The lenticular surface includes a transparent material that is different from the Group III nitride-based layer of the light emitting region that the lenticular surface directly contacts.

Abstract: In one embodiment, a lamp comprises an optically transmissive enclosure. An LED array is disposed in the optically transmissive enclosure operable to emit light when energized through an electrical connection. A gas is contained in the enclosure to provide thermal coupling to the LED array. The gas may include oxygen.

Abstract: A lamp comprises an optically transmissive enclosure. A plurality of LEDs for emitting light are located to emit light toward the enclosure. The enclosure has at least one reflective area disposed on the enclosure to reflect a portion of the light into the enclosure to create a desired luminous intensity distribution.

Abstract: A high efficiency Group III nitride light emitting diode is disclosed. The diode includes a substrate selected from the group consisting of semiconducting and conducting materials, a Group III nitride-based light emitting region on or above the substrate, and, a lenticular surface containing silicon carbide on or above the light emitting region, and extending to said light emitting region.

Abstract: A lamp comprises an enclosure comprising a reflector and a lens where the reflector is made of thermally conductive material. A base is coupled to the enclosure. An LED is located in the enclosure and emits light when energized through an electrical path from the base. A heat sink comprises a heat dissipating portion that may be at least partially exposed to the ambient environment and a heat conducting portion that is thermally coupled to the LED. The reflector is thermally coupled to the heat sink and is exposed to the exterior of the lamp such that heat from the heat sink may be dissipated to the ambient environment at least partially through the reflector.

Abstract: A lamp has an optically transmissive enclosure and a base. A tower extends from the base into the enclosure and supports an LED assembly in the enclosure. The LED assembly comprises a plurality of LEDs operable to emit light when energized through an electrical path from the base. The tower and the LED assembly are arranged such that the plurality of LEDs are disposed about the periphery of the tower in a band and face outwardly toward the enclosure to create a source of the light that appears as a glowing filament. The tower forms part of a heat sink that transmits heat from the LED assembly to the ambient environment. The LED assembly has a three-dimensional shape. An electrical interconnect connects a conductor to the heat sink where the conductor is in the electrical path between the LED assembly and the base.

Abstract: The present invention is a semiconductor structure for light emitting devices that can emit in the red to ultraviolet portion of the electromagnetic spectrum. The semiconductor structure includes a Group III nitride active layer positioned between a first n-type Group III nitride cladding layer and a second n-type Group III nitride cladding layer, the respective bandgaps of the first and second n-type cladding layers being greater than the bandgap of the active layer. The semiconductor structure further includes a p-type Group III nitride layer, which is positioned in the semiconductor structure such that the second n-type cladding layer is between the p-type layer and the active layer.

Abstract: A vertical geometry light emitting diode is disclosed that is capable of emitting light in the red, green, blue, violet and ultraviolet portions of the electromagnetic spectrum. The light emitting diode includes a conductive silicon carbide substrate, an InGaN quantum well, a conductive buffer layer between the substrate and the quantum well, a respective undoped gallium nitride layer on each surface of the quantum well, and ohmic contacts in a vertical geometry orientation.