Abstract: A microelectromechanical system (MEMS) switch implemented with a coplanar waveguide. The MEMS switch includes an input terminal, an output terminal. The MEMS switch includes a beam extending between the input terminal and the output terminal. The beam includes a first edge and a second edge coupled to a gate of the MEMS switch. The beam includes a third edge proximate the input terminal. The first edge includes a first set of finger contacts proximate a first corner of the beam and a second set of finger contacts proximate a second corner of the beam. The beam includes a fourth edge proximate the output terminal, the fourth edge opposing the third edge. The MEMS switch has a first anchor coupled to the input terminal. The first anchor includes a first segment extending from a region proximate the input terminal to a region overlying the first set of finger contacts.

Abstract: A stackable molecular spectroscopy cell includes a hollow body, a first cap affixed to a first surface of the hollow body, covering a first opening in the hollow body, and a second cap affixed to a second surface of the hollow body, covering a second opening in the hollow body, and forming a sealed cavity within the hollow body. The sealed cavity contains a dipolar gas having a pressure of less than 0.5 mbar. The stackable molecular spectroscopy cell also includes a metal layer covering an inner surface of the hollow body and an inner surface of the first and second caps, including a first aperture in the metal layer covering the inner surface of the first cap and a second aperture in the metal layer covering the inner surface of the second cap.

Abstract: An example microelectromechanical structures (MEMS) switch includes a body having a first end and a second end opposite the first end. The body extends from a base at the first end and has a first width. The MEMS switch further includes a bridge extending laterally from the body at the second end, and a spine extending between the bridge and the base. The spine has a second width smaller than the first width. At least one of the spine or the body includes a first material with a first thermal coefficient and a second material with a second thermal coefficient different from the first thermal coefficient.

Abstract: An integrated circuit (IC) includes a semiconductor substrate having a first surface and a second surface opposite the first surface. A through wafer trench (TWT) extends from the first surface of the semiconductor substrate to the second surface of the semiconductor substrate. Dielectric material is in the TWT. An interconnect region has layers of dielectric on the first surface of the substrate. The interconnect region has a conductive transmit patch. An antenna is formed, at least in part, by the dielectric material in the TWT and the transmit patch in the interconnect region. The antenna is configured to transmit or receive electromagnetic radiation between the transmit patch and the second surface of the semiconductor substrate through the dielectric material within the trench.

Abstract: A clock generator includes a hermetically sealed cavity and clock generation circuitry. A dipolar molecule in the hermetically sealed cavity has a quantum rotational state transition at a fixed frequency. The clock generation circuitry generates an output clock signal based on the fixed frequency of the dipolar molecule. The clock generation circuitry includes a detection circuit, a reference oscillator, and control circuitry. The detection circuit generates a first detection signal and a second detection signal representative of amplitude of signal at an output of the hermetically sealed cavity responsive to a first sweep signal and a second sweep signal input to the hermetically sealed cavity. The control circuitry sets a frequency of the reference oscillator based on a difference in time of identification of the fixed frequency of the dipolar molecule in the first detection signal and the second detection signal.

Abstract: A clock generator includes a hermetically sealed cavity and clock generation circuitry. A dipolar molecule in the hermetically sealed cavity has a quantum rotational state transition at a fixed frequency. The clock generation circuitry generates an output clock signal based on the fixed frequency of the dipolar molecule. The clock generation circuitry includes a detection circuit, a reference oscillator, and control circuitry. The detection circuit generates a first detection signal and a second detection signal representative of amplitude of signal at an output of the hermetically sealed cavity responsive to a first sweep signal and a second sweep signal input to the hermetically sealed cavity. The control circuitry sets a frequency of the reference oscillator based on a difference in time of identification of the fixed frequency of the dipolar molecule in the first detection signal and the second detection signal.

Abstract: A MEMs actuator device and method of forming includes arrays of actuator elements. Each actuator element has a moveable top plate and a bottom plate. The top plate includes a central membrane member and a cantilever spring for movement of the central membrane member. The bottom plate consists of two RF signal lines extending under the central membrane member. A MEMs electrostatic actuator device includes a CMOS wafer, a MEMs wafer, and a ball bond assembly. Interconnections are made from a ball bond to an associated through-silicon-via (TSV) that extends through the MEMS wafer. A RF signal path includes a ball bond electrically connected through a TSV and to a horizontal feed bar and from the first horizontal feed bar vertically into each column of the array. A metal bond ring extends between the CMOS wafer and the MEMS wafer. An RF grounding loop is completed from a ground shield overlying the array to the metal bond ring, a TSV and to a ball bond.

Abstract: A MEMs actuator device and method of forming includes arrays of actuator elements. Each actuator element has a moveable top plate and a bottom plate. The top plate includes a central membrane member and a cantilever spring for movement of the central membrane member. The bottom plate consists of two RF signal lines extending under the central membrane member. A MEMs electrostatic actuator device includes a CMOS wafer, a MEMs wafer, and a ball bond assembly. Interconnections are made from a ball bond to an associated through-silicon-via (TSV) that extends through the MEMS wafer. A RF signal path includes a ball bond electrically connected through a TSV and to a horizontal feed bar and from the first horizontal feed bar vertically into each column of the array. A metal bond ring extends between the CMOS wafer and the MEMS wafer. An RF grounding loop is completed from a ground shield overlying the array to the metal bond ring, a TSV and to a ball bond.

Abstract: A MEMs actuator device and method of forming includes arrays of actuator elements. Each actuator element has a moveable top plate and a bottom plate. The top plate includes a central membrane member and a cantilever spring for movement of the central membrane member. The bottom plate consists of two RF signal lines extending under the central membrane member. A MEMs electrostatic actuator device includes a CMOS wafer, a MEMs wafer, and a ball bond assembly. Interconnections are made from a ball bond to an associated through-silicon-via (TSV) that extends through the MEMS wafer. A RF signal path includes a ball bond electrically connected through a TSV and to a horizontal feed bar and from the first horizontal feed bar vertically into each column of the array. A metal bond ring extends between the CMOS wafer and the MEMS wafer. An RF grounding loop is completed from a ground shield overlying the array to the metal bond ring, a TSV and to a ball bond.

Abstract: A MEMs actuator device and method of forming includes arrays of actuator elements. Each actuator element has a moveable top plate and a bottom plate. The top plate includes a central membrane member and a cantilever spring for movement of the central membrane member. The bottom plate consists of two RF signal lines extending under the central membrane member. A MEMs electrostatic actuator device includes a CMOS wafer, a MEMs wafer, and a ball bond assembly. Interconnections are made from a ball bond to an associated through-silicon-via (TSV) that extends through the MEMS wafer. A RF signal path includes a ball bond electrically connected through a TSV and to a horizontal feed bar and from the first horizontal feed bar vertically into each column of the array. A metal bond ring extends between the CMOS wafer and the MEMS wafer. An RF grounding loop is completed from a ground shield overlying the array to the metal bond ring, a TSV and to a ball bond.

Abstract: A tunable cavity resonator includes a substrate, a cap structure, and a tuning assembly. The cap structure extends from the substrate, and at least one of the substrate and the cap structure defines a resonator cavity. The tuning assembly is positioned at least partially within the resonator cavity. The tuning assembly includes a plurality of fixed-fixed MEMS beams configured for controllable movement relative to the substrate between an activated position and a deactivated position in order to tune a resonant frequency of the tunable cavity resonator.

Abstract: A tunable cavity resonator includes a substrate, a cap structure, and a tuning assembly. The cap structure extends from the substrate, and at least one of the substrate and the cap structure defines a resonator cavity. The tuning assembly is positioned at least partially within the resonator cavity. The tuning assembly includes a plurality of fixed-fixed MEMS beams configured for controllable movement relative to the substrate between an activated position and a deactivated position in order to tune a resonant frequency of the tunable cavity resonator.

Abstract: A radio frequency (RF) micro-electro-mechanical systems (MEMS) switch and high yield manufacturing method. The switch can be fabricated with very high yield despite the high variability of the manufacturing process parameters. The switch is fabricated with monocrystalline material, e.g., silicon, as the moving portion. The switch fabrication process is compatible with CMOS electronics fabricated on Silicon-on-Insulator (SOI) substrates. The switch comprises a movable portion having conductive portion selectively positioned with a bias voltage to conductively bridge a gap in a signal line.

Abstract: A radio frequency (RF) micro-electro-mechanical systems (MEMS) switch and high yield manufacturing method. The switch can be fabricated with very high yield despite the high variability of the manufacturing process parameters. The switch is fabricated with monocrystalline material, e.g., silicon, as the moving portion. The switch fabrication process is compatible with CMOS electronics fabricated on Silicon-on-Insulator (SOI) substrates. The switch comprises a movable portion having conductive portion selectively positioned with a bias voltage to conductively bridge a gap in a signal line.