Abstract: The present invention provides a voltage driven array having an array of discrete elements arranged in at least one row and plurality of columns. A resistive element has a first end and a second end provided with a first voltage and a second voltage respectively. The first voltage is different from the second voltage. Positions along the resistive element connect to each of the rows or columns such that each of the different positions along the resistive element supplies a different voltage to the respective row or column than a remainder of the positions.

Abstract: A method of generating 2m gray scale levels for a number of rows of pixels to be displayed during a video frame, where m is an integer greater than or equal to zero. The method includes dividing the frame into 2m-1 time slices, updating each of the rows of pixels during m time slices, and distributing the row updates among the time slices such that a substantially equal number of the rows of pixels are updated during each of the time slices.

Abstract: A projection screen for use in a projection system is described. In an embodiment of the present invention, a projection system includes a projector and a projection screen. The projector is configured to project an image composed of visible light in one or more ranges of wavelengths. The projection screen has a plurality of sub-pixels that reflect and/or transmit the one or more ranges of wavelengths to display the image and absorb visible wavelengths of light in at least one other range not included in the one or more ranges. One or more spaces are defined between adjacent sub-pixels that reflect and/or transmit the one or more ranges and the at least one other range.

Abstract: A nanoscopic transistor is made by forming an oxide layer on a semiconductor substrate, applying resist, patterning the resist using imprint lithography to form a pattern aligned along a first direction, applying a first ion-masking material over the pattern, selectively lifting it off to leave a first ion mask to form a gate, forming doped regions by implanting a suitable dopant, applying another layer of resist and patterning the second resist layer using imprint lithography to form a second pattern aligned along a second direction, applying a second ion-masking material over the second pattern, selectively lifting it off to leave a second ion mask defined by the second pattern, and forming second doped regions in the substrate by implanting a suitable second dopant selectively in accordance with the second ion mask. The method may be used to make an array of nanoscopic transistors.

Abstract: Methods and apparatus for determining the extent of etching in material by locating a detector element adjacent to a portion of the material that is to be etched. The width of the element varies. The resistance of the element is measured upon etching the portion.

Abstract: A power rising electronic device receives an input current and supplies an output current that is a function of a power of the input current having a relative whole-number exponent. The power rising electronic device includes a plurality of diodes equal to an absolute value of the relative whole-number exponent. The plurality of diodes are connected in series with one another to produce from the input current an input voltage that is a logarithmic function of a power of the input current. The electronic device further includes an output junction element, and a circuit for applying a voltage that is a function of the input voltage to the output junction element for producing a current that is an exponential function of the voltage applied thereto. The output current of the power rising electronic device is derived from the current produced in the output junction element.