Patents by Inventor Adam I. Amali

Adam I. Amali has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Power semiconductor device with interconnected gate trenches
    Patent number: 7943990
    Abstract: A power semiconductor device which includes a plurality of gate trenches and a perimeter trench intersecting the gate trenches.
    Type: Grant
    Filed: August 14, 2006
    Date of Patent: May 17, 2011
    Assignee: International Rectifier Corporation
    Inventors: Ling Ma, Adam I. Amali, Russell Turner
  • Early contact, high cell density process
    Patent number: 7566622
    Abstract: A method of fabricating a power semiconductor device in which contact trenches are formed prior to forming the gate trenches.
    Type: Grant
    Filed: June 5, 2006
    Date of Patent: July 28, 2009
    Assignee: International Rectifier Corporation
    Inventor: Adam I Amali
  • Trench fet with self aligned source and contact
    Patent number: 7397083
    Abstract: A trench type power MOSgated device has a plurality of spaced trenches lined with oxide and filled with conductive polysilicon. The tops of the polysilicon fillers are below the top silicon surface and are capped with a deposited oxide the top of which is flush with the top of the silicon. Source regions of short lateral extent extend into the trench walls to a depth below the top of the polysilicon. A trench termination is formed having an insulation oxide liner covered by a polysilicon layer, covered in turn by a deposited oxide.
    Type: Grant
    Filed: November 5, 2007
    Date of Patent: July 8, 2008
    Assignee: International Rectifier Corporation
    Inventors: Adam I Amali, Naresh Thapar
  • Trench FET with self aligned source and contact
    Patent number: 7301200
    Abstract: A trench type power MOSgated device has a plurality of spaced trenches lined with oxide and filled with conductive polysilicon. The tops of the polysilicon fillers are below the top silicon surface and are capped with a deposited oxide the top of which is flush with the top of the silicon. Source regions of short lateral extent extend into the trench walls to a depth below the top of the polysilicon. A trench termination is formed having an insulation oxide liner covered by a polysilicon layer, covered in turn by a deposited oxide.
    Type: Grant
    Filed: March 15, 2006
    Date of Patent: November 27, 2007
    Assignee: International Rectifier Corporation
    Inventors: Adam I Amali, Naresh Thapar
  • Trench fet with self aligned source and contact
    Patent number: 7045859
    Abstract: A trench type power MOSgated device has a plurality of spaced trenches lined with oxide and filled with conductive polysilicon. The tops of the polysilicon fillers are below the top silicon surface and are capped with a deposited oxide the top of which is flush with the top of the silicon. Source regions of short lateral extent extend into the trench walls to a depth below the top of the polysilicon. A trench termination is formed having an insulation oxide liner covered by a polysilicon layer, covered in turn by a deposited oxide.
    Type: Grant
    Filed: August 30, 2002
    Date of Patent: May 16, 2006
    Assignee: International Rectifier Corporation
    Inventors: Adam I. Amali, Naresh Thapar
  • Power mosfet with integrated drivers in a common package
    Patent number: 6593622
    Abstract: A driver stage consisting of an N channel FET and a P channel FET are mounted in the same package as the main power FET. The power FET is mounted on a lead frame and the driver FETs are mounted variously on a separate pad of the lead frame or on the main FET or on the lead frame terminals. All electrodes are interconnected within the package by mounting on common conductive surfaces or by wire bonding. The drivers are connected to define either an inverting or non-inverting drive.
    Type: Grant
    Filed: May 2, 2002
    Date of Patent: July 15, 2003
    Assignee: International Rectifier Corporation
    Inventors: Daniel M. Kinzer, Tim Sammon, Mark Pavier, Adam I. Amali
  • Trench fet with self aligned source and contact
    Publication number: 20030085422
    Abstract: A trench type power MOSgated device has a plurality of spaced trenches lined with oxide and filled with conductive polysilicon. The tops of the polysilicon fillers are below the top silicon surface and are capped with a deposited oxide the top of which is flush with the top of the silicon. Source regions of short lateral extent extend into the trench walls to a depth below the top of the polysilicon. A trench termination is formed having an insulation oxide liner covered by a polysilicon layer, covered in turn by a deposited oxide.
    Type: Application
    Filed: August 30, 2002
    Publication date: May 8, 2003
    Applicant: International Rectifier Corp.
    Inventors: Adam I. Amali, Naresh Thapar
  • Power mosfet with integrated drivers in a common package
    Publication number: 20020163040
    Abstract: A driver stage consisting of an N channel FET and a P channel FET are mounted in the same package as the main power FET. The power FET is mounted on a lead frame and the driver FETs are mounted variously on a separate pad of the lead frame or on the main FET or on the lead frame terminals. All electrodes are interconnected within the package by mounting on common conductive surfaces or by wire bonding. The drivers are connected to define either an inverting or non-inverting drive.
    Type: Application
    Filed: May 2, 2002
    Publication date: November 7, 2002
    Applicant: International Rectifier Corp.
    Inventors: Daniel M. Kinzer, Tim Sammon, Mark Pavier, Adam I. Amali