Abstract: A method of applying a dielectric coating on a structure array of a component of an electrical device includes applying a first layer of a first dielectric material on a structure array with an atomic layer deposition (ALD) process or a spin-on cladding process. The structure array has a plurality of features. The method may include applying a second layer of a second dielectric material on the first layer with an evaporation deposition process, a physical vapor deposition process (PVD), or a flux-controlled chemical vapor deposition (CVD) process. The first layer has a first thickness and the second layer has a second thickness that is greater than the first thickness.

Abstract: A method of applying a dielectric coating on a structure array of a component of an electrical device includes applying a first layer of a first dielectric material on a structure array with an atomic layer deposition (ALD) process. The structure array is formed on a substrate and has a plurality of features, each of the plurality of features having an aspect ratio of at least 1:1.

Abstract: A method for designing a metasurface is provided. The method may include selecting a first metamaterial structure of a plurality of metamaterial structures of the metasurface; generating a forward light propagation model for the first metamaterial structure; generating a reciprocal light propagation model for the first metamaterial structure using a light manipulation function for the metasurface; determining a first electromagnetic response difference between the forward light propagation model and the reciprocal light propagation model; and determining a first property range of the first metamaterial structure such that the first electromagnetic response difference is optimized.

Abstract: An optics-integrated confinement apparatus system comprises a confinement apparatus chip having a confinement apparatus formed thereon and having at least one apparatus optical element disposed and/or formed thereon.