Abstract: A method of introducing a bandgap in single layer graphite on a SiO2 substrate comprising the steps of preparing graphene flakes and CVD grown graphene films on a SiO2/Si substrate and performing hydrogenation of the graphene. Additionally, controlling the majority carrier type via surface adsorbates.

Abstract: A method of making a graphene spin filter device by chemical vapor deposition comprising providing a first crystalline ferromagnetic metal surface, performing chemical vapor deposition and growing a graphene film on the first ferromagnetic metal surface, and depositing a second ferromagnetic film on the graphene film. A graphene spin filter device wherein the graphene is grown by chemical vapor deposition comprising a first crystalline ferromagnetic metal surface, a graphene film grown by chemical vapor deposition on the first ferromagnetic metal surface, and a second ferromagnetic film on the graphene film.

Abstract: This disclosure describes a method of making a tunnel barrier-based electronic device, in which the tunnel barrier and transport channel are made of the same material—graphene. A homoepitaxial tunnel barrier/transport device is created using a monolayer chemically modified graphene sheet as a tunnel barrier on another monolayer graphene sheet. This device displays enhanced spintronic properties over heteroepitaxial devices and is the first to use graphene as both the tunnel barrier and channel.

Abstract: A method of making a low-dimensional material chemical vapor sensor comprising exfoliating MoS2, applying the monolayer flakes of MoS2 onto a SiO2/Si wafer, applying a methylmethacrylate (MMA)/polymethylmethacrylate (PMMA) film, defining trenches for the deposition of metal contacts, and depositing one of Ti/Au, Au, and Pt in the trench and resulting in a MoS2 sensor. A low-dimensional material chemical vapor sensor comprising monolayer flakes of MoS2, trenches in the SiO2/Si wafer, metal contacts in the trenches, and thereby resulting in a MoS2 sensor. A full spectrum sensing suite comprising similarly fabricated parallel sensors made from a variety of low-dimensional materials including graphene, carbon nanotubes, MoS2, BN, and the family of transition metal dichalcogenides. The sensing suites are small, robust, sensitive, low-power, inexpensive, and fast in their response to chemical vapor analytes.

Abstract: A medium strength, liquid solvent, spray brush station system gently cleans surfaces of components during nano- and microtronics processing in cleanroom facilities. This system includes intermediate strength, yet effective surface cleaning with minimal damage to subject nano and microtronics components. Moreover, the instrument is compatible with a cleanroom environment, and provides self contained, easily manageable disposition of the peripheral mess and waste resulting from the cleaning process.

Abstract: A method of making a low-dimensional material chemical vapor sensor comprising exfoliating MoS2, applying the monolayer flakes of MoS2 onto a SiO2/Si wafer, applying a methylmethacrylate (MMA)/polymethylmethacrylate (PMMA) film, defining trenches for the deposition of metal contacts, and depositing one of Ti/Au, Au, and Pt in the trench and resulting in a MoS2 sensor. A low-dimensional material chemical vapor sensor comprising monolayer flakes of MoS2, trenches in the SiO2/Si wafer, metal contacts in the trenches, and thereby resulting in a MoS2 sensor. A full spectrum sensing suite comprising similarly fabricated parallel sensors made from a variety of low-dimensional materials including graphene, carbon nanotubes, MoS2, BN, and the family of transition metal dichalcogenides. The sensing suites are small, robust, sensitive, low-power, inexpensive, and fast in their response to chemical vapor analytes.

Abstract: A method of introducing a bandgap in single layer graphite on a SiO2 substrate comprising the steps of preparing graphene flakes and CVD grown graphene films on a SiO2/Si substrate and performing hydrogenation of the graphene. Additionally, controlling the majority carrier type via surface adsorbates.