Patents by Inventor Adam N. McCaughan
Adam N. McCaughan has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11329211Abstract: An active three-terminal superconducting device having an intersection region at which a hot spot may be controllably formed is described. The intersection region may exhibit current crowding in response to imbalances in current densities applied to channels connected to intersection region. The current crowding may form a hot spot, in which the superconducting device may exhibit a measurable resistance. In some cases, a three-terminal superconducting device may be configured to sense an amount of superconducting current flowing in a channel or loop without having to perturb the superconducting state or amount of current flowing in the channel. A three-terminal superconducting device may be used to read out a number of fluxons stored in a superconducting memory element.Type: GrantFiled: August 13, 2020Date of Patent: May 10, 2022Assignee: Massachusetts Institute of TechnologyInventors: Adam N. McCaughan, Karl K. Berggren, Qingyuan Zhao
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Patent number: 11283002Abstract: A primary single photon optoelectronic neuron includes a photonic synaptic input waveguide; an optoelectronic synapse; a synapto-dendritic electrical connection in communication with the optoelectronic synapse; an electronic dendrite in communication with the synapto-dendritic electrical connection; a dendrite-neuronal electrical interface in communication with the electronic dendrite; an integrator in communication with the dendrite-neuronal electrical interface; a superconducting wire in communication with the integrator; an axon hillock electronic-to-photonic transducer in communication with the superconducting wire; and an axonic waveguide in communication with the axon hillock electronic-to-photonic transducer and that receives the axonic photonic signal.Type: GrantFiled: August 16, 2019Date of Patent: March 22, 2022Assignee: GOVERNMENT OF THE UNITED STATES OF AMERICA, AS REPRESENTED BY THE SECRETARY OF COMMERCEInventors: Jeffrey M. Shainline, Manuel A. Castellanos-Beltran, Adam N. McCaughan, Sae Woo Nam
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Publication number: 20210028343Abstract: An active three-terminal superconducting device having an intersection region at which a hot spot may be controllably formed is described. The intersection region may exhibit current crowding in response to imbalances in current densities applied to channels connected to intersection region. The current crowding may form a hot spot, in which the superconducting device may exhibit a measurable resistance. In some cases, a three-terminal superconducting device may be configured to sense an amount of superconducting current flowing in a channel or loop without having to perturb the superconducting state or amount of current flowing in the channel. A three-terminal superconducting device may be used to read out a number of fluxons stored in a superconducting memory element.Type: ApplicationFiled: August 13, 2020Publication date: January 28, 2021Applicant: Massachusetts Institute of TechnologyInventors: Adam N. McCaughan, Karl K. Berggren, Qingyuan Zhao
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Patent number: 10749097Abstract: An active three-terminal superconducting device having an intersection region at which a hot spot may be controllably formed is described. The intersection region may exhibit current crowding in response to imbalances in current densities applied to channels connected to intersection region. The current crowding may form a hot spot, in which the superconducting device may exhibit a measurable resistance. In some cases, a three-terminal superconducting device may be configured to sense an amount of superconducting current flowing in a channel or loop without having to perturb the superconducting state or amount of current flowing in the channel. A three-terminal superconducting device may be used to read out a number of fluxons stored in a superconducting memory element.Type: GrantFiled: April 1, 2016Date of Patent: August 18, 2020Assignee: Massachusetts Institute of TechnologyInventors: Adam N. McCaughan, Karl K. Berggren, Qingyuan Zhao
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Publication number: 20200052183Abstract: A primary single photon optoelectronic neuron includes a photonic synaptic input waveguide; an optoelectronic synapse; a synapto-dendritic electrical connection in communication with the optoelectronic synapse; an electronic dendrite in communication with the synapto-dendritic electrical connection; a dendrite-neuronal electrical interface in communication with the electronic dendrite; an integrator in communication with the dendrite-neuronal electrical interface; a superconducting wire in communication with the integrator; an axon hillock electronic-to-photonic transducer in communication with the superconducting wire; and an axonic waveguide in communication with the axon hillock electronic-to-photonic transducer and that receives the axonic photonic signal.Type: ApplicationFiled: August 16, 2019Publication date: February 13, 2020Inventors: Jeffrey M. Shainline, Manuel A. Castellanos-Beltran, Adam N. McCaughan, Sae Woo Nam
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Patent number: 10171086Abstract: A three-terminal device that exhibits transistor-like functionality at cryogenic temperatures may be formed from a single layer of superconducting material. A main current-carrying channel of the device may be toggled between superconducting and normal conduction states by applying a control signal to a control terminal of the device. Critical-current suppression and device geometry are used to propagate a normal-conduction hotspot from a gate constriction across and along a portion of the main current-carrying channel. The three-terminal device may be used in various superconducting signal-processing circuitry.Type: GrantFiled: March 11, 2014Date of Patent: January 1, 2019Assignee: Massachusetts Institute of TechnologyInventors: Adam N. McCaughan, Karl K. Berggren
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Publication number: 20180090661Abstract: An active three-terminal superconducting device having an intersection region at which a hot spot may be controllably formed is described. The intersection region may exhibit current crowding in response to imbalances in current densities applied to channels connected to intersection region. The current crowding may form a hot spot, in which the superconducting device may exhibit a measurable resistance. In some cases, a three-terminal superconducting device may be configured to sense an amount of superconducting current flowing in a channel or loop without having to perturb the superconducting state or amount of current flowing in the channel. A three-terminal superconducting device may be used to read out a number of fluxons stored in a superconducting memory element.Type: ApplicationFiled: April 1, 2016Publication date: March 29, 2018Applicant: MASSACHUSETTS INTITUTE OF TECHNOLOGYInventors: Adam N. McCaughan, Karl K. Berggren, Qingyuan Zhao Zhao
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Patent number: 9509315Abstract: A three-terminal device that exhibits transistor-like functionality at cryogenic temperatures may be formed from a single layer of superconducting material. A main current-carrying channel of the device may be toggled between superconducting and normal conduction states by applying a control signal to a control terminal of the device. Critical-current suppression and device geometry are used to propagate a normal-conduction hotspot from a gate constriction across and along a portion of the main current-carrying channel. The three-terminal device may be used in various superconducting signal-processing circuitry.Type: GrantFiled: March 11, 2014Date of Patent: November 29, 2016Assignee: Massachusetts Institute of TechnologyInventors: Adam N. McCaughan, Karl K. Berggren
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Publication number: 20160028403Abstract: A three-terminal device that exhibits transistor-like functionality at cryogenic temperatures may be formed from a single layer of superconducting material. A main current-carrying channel of the device may be toggled between superconducting and normal conduction states by applying a control signal to a control terminal of the device. Critical-current suppression and device geometry are used to propagate a normal-conduction hotspot from a gate constriction across and along a portion of the main current-carrying channel. The three-terminal device may be used in various superconducting signal-processing circuitry.Type: ApplicationFiled: March 11, 2014Publication date: January 28, 2016Applicant: Massachusetts Institute of TechnologyInventors: Adam N. McCaughan, Karl K. Berggren
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Publication number: 20160028402Abstract: A three-terminal device that exhibits transistor-like functionality at cryogenic temperatures may be formed from a single layer of superconducting material. A main current-carrying channel of the device may be toggled between superconducting and normal conduction states by applying a control signal to a control terminal of the device. Critical-current suppression and device geometry are used to propagate a normal-conduction hotspot from a gate constriction across and along a portion of the main current-carrying channel. The three-terminal device may be used in various superconducting signal-processing circuitry.Type: ApplicationFiled: March 11, 2014Publication date: January 28, 2016Applicant: Massachusetts Institute of TechnologyInventors: Adam N. McCaughan, Karl K. Berggren