Abstract: The invention is a method and apparatus for determining characteristics of a sample. The system and method provide for detecting a monitor beam reflected off a mirror, where the monitor beam corresponds to the intensity of light incident upon the sample. The system and method also provide for detecting a measurement beam, where the measurement beam has been reflected off the sample being characterized. Both the monitor beam and the measurement beam are transmitted through the same transmission path, and detected by the same detector. Thus, potential sources of variations between the monitor beam and the measurement beam which are not due to the characteristics of the sample are minimized. Reflectivity information for the sample can be determined by comparing data corresponding to the measurement beam relative to data corresponding the monitor beam.

Abstract: The invention is a method and apparatus for determining characteristics of a sample. The system and method provide for detecting a monitor beam reflected off a mirror, where the monitor beam corresponds to the intensity of light incident upon the sample. The system and method also provide for detecting a measurement beam, where the measurement beam has been reflected off the sample being characterized. Both the monitor beam and the measurement beam are transmitted through the same transmission path, and detected by the same detector. Thus, potential sources of variations between the monitor beam and the measurement beam which are not due to the characteristics of the sample are minimized. Reflectivity information for the sample can be determined by comparing data corresponding to the measurement beam relative to data corresponding the monitor beam.

Abstract: The invention is a method and apparatus for determining characteristics of a sample. The system and method provide for detecting a monitor beam reflected off a mirror, where the monitor beam corresponds to the intensity of light incident upon the sample. The system and method also provide for detecting a measurement beam, where the measurement beam has been reflected off the sample being characterized. Both the monitor beam and the measurement beam are transmitted through the same transmission path, and detected by the same detector. Thus, potential sources of variations between the monitor beam and the measurement beam which are not due to the characteristics of the sample are minimized. Reflectivity information for the sample can be determined by comparing data corresponding to the measurement beam relative to data corresponding the monitor beam.

Abstract: A method for optically inspecting and evaluating a semiconductor wafer includes projecting a probe beam at two overlay targets. Each overlay target includes an upper grating and a lower grating. At each target, the combined intensity of the 1st diffracted orders generated by the upper and lower gratings are measured. The combined intensity of the −1st diffracted orders generated by the upper and lower gratings are also measured for each target. The method then calculates an overlay offset between an upper layer and a lower layer as a function of the measured intensity information.

Abstract: A polarized sample beam of broadband radiation is focused onto the surface of a sample and the radiation modified by the sample is collected by means of a mirror system in different planes of incidence. The sample beam focused to the sample has a multitude of polarization states. The modified radiation is analyzed with respect to a polarization plane to provide a polarimetric spectrum. Thickness and refractive information may then be derived from the spectrum. Preferably the polarization of the sample beam is altered only by the focusing and the sample, and the analyzing is done with respect to a fixed polarization plane. In the preferred embodiment, the focusing of the sample beam and the collection of the modified radiation are repeated employing two different apertures to detect the presence or absence of a birefringence axis in the sample. In another preferred embodiment, the above-described technique may be combined with ellipsometry for determining the thicknesses and refractive indices of thin films.

Abstract: The invention is a method and apparatus for determining characteristics of a sample. The system and method provide for detecting a monitor beam reflected off a mirror, where the monitor beam corresponds to the intensity of light incident upon the sample. The system and method also provide for detecting a measurement beam, where the measurement beam has been reflected off the sample being characterized. Both the monitor beam and the measurement beam are transmitted through the same transmission path, and detected by the same detector. Thus, potential sources of variations between the monitor beam and the measurement beam which are not due to the characteristics of the sample are minimized. Reflectivity information for the sample can be determined by comparing data corresponding to the measurement beam relative to data corresponding the monitor beam.

Abstract: A polarized sample beam of broadband radiation is focused onto the surface of a sample and the radiation modified by the sample is collected by means of a mirror system in different planes of incidence. The sample beam focused to the sample has a multitude of polarization states. The modified radiation is analyzed with respect to a polarization plane to provide a polarimetric spectrum. Thickness and refractive information may then be derived from the spectrum. Preferably the polarization of the sample beam is altered only by the focusing and the sample, and the analyzing is done with respect to a fixed polarization plane. In the preferred embodiment, the focusing of the sample beam and the collection of the modified radiation are repeated employing two different apertures to detect the presence or absence of a birefringence axis in the sample. In another preferred embodiment, the above-described technique may be combined with ellipsometry for determining the thicknesses and refractive indices of thin films.

Abstract: A polarized sample beam of broadband radiation is focused onto the surface of a sample and the radiation modified by the sample is collected by means of a mirror system in different planes of incidence. The sample beam focused to the sample has a multitude of polarization states. The modified radiation is analyzed with respect to a polarization plane to provide a polarimetric spectrum. Thickness and refractive information may then be derived from the spectrum. Preferably the polarization of the sample beam is altered only by the focusing and the sample, and the analyzing is done with respect to a fixed polarization plane. In the preferred embodiment, the focusing of the sample beam and the collection of the modified radiation are repeated employing two different apertures to detect the presence or absence of a birefringence axis in the sample. In another preferred embodiment, the above-described technique may be combined with ellipsometry for determining the thicknesses and refractive indices of thin films.