Abstract: The disclosure relates to double stranded ribonucleic acid (dsRNAi) agents and compositions targeting a prion protein (PRNP) gene, as well as methods of inhibiting expression of a PRNP gene and methods of treating subjects having a PRNP-associated disease or disorder, e.g., Prion diseases, using such dsRNAi agents and compositions.

Abstract: Provided herein are nucleic acid trans-splicing molecules (e.g., pre-mRNA trans-splicing molecules (RTMs); RNA exon editing molecules) capable of correcting mutations in the ABCA4 gene. Such molecules are useful in the treatment of disorders such as ABCA4-associated retinal dystrophies (e.g., Stargardt Disease or cone-rod dystrophy). Also described herein are methods of using the nucleic acid trans-splicing molecules described herein to correct mutations in ABCA4, thereby treating disorders associated with mutations in ABCA4 and use of the nucleic acid trans-splicing molecules described herein for treating disorders associated with mutations in ABCA4 and in the preparation of medicaments for the treatment of disorders associated with mutations in ABCA4.

Abstract: A method for producing a high yield of high quality, low size distribution, and size tunable semiconductor nanocrystals. The method produces III-V, II-VI, II-V, IV-VI, IV, ternary, quarternary, and quinary semiconductor nanocrystals (quantum dots) using a catalyst assisted two-phase reaction.

Abstract: A water-stable semiconductor nanocrystal complex that is stable and has high luminescent quantum yield. The water-stable semiconductor nanocrystal complex has a semiconductor nanocrystal core of a III-V semiconductor nanocrystal material and a water-stabilizing layer. A method of making a water-stable semiconductor nanocrystal complex is also provided.

Abstract: A water-stable semiconductor nanocrystal complex that is stable and has high luminescent quantum yield. The water-stable semiconductor nanocrystal complex has a semiconductor nanocrystal core of a III-V semiconductor nanocrystal material and a water-stabilizing layer. A method of making a water-stable semiconductor nanocrystal complex is also provided.

Abstract: A semiconductor nanocrystal composition comprising a Group V to VI semiconductor material and a method of making same. The method includes synthesizing a semiconductor nanocrystal core, where the synthesizing includes dissolving a Group V to VI anion gas in a first solvent to produce a Group V to VI anion precursor, preparing a cation precursor, and reacting the Group V to VI anion precursor with the cation precursor in the presence of a second solvent. The reacting may occur in a high pressure vessel.

Abstract: A method for producing a high yield of high quality, low size distribution, and size tunable semiconductor nanocrystals. The method produces III-V, II-VI, II-V, IV-VI, IV, ternary, quarternary, and quinary semiconductor nanocrystals (quantum dots) using a catalyst assisted two-phase reaction.

Abstract: A semiconductor nanocrystal complex including a metal layer formed on the outer surface of a semiconductor nanocrystal core after synthesis of the semiconductor nanocrystal core and a method for preparing a nanocrystal complex comprising forming a metal layer on a semiconductor nanocrystal core after synthesis of the semiconductor nanocrystal core. The metal layer may passivate the surface of the semiconductor nanocrystal core and protect the semiconductor nanocrystal core from the effects of oxidation. Also provided is a semiconductor nanocrystal complex with a shell grown onto the metal layer formed on the semiconductor nanocrystal core. In this embodiment, the metal layer may prevent lattice mismatch between the semiconductor shell and the semiconductor nanocrystal core.

Abstract: A semiconductor nanocrystal complex that is stable and has high luminescent quantum yield. The semiconductor nanocrystal complex has a semiconductor nanocrystal core of a III-V semiconductor nanocrystal material. A method of making a semiconductor nanocrystal complex is also provided. The method includes synthesizing a semiconductor nanocrystal core of a III-V semiconductor nanocrystal material, and forming a metal layer on the semiconductor nanocrystal core after synthesis of the semiconductor nanocrystal core.

Abstract: A semiconductor nanocrystal composition comprising a Group V to VI semiconductor material and a method of making same. The method includes synthesizing a semiconductor nanocrystal core, where the synthesizing includes dissolving a Group V to VI anion gas in a first solvent to produce a Group V to VI anion precursor, preparing a cation precursor, and reacting the Group V to VI anion precursor with the cation precursor in the presence of a second solvent. The reacting may occur in a high pressure vessel.

Abstract: A water-stable semiconductor nanocrystal complex that is stable and has high luminescent quantum yield. The water-stable semiconductor nanocrystal complex has a semiconductor nanocrystal core of a III-V semiconductor nanocrystal material and a water-stabilizing layer. A method of making a water-stable semiconductor nanocrystal complex is also provided.

Abstract: A semiconductor nanocrystal complex including a metal layer formed on the outer surface of a semiconductor nanocrystal core after synthesis of the semiconductor nanocrystal core and a method for preparing a nanocrystal complex comprising forming a metal layer on a semiconductor nanocrystal core after synthesis of the semiconductor nanocrystal core. The metal layer may passivate the surface of the semiconductor nanocrystal core and protect the semiconductor nanocrystal core from the effects of oxidation. Also provided is a semiconductor nanocrystal complex with a shell grown onto the metal layer formed on the semiconductor nanocrystal core. In this embodiment, the metal layer may prevent lattice mismatch between the semiconductor shell and the semiconductor nanocrystal core.

Abstract: A semiconductor nanocrystal complex that is stable and has high luminescent quantum yield. The semiconductor nanocrystal complex has a semiconductor nanocrystal core of a III-V semiconductor nanocrystal material. A method of making a semiconductor nanocrystal complex is also provided. The method includes synthesizing a semiconductor nanocrystal core of a III-V semiconductor nanocrystal material, and forming a metal layer on the semiconductor nanocrystal core after synthesis of the semiconductor nanocrystal core.