Abstract: The invention relates to a method of preparing thiophene-containing or furan-containing conjugated compounds such as polythiophene. The method uses a precursor compound having tetrahydrothiophene or tetrahydrofuran precursor units having arylthio or alkylthio substituents. The precursor units can be thermally converted into thiophene or furan units. Due to the presence of the precursor units the precursor compound is soluble and can, unlike the corresponding conjugated compound, be processed from solution.

Abstract: The invention relates to a method of preparing thiophene-containing or furan-containing conjugated compounds such as polythiophene. The method uses a precursor compound having tetrahydrothiophene or tetrahydrofuran precursor units having arylthio or alkylthio substituents. The precursor units can be thermally converted into thiophene or furan units. Due to the presence of the precursor units the precursor compound is soluble and can, unlike the corresponding conjugated compound, be processed from solution.

Abstract: The invention relates to a method of preparing thiophene-containing or furan-containing conjugated compounds such as polythiophene. The method uses a precursor compound having tetrahydrothiophene or tetrahydrofuran precursor units having arylthio or alkylthio substituents. The precursor units can be thermally converted into thiophene or furan units. Due to the presence of the precursor units the precursor compound is soluble and can, unlike the corresponding conjugated compound, be processed from solution.

Abstract: A semiconductor device is provided with an organic material which is formed by a solid-state mixture of organic donor and organic acceptor molecules. A semiconducting solid-state mixture is known with molar ratios between donor and acceptor molecules of 1.3:2 and 1.66:2. The known solid-state mixture has the disadvantage that its electrical conductivity is comparatively high, so that it is not possible to manufacture switchable devices from the mixture. Here the material includes an n- or p-type semiconductor material, the n-type semiconductor material having a molar ratio between the donor and acceptor molecules below 0.05, and the p-type semiconductor material having this ratio above 20. These solid-state mixtures may be used for manufacturing switchable semiconductor devices. The n- and p-type organic solid-state mixtures can be used for manufacturing transistors, diodes, and field effect transistors in a same manner as, for example, doped silicon or germanium.

Abstract: A method is provided for forming in a semiconductive conjugated polymer at least first and second legions having different optical properties. The method comprises: forming a layer of a precursor polymer and permitting the first region to come into contact with a reactant, such as an acid, and heat while permitting the second region to come into contact with a lower concentration of the reactant. The reactant affects the conversion conditions of the precursor polymer in such a way as to control the optical properties of at least the first region so that the optical properties of the first region are different from those of the second region. The precursor polymer may comprise a poly(arylene-1, 2-ethanediyl) polymer, at least some of the ethane groups of which include a modifier group whose susceptibility to elimination is increased in the presence of the reactant.