Abstract: Systems and methods for controlling current or mitigating electromagnetic or radiation interference effects using a combination of a metal-oxide semiconductor field effect transistor (MOSFET) and junction field effect transistor (JFET) disposed perpendicularly and within a certain orientation to each other. An embodiment of the invention can be formed and operable for modulating current and/or voltage response or mitigating electromagnetic or radiation interference effects on the MOSFET by controlling a semi-conductive channel region (SCR) using an additional gate, e.g., JFET, disposed perpendicularly with respect to the MOSFET configured to generate an electromagnetic field into the MOSFET's semi-SCR. A control system for controlling operation is also provided to include automated systems including sensors as well as manually operated systems. Automated systems can include radiation sensors as well as other control systems such as radio frequency transmitter or receiver systems.

Abstract: Systems and methods for controlling current or mitigating electromagnetic or radiation interference effects using structures configured to cooperatively control a common semi-conductive channel region (SCR). One embodiment includes providing a metal oxide semiconductor field effect transistor (MOSFET) section formed with an exemplary SCR and two junction field effect transistor (JFET) gates on opposing sides of the MOSFET's SCR such that operation of the JFET modulates or controls current through the MOSFET's. With two JFET gate terminals to modulate various embodiments' signal(s), an improved mixer, demodulator, and gain control element in, e.g., analog circuits can be realized. Additionally, a direct current (DC)-biased terminal of one embodiment decreases cross-talk with other devices. A lens structure can also be incorporated into MOSFET structures to further adjust operation of the MOSFET.

Abstract: Systems and methods for controlling current or mitigating electromagnetic or radiation interference effects using a combination of a metal-oxide semiconductor field effect transistor (MOSFET) and junction field effect transistor (JFET) disposed perpendicularly and within a certain orientation to each other. An embodiment of the invention can be formed and operable for modulating current and/or voltage response or mitigating electromagnetic or radiation interference effects on the MOSFET by controlling a semi-conductive channel region (SCR) using an additional gate, e.g., JFET, disposed perpendicularly with respect to the MOSFET configured to generate an electromagnetic field into the MOSFET's semi-SCR. A control system for controlling operation is also provided to include automated systems including sensors as well as manually operated systems. Automated systems can include radiation sensors as well as other control systems such as radio frequency transmitter or receiver systems.

Abstract: Systems and methods for controlling current or mitigating electromagnetic or radiation interference effects using structures configured to cooperatively control a common semi-conductive channel region (SCR). One embodiment includes providing a metal oxide semiconductor field effect transistor (MOSFET) section formed with an exemplary SCR and two junction field effect transistor (JFET) gates on opposing sides of the MOSFET's SCR such that operation of the JFET modulates or controls current through the MOSFET's. With two JFET gate terminals to modulate various embodiments' signal(s), an improved mixer, demodulator, and gain control element in, e.g., analog circuits can be realized. Additionally, a direct current (DC)-biased terminal of one embodiment decreases cross-talk with other devices. A lens structure can also be incorporated into MOSFET structures to further adjust operation of the MOSFET.