Abstract: An optical sensing module suitable for wearable devices, the optical sensing module comprising: a silicon or silicon nitride transmitter photonic integrated circuit (PIC), the transmitter PIC comprising: a plurality of lasers, each laser of the plurality of lasers operating at a wavelength that is different from the wavelength of the others; an optical manipulation region, the optical manipulation region comprising one or more of: an optical modulator, optical multiplexer (MUX); and additional optical manipulation elements; and one or more optical outputs for light originating from the plurality of lasers.

Abstract: An optical modulator. The optical modulator comprising: a micro-ring resonator; and a bus waveguide, including an input waveguide region, an output waveguide region, and a coupling waveguide region optically coupled to the micro-ring resonator and located between the input waveguide region and the output waveguide region. The micro-ring resonator includes a modulation region, the modulation region being formed of a silicon portion and a III-V semiconductor portion separated by a crystalline rare earth oxide dielectric layer.

Abstract: An optical multiplexer. The optical multiplexer comprising: a plurality of input waveguides, each comprising an input slab portion and an input rib portion; an output waveguide, comprising an output slab portion and output rib portion; and a wavelength multiplexer element, coupled to each input waveguide and the output waveguide, the wavelength multiplexer element comprising a slab waveguide which includes a grating configured to multiplex signals of differing wavelengths, received from the input waveguides, into a multiplexed signal, and provide the multiplexed signal to the output waveguide. The input rib portion(s) of one or more of the input waveguides are tapered so as to decrease in width in a direction towards the slab waveguide of the wavelength multiplexer element which is an echelle grating or an arrayed waveguide grating.

Abstract: An optical sensing module suitable for wearable devices, the optical sensing module comprising: a silicon or silicon nitride transmitter photonic integrated circuit (PIC), the transmitter PIC comprising: a plurality of lasers, each laser of the plurality of lasers operating at a wavelength that is different from the wavelength of the others; an optical manipulation region, the optical manipulation region comprising one or more of: an optical modulator, optical multiplexer (MUX); and additional optical manipulation elements; and one or more optical outputs for light originating from the plurality of lasers.

Abstract: An electro-optical modulator. The electro-optical modulator comprising: an input waveguide, configured to guide light into a modulation region of the electro-optical modulator; a plurality of sub-modulators, within the modulation region, each sub-modulator having a transfer function between an applied voltage and an optical phase shift; and an output waveguide, configured to guide light out of the modulation region. The combination of the transfer functions of each sub-modulator is such that a total transfer function between an applied voltage and an optical phase shift of the modulation region is substantially linear over a range of operating voltages.

Abstract: An optical ring modulator for use as a PAM-N modulator, the optical ring modulator comprising: a first optical waveguide which forms a bus waveguide; a ring waveguide optically coupled to the bus waveguide; wherein, the ring waveguide comprises: a first electrode region having a first pn junction or first Moscap, the first pn junction or first Moscap configured to generate a first phase shift upon application of a given voltage across the first pn junction or first Moscap; and a second electrode region having a second pn junction or second Moscap, the second pn junction or second Moscap configured to generate a second phase shift when the given voltage is applied across the second pn junction or second Moscap, wherein the second phase shift is less than the first phase shift.

Abstract: A MOS capacitor-type optical modulator comprising a silicon-on-insulator (SOI) substrate, a first doped region in a silicon device layer of the SOI substrate, and a second doped region laterally separated from the first doped region by a vertically extending insulator layer to form a lateral MOS capacitor region. The first doped region, second doped region and insulator layer are formed from different materials.

Abstract: An optical isolator on a silicon photonic integrated circuit. The optical isolator comprising: a polarization splitter; a polarization rotator; and a Faraday rotator. The Faraday rotator comprises: one or more magnets providing a magnetic field; and a silicon spiral delay line. The silicon spiral delay line being formed from a silicon waveguide shaped into a spiral region having no built-in phase shifters and a central region within the spiral region. The central region having no more than a total of 180 degree of phase shifters.

Abstract: A metal-oxide semiconductor capacitor, MOSCAP, based electro-optic modulator. The modulator comprising: an input waveguide; a modulating region, coupled to the input waveguide; and an output waveguide, coupled to the modulating region. The modulating region includes an n-i-p-n junction, the n-i-p-n junction comprising: a first n doped region, spaced from a p doped region by an intrinsic region, and a second n doped region, separated from the intrinsic region by the p doped region and on an opposing side of the intrinsic region to the first n doped region.

Abstract: A chemical sensor, including a porous optical waveguide. The loss or index of refraction, or both, of the porous waveguide is affected by the presence of one or more chemicals of interest.

Abstract: A chemical sensor, including a porous optical waveguide. The loss or index of refraction, or both, of the porous waveguide is affected by the presence of one or more chemicals of interest.