Patents by Inventor Adam Selsey

Adam Selsey has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Sequential tantalum-nitride deposition
    Patent number: 7642201
    Abstract: An iPVD system is programmed to deposit uniform material, such as barrier material, into high aspect ratio nano-size features on semiconductor substrates using a multi-step process within a vacuum chamber which enhances the sidewall coverage compared to the field and bottom coverage(s) while minimizing or eliminating overhang.
    Type: Grant
    Filed: January 24, 2008
    Date of Patent: January 5, 2010
    Assignee: Tokyo Electron Limited
    Inventors: Frank M. Cerio, Jr., Shigeru Mizuno, Tsukasa Matsuda, Adam Selsey
  • SEQUENTIAL TANTALUM-NITRIDE DEPOSITION
    Publication number: 20090191721
    Abstract: An iPVD system is programmed to deposit uniform material, such as barrier material, into high aspect ratio nano-size features on semiconductor substrates using a multi-step process within a vacuum chamber which enhances the sidewall coverage compared to the field and bottom coverage(s) while minimizing or eliminating overhang.
    Type: Application
    Filed: January 24, 2008
    Publication date: July 30, 2009
    Applicant: TOKYO ELECTRON LIMITED
    Inventors: Frank M. Cerio, JR., Shigeru Mizuno, Tsukasa Matsuda, Adam Selsey