Patents by Inventor Adam Thomas ROSILLO

Adam Thomas ROSILLO has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • METHOD OF MANUFACTURE FOR A CASCODE SEMICONDUCTOR DEVICE
    Publication number: 20230123782
    Abstract: A method of manufacturing a cascode HEMT semiconductor device including a lead frame, a die pad with an indentation attached to the lead frame, and a HEMT die attached to the die pad. The HEMT die includes a HEMT source and a HEMT drain on a first side, and a HEMT gate on a second side. The device further includes a MOSFET die attached to the source of the HEMT die, and the MOSFET die includes a MOSFET source, a MOSFET gate and a MOSFET drain. The MOSFET drain is connected to the HEMT source, and the MOSFET source includes a MOSFET source clip. The MOSFET source clip includes a pillar so to connect the MOSFET source to the HEMT gate, and the connection between the MOSFET source to the HEMT gate is established by a conductive material.
    Type: Application
    Filed: December 21, 2022
    Publication date: April 20, 2023
    Applicant: NEXPERIA B.V.
    Inventors: Ricardo Yandoc, Robert Montgomery, Adam Thomas Rosillo
  • Cascode semiconductor
    Patent number: 11538744
    Abstract: This disclosure relates to a cascode HEMT semiconductor device including a lead frame, a die pad attached to the lead frame, and a HEMT die attached to the die pad. The HEMT die includes a HEMT source and a HEMT drain on a first side, and a HEMT gate on a second side. The device further includes a MOSFET die attached to the source of the HEMT die, and the MOSFET die includes a MOSFET source, a MOSFET gate and a MOSFET drain. The MOSFET drain is connected to the HEMT source, and the MOSFET source includes a MOSFET source clip. The MOSFET source clip includes a pillar so to connect the MOSFET source to the HEMT gate, and the connection between the MOSFET source to the HEMT gate is established by a conductive material.
    Type: Grant
    Filed: March 17, 2021
    Date of Patent: December 27, 2022
    Assignee: Nexperia B.V.
    Inventors: Ricardo Yandoc, Robert Montgomery, Adam Thomas Rosillo
  • CASCODE SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURE
    Publication number: 20210296218
    Abstract: This disclosure relates to a cascode HEMT semiconductor device including a lead frame, a die pad attached to the lead frame, and a HEMT die attached to the die pad. The HEMT die includes a HEMT source and a HEMT drain on a first side, and a HEMT gate on a second side. The device further includes a MOSFET die attached to the source of the HEMT die, and the MOSFET die includes a MOSFET source, a MOSFET gate and a MOSFET drain. The MOSFET drain is connected to the HEMT source, and the MOSFET source includes a MOSFET source clip. The MOSFET source clip includes a pillar so to connect the MOSFET source to the HEMT gate, and the connection between the MOSFET source to the HEMT gate is established by a conductive material.
    Type: Application
    Filed: March 17, 2021
    Publication date: September 23, 2021
    Applicant: NEXPERIA B.V.
    Inventors: Ricardo YANDOC, Robert MONTGOMERY, Adam Thomas ROSILLO