Abstract: The invention includes a packaged semiconductor device in which the bond wires are bonded to the leads with an aluminum bump bond. The semiconductor device is mounted on a leadframe having leads with a nickel plating. To form the bump bond between a fine aluminum wire, such as a 2 mil diameter wire, and the lead, an aluminum bump is bonded to the nickel plating and the wire is bonded to the bump. The bump is aluminum doped with nickel and is formed from a large diameter wire, such as a 6 mil diameter wire.

Abstract: A power device package according to the one embodiment of the present invention includes an insulating substrate with an interconnection pattern disposed on the insulating substrate. The interconnection pattern comprises a single conductive layer comprising a first metal layer, and a multiple conductive layer comprising another first metal layer and a second metal layer disposed on the another first metal layer. A plurality of wires are attached to an upper surface of the single conductive layer and/or an upper surface of the second metal layer of the multiple conductive layer. Contact pads on a power control semiconductor chip and a low power semiconductor chip driving the power control semiconductor chip are electrically connected to the wires.

Abstract: The invention includes a packaged semiconductor device in which the bond wires are bonded to the leads with an aluminum bump bond. The semiconductor device is mounted on a leadframe having leads with a nickel plating. To form the bump bond between a fine aluminum wire, such as a 2 mil diameter wire, and the lead, an aluminum bump is bonded to the nickel plating and the wire is bonded to the bump. The bump is aluminum doped with nickel and is formed from a large diameter wire, such as a 6 mil diameter wire.

Abstract: A power device package according to the one embodiment of the present invention includes an insulating substrate with an interconnection pattern disposed on the insulating substrate. The interconnection pattern comprises a single conductive layer comprising a first metal layer, and a multiple conductive layer comprising another first metal layer and a second metal layer disposed on the another first metal layer. A plurality of wires are attached to an upper surface of the single conductive layer and/or an upper surface of the second metal layer of the multiple conductive layer. Contact pads on a power control semiconductor chip and a low power semiconductor chip driving the power control semiconductor chip are electrically connected to the wires.

Abstract: The invention includes a packaged semiconductor device in which the bond wires are bonded to the leads with an aluminum bump bond. The semiconductor device is mounted on a leadframe having leads with a nickel plating. To form the bump bond between a fine aluminum wire, such as a 2 mil diameter wire, and the lead, an aluminum bump is bonded to the nickel plating and the wire is bonded to the bump. The bump is aluminum doped with nickel and is formed from a large diameter wire, such as a 6 mil diameter wire.