Patents by Inventor Adekunle Adeyeye

Adekunle Adeyeye has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10186746
    Abstract: A waveguide for spin wave (SW) transmission, a method of fabricating a waveguide for SW transmission, and a method of transmitting an SW. The waveguide comprises a plurality of nanomagnetic material elements, each nanomagnetic material element having a respective predetermined geometric shape such that each nanomagnetic material element exhibits a deterministic ground state initializable by a magnetic field applied across the waveguide; wherein the nanomagnetic material elements are disposed relative to each other for dipolar coupling between adjacent nanomagnetic material elements.
    Type: Grant
    Filed: December 19, 2016
    Date of Patent: January 22, 2019
    Assignee: National University of Singapore
    Inventors: Arabinda Haldar, Dheeraj Kumar, Adekunle Adeyeye
  • Patent number: 10141506
    Abstract: In one embodiment, a capacitor-like structure is constructed that includes an RF co-sputtered TMO layer. The capacitor-like structure includes a first electrode (e.g., a bottom electrode) constructed of a first metal (e.g., Pt), a RF co-sputtered TMO layer on the first electrode including a first oxide and a second oxide (e.g., a RF co-sputtered Al2O3—NiO layer), and a second electrode constructed of a second metal (e.g., Pt) in contact with the co-sputtered TMO layer. The capacitor-like structure is resistively switchable due to formation and rupture of CFs through the RF co-sputtered TMO layer in response to application of a voltage between the first electrode and the second electrode. The RF co-sputtered TMO layer may be grown using at least one direct oxide target (e.g., a NiO target) in a noble gas (e.g., Ar) atmosphere.
    Type: Grant
    Filed: February 16, 2017
    Date of Patent: November 27, 2018
    Assignee: National University of Singapore
    Inventors: Alwyn Rebello, Adekunle Adeyeye
  • Patent number: 10020415
    Abstract: A device and a method of forming a device. The method comprises forming an oxide material film; forming two metal electrodes on the oxide material film, the two metal electrodes laterally spaced from each other such that an electric path between the two electrodes comprises at least a portion of the oxide material film; configuring the oxide material film such that a current-voltage characteristic of the device as measured via the two metal electrodes exhibits nonlinearity and rectification.
    Type: Grant
    Filed: January 5, 2017
    Date of Patent: July 10, 2018
    Assignee: NATIONAL UNIVERSITY OF SINGAPORE
    Inventors: Alwyn Rebello, Adekunle Adeyeye
  • Patent number: 9755652
    Abstract: A nanomagnetic structure and a method of fabricating a nanomagnetic structure. The nanomagnetic comprises two or more nanomagnetic material elements, each nanomagnetic material element having a respective predetermined geometric shape such that the nanomagnetic structure exhibits different stable ground states initializable by magnetic fields applied across the nanomagnetic structure in respective different directions; wherein the nanomagnetic material elements are disposed relative to each other such that the magnetic structure exhibits a difference in effective internal magnetic field strength between the different stable ground states. Advantageously, this variation in the internal magnetic field strength is the key for distinct dynamic response associated with the different magnetic ground states. Reconfigurable operation has been shown based on this magnetization dynamics in example embodiments.
    Type: Grant
    Filed: June 29, 2016
    Date of Patent: September 5, 2017
    Assignee: National University of Singapore
    Inventors: Arabinda Haldar, Adekunle Adeyeye
  • Publication number: 20170237002
    Abstract: In one embodiment, a capacitor-like structure is constructed that includes an RF co-sputtered TMO layer. The capacitor-like structure includes a first electrode (e.g., a bottom electrode) constructed of a first metal (e.g., Pt), a RF co-sputtered TMO layer on the first electrode including a first oxide and a second oxide (e.g., a RF co-sputtered Al2O3—NiO layer), and a second electrode constructed of a second metal (e.g., Pt) in contact with the co-sputtered TMO layer. The capacitor-like structure is resistively switchable due to formation and rupture of CFs through the RF co-sputtered TMO layer in response to application of a voltage between the first electrode and the second electrode. The RF co-sputtered TMO layer may be grown using at least one direct oxide target (e.g., a NiO target) in a noble gas (e.g., Ar) atmosphere.
    Type: Application
    Filed: February 16, 2017
    Publication date: August 17, 2017
    Inventors: Alwyn Rebello, Adekunle Adeyeye
  • Publication number: 20170200851
    Abstract: A device and a method of forming a device. The method comprises forming an oxide material film; forming two metal electrodes on the oxide material film, the two metal electrodes laterally spaced from each other such that an electric path between the two electrodes comprises at least a portion of the oxide material film; configuring the oxide material film such that a current-voltage characteristic of the device as measured via the two metal electrodes exhibits nonlinearity and rectification.
    Type: Application
    Filed: January 5, 2017
    Publication date: July 13, 2017
    Applicant: NATIONAL UNIVERSITY OF SINGAPORE
    Inventors: Alwyn REBELLO, Adekunle ADEYEYE
  • Publication number: 20170179561
    Abstract: A waveguide for spin wave (SW) transmission, a method of fabricating a waveguide for SW transmission, and a method of transmitting an SW. The waveguide comprises a plurality of nanomagnetic material elements, each nanomagnetic material element having a respective predetermined geometric shape such that each nanomagnetic material element exhibits a deterministic ground state initializable by a magnetic field applied across the waveguide; wherein the nanomagnetic material elements are disposed relative to each other for dipolar coupling between adjacent nanomagnetic material elements.
    Type: Application
    Filed: December 19, 2016
    Publication date: June 22, 2017
    Inventors: Arabinda Haldar, Dheeraj Kumar, Adekunle Adeyeye
  • Publication number: 20170005663
    Abstract: A nanomagnetic structure and a method of fabricating a nanomagnetic structure. The nanomagnetic comprises two or more nanomagnetic material elements, each nanomagnetic material element having a respective predetermined geometric shape such that the nanomagnetic structure exhibits different stable ground states initializable by magnetic fields applied across the nanomagnetic structure in respective different directions; wherein the nanomagnetic material elements are disposed relative to each other such that the magnetic structure exhibits a difference in effective internal magnetic field strength between the different stable ground states. Advantageously, this variation in the internal magnetic field strength is the key for distinct dynamic response associated with the different magnetic ground states. Reconfigurable operation has been shown based on this magnetization dynamics in example embodiments.
    Type: Application
    Filed: June 29, 2016
    Publication date: January 5, 2017
    Inventors: Arabinda Haldar, Adekunle Adeyeye