Abstract: System-level thermal solutions for integrated circuit (IC) die packages including a heat pipe contiguously integrated with base plate material at the hot interface or with heat sink material at the cold interface. Base plate material may be deposited with a high throughput additive manufacturing (HTAM) technique directly upon a surface of the heat pipe to form a base plate suitable for interfacing with an IC die package. The contiguous base plate material may offer low thermal resistance in the absence of any intervening joining material (e.g., solder or brazing filler). Solder or brazing filler may also be eliminated from between a heat sink and a heat pipe by depositing wick material directly upon the heat sink with an HTAM technique. The wick material may be then enclosed by attaching a preformed half-open tube.

Abstract: A microfluidic device having a channel within a first material to thermally couple with an IC die. The channel defines an initial fluid path between a fluid inlet port and a fluid outlet port. A second material is within a portion of the channel. The second material supplements the first material to modify the initial fluid path into a final fluid path between the fluid inlet port and the fluid outlet port. The second material may have a different composition and/or microstructure than the first material.

Abstract: An integrated circuit (IC) die package substrate comprises a first trace upon, or embedded within, a dielectric material. The first trace comprises a first metal and a first via coupled to the first trace. The first via comprises the first metal and a second trace upon, or embedded within, the dielectric material. A second via is coupled to the second trace, and at least one of the second trace or the second via comprises a second metal with a different microstructure or composition than the first metal.

Abstract: An integrated circuit assembly may be fabricated having an electronic substrate, an integrated circuit device having a first surface, an opposing second surface, at least one side extending between the first surface and the second surface, and at least one through-substrate via extending into the integrated circuit device from the second surface, wherein the first surface of the integrated circuit device is electrically attached to the electronic substrate; and at least one power delivery route electrically attached to the second surface of the integrated circuit device and to the electronic substrate, wherein the at least one power delivery route is conformal to the side of the integrated circuit device and the first surface of the electronic substrate.

Abstract: Cables, cable connectors, and support structures for cantilever package and/or cable attachment may be fabricated using additive processes, such as a coldspray technique, for integrated circuit assemblies. In one embodiment, cable connectors may be additively fabricated directly on an electronic substrate. In another embodiment, seam lines of cables and/or between cables and cable connectors may be additively fused. In a further embodiment, integrated circuit assembly attachment and/or cable attachment support structures may be additively formed on an integrated circuit assembly.

Abstract: Cables, cable connectors, and support structures for cantilever package and/or cable attachment may be fabricated using additive processes, such as a coldspray technique, for integrated circuit assemblies. In one embodiment, cable connectors may be additively fabricated directly on an electronic substrate. In another embodiment, seam lines of cables and/or between cables and cable connectors may be additively fused. In a further embodiment, integrated circuit assembly attachment and/or cable attachment support structures may be additively formed on an integrated circuit assembly.

Abstract: Techniques and mechanisms for providing physically unclonable function (PUF) circuitry at a substrate which supports coupling to an integrated circuit (IC) chip. In an embodiment, the substrate comprises an array of electrodes which extend in a level of metallization at a side of the insulator layer. A cap layer, disposed on the array, is in contact with the electrodes and with a portion of the insulator layer which is between the electrodes. A material of the cap layer has a different composition or microstructure than the metallization. Regions of the cap layer variously provide respective impedances each between a corresponding two electrodes. In other embodiments, the substrate includes (or couples to) integrated circuitry that is operable to determine security information based on the detection of one or more such impedances.

Abstract: Cables, cable connectors, and support structures for cantilever package and/or cable attachment may be fabricated using additive processes, such as a coldspray technique, for integrated circuit assemblies. In one embodiment, cable connectors may be additively fabricated directly on an electronic substrate. In another embodiment, seam lines of cables and/or between cables and cable connectors may be additively fused. In a further embodiment, integrated circuit assembly attachment and/or cable attachment support structures may be additively formed on an integrated circuit assembly.

Abstract: A composite integrated circuit (IC) device structure comprising a host chip and a chiplet. The host chip comprises a first device layer and a first metallization layer. The chiplet comprises a second device layer and a second metallization layer that is interconnected to transistors of the second device layer. A top metallization layer comprising a plurality of first level interconnect (FLI) interfaces is over the chiplet and host chip. The chiplet is embedded between a first region of the first device layer and the top metallization layer. The first region of the first device layer is interconnected to the top metallization layer by one or more conductive vias extending through the second device layer or adjacent to an edge sidewall of the chiplet.

Abstract: Magnetic structures may be incorporated into integrated circuit assemblies, which will enable local heating and reflow of solder interconnects for the attachment of integrated circuit devices to electronic substrates. Such magnetic structures will eliminate exposure of the entire integrated circuit assembly to elevated temperatures for an extended period of time, which eliminates associated warpage and thermal degradation consequences from such exposure. Additionally, such magnetic structures will allow for re-workability of specific solder interconnects.

Abstract: A method of forming a waveguide comprises forming an elongate waveguide core including a dielectric material; and arranging a conductive sheet around an outside surface of the dielectric core to produce a conductive layer around the waveguide core.

Abstract: Composite IC chip including a chiplet embedded within metallization levels of a host IC chip. The chiplet may include a device layer and one or more metallization layers interconnecting passive and/or active devices into chiplet circuitry. The host IC may include a device layer and one or more metallization layers interconnecting passive and/or active devices into host chip circuitry. Features of one of the chiplet metallization layers may be directly bonded to features of one of the host IC metallization layers, interconnecting the two circuitries into a composite circuitry. A dielectric material may be applied over the chiplet. The dielectric and chiplet may be thinned with a planarization process, and additional metallization layers fabricated over the chiplet and host chip, for example to form first level interconnect interfaces. The composite IC chip structure may be assembled into a package substantially as a monolithic IC chip.

Abstract: Disclosed herein are structures, devices, and methods for electrostatic discharge protection (ESDP) in integrated circuits (ICs). For example, in some embodiments, an IC package support may include: a first conductive structure in a dielectric material; a second conductive structure in the dielectric material; and a material in contact with the first conductive structure and the second conductive structure, wherein the material includes a polymer, and the material is different from the dielectric material. The material may act as a dielectric material below a trigger voltage, and as a conductive material above the trigger voltage.

Abstract: An Integrated Circuit (IC) device comprising a first component, the first component comprising a first dielectric and a plurality of adjacent first interconnect structures within the first dielectric. The IC device comprising a second component, the second component comprising a second dielectric and a plurality of adjacent second interconnect structures within the second dielectric. A first of the second interconnect structures is in direct contact with a first of the first interconnect structures at a bond interface between the first and second components. A second of the first interconnect structures is set back a distance from a plane of the bond interface.

Abstract: Embodiments include a mixed hybrid bonding structure comprising a composite dielectric layer, where the composite dielectric layer comprises an organic dielectric material having a plurality of inorganic filler material. One or more conductive substrate interconnect structures are within the composite dielectric layer. A die is on the composite dielectric layer, the die having one or more conductive die interconnect structures within a die dielectric material. The one or more conductive die interconnect structures are directly bonded to the one or more conductive substrate interconnect structures, and the inorganic filler material of the composite dielectric layer is bonded to the die dielectric material.

Abstract: One aspect of the present disclosure provides a quantum circuit assembly that includes a substrate with one or more qubit devices, and at least one demultiplexer included in a single chip with the qubit device(s). The demultiplexer is configured to receive a combined signal from external electronics, the combined signal including a combination of a plurality of signals in different frequency ranges, and to demultiplex said plurality of signals within the combined signal. The demultiplexer is further configured to apply different demultiplexed signals to different lines of a single qubit device, or/and to different qubit devices. Providing such demultiplexers on-chip with the qubit devices advantageously allows reducing the number of input/output lines coupling the chip with qubit devices and the external electronics.

Abstract: Embodiments may relate to a material to provide electrostatic discharge (ESD) protection in an electrical device. The material may include first and second electrically-conductive carbon allotropes. The material may further include an electrically-conductive polymer that is chemically bonded to the first and second electrically-conductive carbon allotropes such that an electrical signal may pass between the first and second electrically-conductive carbon allotropes. Other embodiments may be described or claimed.

Abstract: A heat spreading material is integrated into a composite die structure including a first IC die having a first dielectric material and a first electrical interconnect structure, and a second IC die having a second dielectric material and a second electrical interconnect structure. The composite die structure may include a composite electrical interconnect structure comprising the first interconnect structure in direct contact with the second interconnect structure at a bond interface. The heat spreading material may be within at least a portion of a dielectric area through which the bond interface extends. The heat spreading material may be located within one or more dielectric materials surrounding the composite interconnect structure, and direct a flow of heat generated by one or more of the first and second IC dies.

Abstract: Integration of a side-radiating waveguide launcher system into a semiconductor package beneficially permits the coupling of a waveguide directly to the semiconductor package. Included are a first conductive member and a second conductive member separated by a dielectric material. Also included is a conductive structure, such as a plurality of vias, that conductively couples the first conductive member and the second conductive member. Together, the first conductive member, the second conductive member, and the conductive structure form an electrically conductive side-radiating waveguide launcher enclosing shaped space within the dielectric material. The shaped space includes a narrow first end and a wide second end. An RF excitation element is disposed proximate the first end and a waveguide may be operably coupled proximate the second end of the shaped space.

Abstract: A method of forming a waveguide comprises forming an elongate waveguide core including a dielectric material; and arranging a conductive sheet around an outside surface of the dielectric core to produce a conductive layer around the waveguide core.