Patents by Inventor Ader Shen

Ader Shen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11688763
    Abstract: A semiconductor device structure may include a substrate having a substrate base comprising a first dopant type; a semiconductor layer disposed on a surface of the substrate base, the semiconductor layer comprising a second dopant type and having an upper surface; and a semiconductor plug assembly comprising a semiconductor plug disposed within the semiconductor layer, the semiconductor plug extending from an upper surface of the semiconductor layer and having a depth at least equal to a thickness of the semiconductor layer, the semiconductor plug having a first boundary, the first boundary formed within the semiconductor layer, and having a second boundary, the second boundary formed within the semiconductor layer and disposed opposite the first boundary, wherein the first boundary and second boundary extend perpendicularly to the surface of the substrate base.
    Type: Grant
    Filed: November 17, 2020
    Date of Patent: June 27, 2023
    Assignee: Littelfuse, Inc.
    Inventors: Ader Shen, Ting-Fung Chang, James Lu, Wayne Lin
  • Publication number: 20210091178
    Abstract: A semiconductor device structure may include a substrate having a substrate base comprising a first dopant type; a semiconductor layer disposed on a surface of the substrate base, the semiconductor layer comprising a second dopant type and having an upper surface; and a semiconductor plug assembly comprising a semiconductor plug disposed within the semiconductor layer, the semiconductor plug extending from an upper surface of the semiconductor layer and having a depth at least equal to a thickness of the semiconductor layer, the semiconductor plug having a first boundary, the first boundary formed within the semiconductor layer, and having a second boundary, the second boundary formed within the semiconductor layer and disposed opposite the first boundary, wherein the first boundary and second boundary extend perpendicularly to the surface of the substrate base.
    Type: Application
    Filed: November 17, 2020
    Publication date: March 25, 2021
    Applicant: Littelfuse, Inc.
    Inventors: Ader Shen, Ting-Fung Chang, James Lu, Wayne Lin
  • Patent number: 10943975
    Abstract: A semiconductor device structure may include a substrate having a substrate base comprising a first dopant type; a semiconductor layer disposed on a surface of the substrate base, the semiconductor layer comprising a second dopant type and having an upper surface; and a semiconductor plug assembly comprising a semiconductor plug disposed within the semiconductor layer, the semiconductor plug extending from an upper surface of the semiconductor layer and having a depth at least equal to a thickness of the semiconductor layer, the semiconductor plug having a first boundary, the first boundary formed within the semiconductor layer, and having a second boundary, the second boundary formed within the semiconductor layer and disposed opposite the first boundary, wherein the first boundary and second boundary extend perpendicularly to the surface of the substrate base.
    Type: Grant
    Filed: June 28, 2019
    Date of Patent: March 9, 2021
    Assignee: Littelfuse, Inc.
    Inventors: Ader Shen, Ting-Fung Chang, James Lu, Wayne Lin
  • Publication number: 20200119173
    Abstract: A power switching device may include a semiconductor substrate and a body region comprising an n-type dopant, the body region disposed in an inner portion of the semiconductor substrate; a first base layer disposed adjacent a first surface of the semiconductor substrate, the first p-base layer comprising a p-type dopant; a second base layer disposed adjacent a second surface of the semiconductor substrate, the second base layer comprising a p-type dopant; a first emitter region, disposed adjacent the first surface of the semiconductor substrate, the first emitter region comprising a n-type dopant; a second emitter-region, disposed adjacent the second surface of the semiconductor substrate, the second emitter-region comprising a n-type dopant; a first field stop layer arranged between the first base layer and the body region, the first field stop layer comprising a n-type dopant; and a second field stop layer arranged between the second base layer and the body region, the second field stop layer comprising a n
    Type: Application
    Filed: April 24, 2017
    Publication date: April 16, 2020
    Applicant: Littelfuse Semiconductor (Wuxi) Co., Ltd.
    Inventors: Ader Shen, Huan Zhang, Dongliang Li, Jifeng Zhou
  • Publication number: 20190326390
    Abstract: A semiconductor device structure may include a substrate having a substrate base comprising a first dopant type; a semiconductor layer disposed on a surface of the substrate base, the semiconductor layer comprising a second dopant type and having an upper surface; and a semiconductor plug assembly comprising a semiconductor plug disposed within the semiconductor layer, the semiconductor plug extending from an upper surface of the semiconductor layer and having a depth at least equal to a thickness of the semiconductor layer, the semiconductor plug having a first boundary, the first boundary formed within the semiconductor layer, and having a second boundary, the second boundary formed within the semiconductor layer and disposed opposite the first boundary, wherein the first boundary and second boundary extend perpendicularly to the surface of the substrate base.
    Type: Application
    Filed: June 28, 2019
    Publication date: October 24, 2019
    Applicant: Littelfuse, Inc.
    Inventors: Ader Shen, Ting-Fung Chang, James Lu, Wayne Lin
  • Patent number: 10074642
    Abstract: A circuit protection component including a crowbar device for protecting electronic devices from transients is generally disclosed. The circuit protection component may include a steering diode bridge and a crowbar device electrically connected to the steering diode bridge. The crowbar device may have a base and an emitter formed on a first layer, the first layer defining a breakdown voltage, which when exceeded allows current to pass under the emitter and out the device through a hole formed in the emitter.
    Type: Grant
    Filed: July 3, 2013
    Date of Patent: September 11, 2018
    Assignee: Littelfuse, Inc.
    Inventors: Ader Shen, Ethan Kuo, Ting-Fung Chang
  • Publication number: 20170373142
    Abstract: A semiconductor device structure may include a substrate having a substrate base comprising a first dopant type; a semiconductor layer disposed on a surface of the substrate base, the semiconductor layer comprising a second dopant type and having an upper surface; and a semiconductor plug assembly comprising a semiconductor plug disposed within the semiconductor layer, the semiconductor plug extending from an upper surface of the semiconductor layer and having a depth at least equal to a thickness of the semiconductor layer, the semiconductor plug having a first boundary, the first boundary formed within the semiconductor layer, and having a second boundary, the second boundary formed within the semiconductor layer and disposed opposite the first boundary, wherein the first boundary and second boundary extend perpendicularly to the surface of the substrate base.
    Type: Application
    Filed: June 23, 2016
    Publication date: December 28, 2017
    Applicant: Littelfuse, Inc.
    Inventors: Ader Shen, Ting-Fung Chang, James Lu, Wayne Lin
  • Publication number: 20150116873
    Abstract: A circuit protection component including a crowbar device for protecting electronic devices from transients is generally disclosed. The circuit protection component may include a steering diode bridge and a crowbar device electrically connected to the steering diode bridge. The crowbar device may have a base and an emitter formed on a first layer, the first layer defining a breakdown voltage, which when exceeded allows current to pass under the emitter and out the device through a hole formed in the emitter.
    Type: Application
    Filed: July 3, 2013
    Publication date: April 30, 2015
    Applicant: LITTELFUSE, INC.
    Inventors: Ader Shen, Ethan Kuo, Ting-Fung Cchang