Patents by Inventor Ader Shen
Ader Shen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11688763Abstract: A semiconductor device structure may include a substrate having a substrate base comprising a first dopant type; a semiconductor layer disposed on a surface of the substrate base, the semiconductor layer comprising a second dopant type and having an upper surface; and a semiconductor plug assembly comprising a semiconductor plug disposed within the semiconductor layer, the semiconductor plug extending from an upper surface of the semiconductor layer and having a depth at least equal to a thickness of the semiconductor layer, the semiconductor plug having a first boundary, the first boundary formed within the semiconductor layer, and having a second boundary, the second boundary formed within the semiconductor layer and disposed opposite the first boundary, wherein the first boundary and second boundary extend perpendicularly to the surface of the substrate base.Type: GrantFiled: November 17, 2020Date of Patent: June 27, 2023Assignee: Littelfuse, Inc.Inventors: Ader Shen, Ting-Fung Chang, James Lu, Wayne Lin
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Publication number: 20210091178Abstract: A semiconductor device structure may include a substrate having a substrate base comprising a first dopant type; a semiconductor layer disposed on a surface of the substrate base, the semiconductor layer comprising a second dopant type and having an upper surface; and a semiconductor plug assembly comprising a semiconductor plug disposed within the semiconductor layer, the semiconductor plug extending from an upper surface of the semiconductor layer and having a depth at least equal to a thickness of the semiconductor layer, the semiconductor plug having a first boundary, the first boundary formed within the semiconductor layer, and having a second boundary, the second boundary formed within the semiconductor layer and disposed opposite the first boundary, wherein the first boundary and second boundary extend perpendicularly to the surface of the substrate base.Type: ApplicationFiled: November 17, 2020Publication date: March 25, 2021Applicant: Littelfuse, Inc.Inventors: Ader Shen, Ting-Fung Chang, James Lu, Wayne Lin
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Patent number: 10943975Abstract: A semiconductor device structure may include a substrate having a substrate base comprising a first dopant type; a semiconductor layer disposed on a surface of the substrate base, the semiconductor layer comprising a second dopant type and having an upper surface; and a semiconductor plug assembly comprising a semiconductor plug disposed within the semiconductor layer, the semiconductor plug extending from an upper surface of the semiconductor layer and having a depth at least equal to a thickness of the semiconductor layer, the semiconductor plug having a first boundary, the first boundary formed within the semiconductor layer, and having a second boundary, the second boundary formed within the semiconductor layer and disposed opposite the first boundary, wherein the first boundary and second boundary extend perpendicularly to the surface of the substrate base.Type: GrantFiled: June 28, 2019Date of Patent: March 9, 2021Assignee: Littelfuse, Inc.Inventors: Ader Shen, Ting-Fung Chang, James Lu, Wayne Lin
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Publication number: 20200119173Abstract: A power switching device may include a semiconductor substrate and a body region comprising an n-type dopant, the body region disposed in an inner portion of the semiconductor substrate; a first base layer disposed adjacent a first surface of the semiconductor substrate, the first p-base layer comprising a p-type dopant; a second base layer disposed adjacent a second surface of the semiconductor substrate, the second base layer comprising a p-type dopant; a first emitter region, disposed adjacent the first surface of the semiconductor substrate, the first emitter region comprising a n-type dopant; a second emitter-region, disposed adjacent the second surface of the semiconductor substrate, the second emitter-region comprising a n-type dopant; a first field stop layer arranged between the first base layer and the body region, the first field stop layer comprising a n-type dopant; and a second field stop layer arranged between the second base layer and the body region, the second field stop layer comprising a nType: ApplicationFiled: April 24, 2017Publication date: April 16, 2020Applicant: Littelfuse Semiconductor (Wuxi) Co., Ltd.Inventors: Ader Shen, Huan Zhang, Dongliang Li, Jifeng Zhou
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Publication number: 20190326390Abstract: A semiconductor device structure may include a substrate having a substrate base comprising a first dopant type; a semiconductor layer disposed on a surface of the substrate base, the semiconductor layer comprising a second dopant type and having an upper surface; and a semiconductor plug assembly comprising a semiconductor plug disposed within the semiconductor layer, the semiconductor plug extending from an upper surface of the semiconductor layer and having a depth at least equal to a thickness of the semiconductor layer, the semiconductor plug having a first boundary, the first boundary formed within the semiconductor layer, and having a second boundary, the second boundary formed within the semiconductor layer and disposed opposite the first boundary, wherein the first boundary and second boundary extend perpendicularly to the surface of the substrate base.Type: ApplicationFiled: June 28, 2019Publication date: October 24, 2019Applicant: Littelfuse, Inc.Inventors: Ader Shen, Ting-Fung Chang, James Lu, Wayne Lin
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Patent number: 10074642Abstract: A circuit protection component including a crowbar device for protecting electronic devices from transients is generally disclosed. The circuit protection component may include a steering diode bridge and a crowbar device electrically connected to the steering diode bridge. The crowbar device may have a base and an emitter formed on a first layer, the first layer defining a breakdown voltage, which when exceeded allows current to pass under the emitter and out the device through a hole formed in the emitter.Type: GrantFiled: July 3, 2013Date of Patent: September 11, 2018Assignee: Littelfuse, Inc.Inventors: Ader Shen, Ethan Kuo, Ting-Fung Chang
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Publication number: 20170373142Abstract: A semiconductor device structure may include a substrate having a substrate base comprising a first dopant type; a semiconductor layer disposed on a surface of the substrate base, the semiconductor layer comprising a second dopant type and having an upper surface; and a semiconductor plug assembly comprising a semiconductor plug disposed within the semiconductor layer, the semiconductor plug extending from an upper surface of the semiconductor layer and having a depth at least equal to a thickness of the semiconductor layer, the semiconductor plug having a first boundary, the first boundary formed within the semiconductor layer, and having a second boundary, the second boundary formed within the semiconductor layer and disposed opposite the first boundary, wherein the first boundary and second boundary extend perpendicularly to the surface of the substrate base.Type: ApplicationFiled: June 23, 2016Publication date: December 28, 2017Applicant: Littelfuse, Inc.Inventors: Ader Shen, Ting-Fung Chang, James Lu, Wayne Lin
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Publication number: 20150116873Abstract: A circuit protection component including a crowbar device for protecting electronic devices from transients is generally disclosed. The circuit protection component may include a steering diode bridge and a crowbar device electrically connected to the steering diode bridge. The crowbar device may have a base and an emitter formed on a first layer, the first layer defining a breakdown voltage, which when exceeded allows current to pass under the emitter and out the device through a hole formed in the emitter.Type: ApplicationFiled: July 3, 2013Publication date: April 30, 2015Applicant: LITTELFUSE, INC.Inventors: Ader Shen, Ethan Kuo, Ting-Fung Cchang