Abstract: The present disclosure generally relates to a pin-less substrate transfer apparatus and method for a processing chamber. The processing chamber includes a pedestal. The pedestal includes a pedestal plate. The pedestal plate has a radius, a top surface, and a bottom surface. The pedestal plate further includes a plurality of cut outs on a perimeter of the pedestal plate. Flat edges are disposed on opposite sides of the pedestal plate. Recesses are disposed in the bottom surface below each of the flat edges.

Abstract: Embodiments of the disclosure relate to an apparatus and method for processing semiconductor substrates. In one embodiment, a processing system is disclosed. The processing system includes an outer chamber that surrounds an inner chamber. The inner chamber includes a substrate support upon which a substrate is positioned during processing. The inner chamber is configured to have an internal volume that, when isolated from an internal volume of the outer chamber, is changeable such that the pressure within the internal volume of the inner chamber may be varied.

Abstract: The present disclosure relates to high pressure processing apparatus for semiconductor processing. The apparatus described herein include a high pressure process chamber and a containment chamber surrounding the process chamber. A high pressure fluid delivery module is in fluid communication with the high pressure process chamber and is configured to deliver a high pressure fluid to the process chamber.

Abstract: The present disclosure generally relates to a pin-less substrate transfer apparatus and method for a processing chamber. The processing chamber includes a pedestal. The pedestal includes a pedestal plate. The pedestal plate has a radius, a top surface, and a bottom surface. The pedestal plate further includes a plurality of cut outs on a perimeter of the pedestal plate. Flat edges are disposed on opposite sides of the pedestal plate. Recesses are disposed in the bottom surface below each of the flat edges.

Abstract: The present disclosure relates to high pressure processing apparatus for semiconductor processing. The apparatus described herein include a high pressure process chamber and a containment chamber surrounding the process chamber. A high pressure fluid delivery module is in fluid communication with the high pressure process chamber and is configured to deliver a high pressure fluid to the process chamber.

Abstract: The present disclosure relates to high pressure processing apparatus for semiconductor processing. The apparatus described herein include a high pressure process chamber and a containment chamber surrounding the process chamber. A high pressure fluid delivery module is in fluid communication with the high pressure process chamber and is configured to deliver a high pressure fluid to the process chamber.

Abstract: Embodiments of the disclosure relate to an apparatus and method for processing semiconductor substrates. In one embodiment, a processing system is disclosed. The processing system includes an outer chamber that surrounds an inner chamber. The inner chamber includes a substrate support upon which a substrate is positioned during processing. The inner chamber is configured to have an internal volume that, when isolated from an internal volume of the outer chamber, is changeable such that the pressure within the internal volume of the inner chamber may be varied.

Abstract: Apparatus and methods for gas distribution assemblies are provided. In one aspect, a gas distribution assembly is provided comprising an annular body comprising an annular ring having an inner annular wall, an outer wall, an upper surface, and a bottom surface, an upper recess formed into the upper surface, and a seat formed into the inner annular wall, an upper plate positioned in the upper recess, comprising a disk-shaped body having a plurality of first apertures formed therethrough, and a bottom plate positioned on the seat, comprising a disk-shaped body having a plurality of second apertures formed therethrough which align with the first apertures, and a plurality of third apertures formed between the second apertures and through the bottom plate, the bottom plate sealingly coupled to the upper plate to fluidly isolate the plurality of first and second apertures from the plurality of third apertures.

Abstract: The present disclosure relates to high pressure processing apparatus for semiconductor processing. The apparatus described herein include a high pressure process chamber and a containment chamber surrounding the process chamber. A high pressure fluid delivery module is in fluid communication with the high pressure process chamber and is configured to deliver a high pressure fluid to the process chamber.

Abstract: A high-pressure processing system for processing a substrate includes a first chamber, a pedestal positioned within the first chamber to support the substrate, a second chamber adjacent the first chamber, a vacuum processing system configured to lower a pressure within the second chamber to near vacuum, a valve assembly between the first chamber and the second chamber to isolate the pressure within the first chamber from the pressure within the second chamber, and a gas delivery system configured to introduce a processing gas into the first chamber and to increase the pressure within the first chamber to at least 10 atmospheres while the processing gas is in the first chamber and while the first chamber is isolated from the second chamber.

Abstract: A high-pressure processing system for processing a substrate includes a first chamber, a pedestal positioned within the first chamber to support the substrate, a second chamber adjacent the first chamber, a vacuum processing system configured to lower a pressure within the second chamber to near vacuum, a valve assembly between the first chamber and the second chamber to isolate the pressure within the first chamber from the pressure within the second chamber, and a gas delivery system configured to introduce a processing gas into the first chamber and to increase the pressure within the first chamber to at least 10 atmospheres while the processing gas is in the first chamber and while the first chamber is isolated from the second chamber.

Abstract: A plasma reactor for processing a workpiece includes a chamber having a dielectric window, a workpiece support to hold a workpiece in the chamber, a rotary coupling comprising a stationary stage configured to be coupled to a microwave source and a rotatable stage having an axis of rotation, a microwave antenna and overlying the dielectric window of the chamber, a rotary actuator to rotate the microwave antenna, and a process gas distributor including a gas distribution ring surrounding the workpiece support. The microwave antenna includes at least one conduit coupled to the rotary stage. The gas distribution ring including a cylindrical chamber liner separating a circular conduit from the chamber and a plurality of apertures extending radially through the liner to connect the conduit to the chamber.

Abstract: A high-pressure processing system includes a first chamber, a second chamber adjacent the first chamber, a foreline to remove gas from the second chamber, a vacuum processing system configured to lower a pressure within the second, a valve assembly to isolate the pressure within the first chamber from the pressure within the second chamber, a gas delivery system configured to introduce a gas into the first chamber and to increase the pressure within the first chamber to at least 10 atmospheres, an exhaust line to remove gas from the first chamber, and a containment enclosure surrounding a portion of the gas delivery system and the exhaust line to divert gas leaking from the portion of the gas delivery system and the exhaust line to the foreline.

Abstract: A high-pressure processing system includes a first chamber, a second chamber adjacent the first chamber, a foreline to remove gas from the second chamber, a vacuum processing system configured to lower a pressure within the second, a valve assembly to isolate the pressure within the first chamber from the pressure within the second chamber, a gas delivery system configured to introduce a gas into the first chamber and to increase the pressure within the first chamber to at least 10 atmospheres, an exhaust line to remove gas from the first chamber, and a containment enclosure surrounding a portion of the gas delivery system and the exhaust line to divert gas leaking from the portion of the gas delivery system and the exhaust line to the foreline.

Abstract: A high-pressure processing system for processing a substrate includes a first chamber, a pedestal positioned within the first chamber to support the substrate, a second chamber adjacent the first chamber, a vacuum processing system configured to lower a pressure within the second chamber to near vacuum, a valve assembly between the first chamber and the second chamber to isolate the pressure within the first chamber from the pressure within the second chamber, and a gas delivery system configured to introduce a processing gas into the first chamber and to increase the pressure within the first chamber to at least 10 atmospheres while the processing gas is in the first chamber and while the first chamber is isolated from the second chamber.