Patents by Inventor Aditi D. Banerjee

Aditi D. Banerjee has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 6204198
    Abstract: An embodiment of the instant invention is a method of fabricating an electronic device over a semiconductor substrate, the method comprising the steps of: forming a doped polycrystalline silicon layer insulatively disposed over the semiconductor substrate; and subjecting the doped polycrystalline silicon layer to a temperature of around 700 to 1100 C. in an oxidizing ambient for a period of around 5 to 120 seconds. Preferably, the oxidizing ambient is comprised of: O2,O3, NO, N2O, H2O, and any combination thereof. The temperature is, preferably, around 950 to 1050 C. (more preferably around 1000 C.). The step of subjecting the doped polycrystalline silicon layer to a temperature of around 700 to 1100 C. in an oxidizing ambient for a period of around 5 to 120 seconds, preferably, forms an oxide layer on the polycrystalline silicon layer, which has a thickness which is, preferably, greater than the thickness of a native oxide layer.
    Type: Grant
    Filed: November 22, 1999
    Date of Patent: March 20, 2001
    Assignee: Texas Instruments Incorporated
    Inventors: Aditi D. Banerjee, Douglas E. Mercer, Rick L. Wise
  • Patent number: 6197653
    Abstract: A rugged polysilicon electrode for a capacitor has high surface area enhancement with a thin layer by high nucleation density plus gas phase doping which also enhances grain shape and oxygen-free dielectric formation.
    Type: Grant
    Filed: March 27, 1998
    Date of Patent: March 6, 2001
    Assignee: Texas Instruments Incorporated
    Inventors: Rajesh B. Khamankar, Darius L. Crenshaw, Rick L. Wise, Katherine Violette, Aditi D. Banerjee