Patents by Inventor Aditya Chaudhury

Aditya Chaudhury has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • SEMICONDUCTOR PROCESSING PRECLEAN METHODS AND APPARATUS
    Publication number: 20240429038
    Abstract: In some embodiments, a method for semiconductor processing preclean includes removing an oxide layer from a substrate using anhydrous hydrogen fluoride in combination with water vapor. A system for the preclean may be configured to separate the anhydrous hydrogen fluoride and the water vapor until they are delivered to a common volume near the substrate. Corrosion within components of the system may be limited by purification of anhydrous hydrogen fluoride, passivation of components, changing component materials, and heating components. Passivation may be achieved by filling a gas delivery component with anhydrous hydrogen fluoride and allowing the anhydrous hydrogen fluoride to remain in the gas delivery component to form a passivation layer. Consistent water vapor delivery may be achieved in part by heating components using heaters.
    Type: Application
    Filed: September 6, 2024
    Publication date: December 26, 2024
    Inventors: Chuang Wei, Aditya Chaudhury, Prahlad Kulkarni, Xing Lin, Xiaoda Sun, Woo Jung Shin, Bubesh Babu Jotheeswaran, Fei Wang, Qu Jin, Aditya Walimbe, Rajeev Reddy Kosireddy, Yen Chun Fu, Amin Azimi
  • Semiconductor processing preclean methods and apparatus
    Patent number: 12112938
    Abstract: In some embodiments, a method for semiconductor processing preclean includes removing an oxide layer from a substrate using anhydrous hydrogen fluoride in combination with water vapor. A system for the preclean may be configured to separate the anhydrous hydrogen fluoride and the water vapor until they are delivered to a common volume near the substrate. Corrosion within components of the system may be limited by purification of anhydrous hydrogen fluoride, passivation of components, changing component materials, and heating components. Passivation may be achieved by filling a gas delivery component with anhydrous hydrogen fluoride and allowing the anhydrous hydrogen fluoride to remain in the gas delivery component to form a passivation layer. Consistent water vapor delivery may be achieved in part by heating components using heaters.
    Type: Grant
    Filed: March 17, 2022
    Date of Patent: October 8, 2024
    Assignee: ASM IP Holding B.V.
    Inventors: Chuang Wei, Aditya Chaudhury, Prahlad Kulkarni, Xing Lin, Xiaoda Sun, Woo Jung Shin, Bubesh Babu Jotheeswaran, Fei Wang, Qu Jin, Aditya Walimbe, Rajeev Reddy Kosireddy, Yen Chun Fu, Amin Azimi
  • SEMICONDUCTOR PROCESSING PRECLEAN METHODS AND APPARATUS
    Publication number: 20220301856
    Abstract: In some embodiments, a method for semiconductor processing preclean includes removing an oxide layer from a substrate using anhydrous hydrogen fluoride in combination with water vapor. A system for the preclean may be configured to separate the anhydrous hydrogen fluoride and the water vapor until they are delivered to a common volume near the substrate. Corrosion within components of the system may be limited by purification of anhydrous hydrogen fluoride, passivation of components, changing component materials, and heating components. Passivation may be achieved by filling a gas delivery component with anhydrous hydrogen fluoride and allowing the anhydrous hydrogen fluoride to remain in the gas delivery component to form a passivation layer. Consistent water vapor delivery may be achieved in part by heating components using heaters.
    Type: Application
    Filed: March 17, 2022
    Publication date: September 22, 2022
    Inventors: Chuang Wei, Aditya Chaudhury, Prahlad Kulkarni, Xing Lin, Xiaoda Sun, Woo Jung Shin, Bubesh Babu Jotheeswaran, Fei Wang, Qu Jin, Aditya Walimbe, Rajeev Reddy Kosireddy, Yen Chun Fu, Amin Azimi