Abstract: Vapor deposition processing chamber temperature control apparatus and vapor deposition processing chambers incorporating the temperature control apparatus are described. The temperature control apparatus has a base plate with a plurality of reflectors arranged in at least two annular zones, each annular zone separated into at least two sector zones. The reflectors are configured to decrease a specific side-to-side temperature non-uniformity profile of a heated substrate support positioned above the base plate in the vapor deposition processing chamber.

Abstract: Apparatuses and methods for loading and unloading substrates from a semiconductor manufacturing processing chamber are described. Some embodiments advantageously provide improved lift assemblies (e.g., lift ring designs) for centering lift pins in semiconductor processing chambers by allowing for unconstrained translation of the lift pins in the x-y plane. Some embodiments advantageously prevent lift pin tilting. Some embodiments advantageously provide a seal between the top end portion of the lift pins and the openings in the top surface. The lift assemblies include a ring-shaped body, a plurality of movable blocks configured to cooperatively interact with one or more openings of the ring-shaped body, and at least one ball bearing. The movable blocks include at least one indentation in a top surface of a bottom portion of the block and a complementary sized ball bearing in the at least one indentation.

Abstract: Sealing bodies comprising a first body having a top surface and a bottom surface defining a thickness thereof. An inlet conduit and an outlet conduit are in fluid communication with one or more of the top surface, the bottom surface, or a top channel formed in the top surface or a bottom channel formed in the bottom surface.