Abstract: Sealing bodies comprising a first body having a top surface and a bottom surface defining a thickness thereof. An inlet conduit and an outlet conduit are in fluid communication with one or more of the top surface, the bottom surface, or a top channel formed in the top surface or a bottom channel formed in the bottom surface.

Abstract: Apparatuses and methods for loading and unloading substrates from a semiconductor manufacturing processing chamber are described. Some embodiments advantageously provide improved lift assemblies (e.g., lift ring designs) for centering lift pins in semiconductor processing chambers by allowing for unconstrained translation of the lift pins in the x-y plane. Some embodiments advantageously prevent lift pin tilting. Some embodiments advantageously provide a seal between the top end portion of the lift pins and the openings in the top surface. The lift assemblies include a ring-shaped body, a plurality of movable blocks configured to cooperatively interact with one or more openings of the ring-shaped body, and at least one ball bearing. The movable blocks include at least one indentation in a top surface of a bottom portion of the block and a complementary sized ball bearing in the at least one indentation.

Abstract: Gas distribution inserts configured to deliver a gas in semiconductor manufacturing processing chambers are described. The gas distribution insert comprises a plurality of randomly oriented gas openings extending through the thickness of the inlet end wall. An inner gas channel extends from the outlet end wall face to the insert outlet end, and the inner gas channel is bounded by an inner gas channel sidewall. The gas distribution inserts include at least two gas inlets extending through the inner gas channel sidewall.

Abstract: Substrate processing chamber gas distribution assemblies and methods utilizing of processing substrates using the same are described. The gas distribution assembly includes an edge ring having a lower surface configured to be supported on a substrate processing chamber pedestal and an upper surface, the lower surface and the upper surface defining an edge ring thickness, the substrate processing chamber edge ring having a first edge ring thickness at a first edge of the ring-shaped body that is greater than a second edge ring thickness at a second edge opposite the first edge of the substrate processing chamber edge ring.

Abstract: A processing system for semiconductor manufacturing includes a chamber housing and a substrate support disposed in the chamber housing. The system also includes a lift pin coupled to the substrate support and a ring for actuating the lift pin. The ring is movable between a raised position and a lowered position. An expandable filler is disposed in the chamber housing. The expandable filler has an expanded configuration when the ring is in the raised position and has a contracted configuration when the ring is in the lowered position.

Abstract: Semiconductor manufacturing processing chambers with ultrasonic transducers connected to ultrasonic conductor rods and methods of use are described. A vibrating web or membrane connected to the ultrasonic conductor rod transfers ultrasonic vibrations generated by the ultrasonic transducer into a gas in a gas box plenum or in the gas inlet to create perturbations in the process gas.

Abstract: Processing chamber exhaust systems and methods of controlling pressure within a processing chamber. The processing chamber exhaust systems includes a throttle valve disposed along an exhaust line extending from the processing chamber, a check valve upstream the throttle valve, and a purge line with a purge valve for supplying an inert gas to the exhaust line downstream the check valve and upstream the throttle valve. Methods of controlling pressure within the processing chamber comprise opening the throttle valve to varying extents and controlling the purge valve to control flow of inert gas to adjust pressure within the processing chamber.

Abstract: Vapor deposition processing chamber temperature control apparatus and vapor deposition processing chambers incorporating the temperature control apparatus are described. The temperature control apparatus has a base plate with a plurality of reflectors arranged in at least two annular zones, each annular zone separated into at least two sector zones. The reflectors are configured to decrease a specific side-to-side temperature non-uniformity profile of a heated substrate support positioned above the base plate in the vapor deposition processing chamber.

Abstract: Apparatuses and methods for loading and unloading substrates from a semiconductor manufacturing processing chamber are described. Some embodiments advantageously provide improved lift assemblies (e.g., lift ring designs) for centering lift pins in semiconductor processing chambers by allowing for unconstrained translation of the lift pins in the x-y plane. Some embodiments advantageously prevent lift pin tilting. Some embodiments advantageously provide a seal between the top end portion of the lift pins and the openings in the top surface. The lift assemblies include a ring-shaped body, a plurality of movable blocks configured to cooperatively interact with one or more openings of the ring-shaped body, and at least one ball bearing. The movable blocks include at least one indentation in a top surface of a bottom portion of the block and a complementary sized ball bearing in the at least one indentation.

Abstract: Sealing bodies comprising a first body having a top surface and a bottom surface defining a thickness thereof. An inlet conduit and an outlet conduit are in fluid communication with one or more of the top surface, the bottom surface, or a top channel formed in the top surface or a bottom channel formed in the bottom surface.