Patents by Inventor Aditya Verma

Aditya Verma has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20150209644
    Abstract: A tennis training apparatus suspends a tennis ball in the air to allow a player to practice striking the ball with a tennis racquet. The apparatus includes a tennis ball with a first magnetic element integrally and non-removably coupled to the tennis ball. The tennis ball includes an outer layer, an inner core and an intermediate layer positioned between the outer layer and the inner core. A panel is provided. A magnet is coupled to the panel. The first magnetic element of the tennis ball is positionable adjacent to and magnetically attractable to the magnet wherein the tennis ball is releasably couplable to the magnet. A support assembly is coupled to the panel. The support assembly is configured to support the panel above a ground surface.
    Type: Application
    Filed: January 30, 2014
    Publication date: July 30, 2015
    Inventor: Aditya Verma
  • Patent number: 8721926
    Abstract: A single-source solid precursor matrix for semiconductor nanocrystals includes 45-55% by weight of zinc, 28-35% by weight of oxygen, 0.70-1.2% by weight of carbon, 1.5-2.5% by weight of hydrogen, 4-6% by weight of nitrogen, 5-7% by weight of sulphur and 1-5% by weight of dopant ions with respect to the weight of zinc atoms. Doped semiconductor nanocrystals for multicolor displays and bio markers include 60-65% by weight of zinc, 30-32% by weight of sulphur, 1.2-1.3% by weight of copper and 1.2-1.3% by weight of dopant ions.
    Type: Grant
    Filed: September 14, 2012
    Date of Patent: May 13, 2014
    Assignee: The Director General Defence Research & Development Organisation
    Inventors: Manzoor Koyakutty, Aditya Verma, Sampat Raj Vedera, Narendra Kumar, Thundyil Raman Narayana Kutty
  • Publication number: 20130082216
    Abstract: A single-source solid precursor matrix for semiconductor nanocrystals includes 45-55% by weight of zinc, 28-35% by weight of oxygen, 0.70-1.2% by weight of carbon, 1.5-2.5% by weight of hydrogen, 4-6% by weight of nitrogen, 5-7% by weight of sulphur and 1-5% by weight of dopant ions with respect to the weight of zinc atoms. Doped semiconductor nanocrystals for multicolor displays and bio markers include 60-65% by weight of zinc, 30-32% by weight of sulphur, 1.2-1.3% by weight of copper and 1.2-1.3% by weight of dopant ions.
    Type: Application
    Filed: September 14, 2012
    Publication date: April 4, 2013
    Applicant: The Director General Defence Research & Development Organisation
    Inventors: Manzoor Koyakutty, Aditya Verma, Sampat Raj Vedera, Narendra Kumar, Thundyil Raman Narayana Kutty
  • Patent number: 8287951
    Abstract: A process for preparing a single source solid precursor matrix for semiconductor nanocrystals having the steps of: mixing 0.1-1 Molar of an aqueous/non-aqueous (organic) solution containing the first component of the host matrix with 0.001-0.01 Molar of an aqueous/non-aqueous solution containing the first dopant ions, which needs in situ modification of valency state, dissolving 10-20 milligram of an inorganic salt for the in situ reduction of the first dopant ion in the solution, addition of 0.001-0.01 Molar of an aqueous/non-aqueous solution of an inorganic salt containing the dopant ions which do not need modifications of their valency state, addition of 0.1-1 Molar of an aqueous/non-aqueous solution of an inorganic salt containing the second component of the host material, addition of 5-10% by weight of an aqueous solution containing a pH modifying complexing agent, to obtain a mixture, and heating the mixture to obtain a solid layered micro-structural precursor compound.
    Type: Grant
    Filed: June 27, 2006
    Date of Patent: October 16, 2012
    Assignee: The Director General Defence Research & Development Organisation
    Inventors: Manzoor Koyakutty, Aditya Verma, Sampat Raj Vedera, Narendra Kumar, Thundyil Raman Narayana Kutty
  • Publication number: 20090218550
    Abstract: A process for preparing a single source solid precursor matrix for semiconductor nanocrystals having the steps of: mixing 0.1-1 Molar of an aqueous/non-aqueous (organic) solution containing the first component of the host matrix with 0.001-0.01 Molar of an aqueous/non-aqueous solution containing the first dopant ions, which needs in situ modification of valency state, dissolving 10-20 milligram of an inorganic salt for the in situ reduction of the first dopant ion in the solution, addition of 0.001-0.01 Molar of an aqueous/non-aqueous solution of an inorganic salt containing the dopant ions which do not need modifications of their valency state, addition of 0.1-1 Molar of an aqueous/non-aqueous solution of an inorganic salt containing the second component of the host material, addition of 5-10% by weight of an aqueous solution containing a pH modifying complexing agent, to obtain a mixture, and heating the mixture to obtain a solid layered micro-structural precursor compound.
    Type: Application
    Filed: June 27, 2006
    Publication date: September 3, 2009
    Applicant: The Director General Defence Research & Development Organisation
    Inventors: Manzoor Koyakutty, Aditya Verma, Sampat Raj Vedera, Narendra Kumar, Thundyil Raman Narayana Kutty