Patents by Inventor Adnan Kapetanovic

Adnan Kapetanovic has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Inorganic nanostructure reactive direct-write and growth
    Patent number: 9153437
    Abstract: Methods for forming inorganic nanostructures are provided. The methods create the inorganic nanostructures by positioning a writing electrode (e.g., a conductive “stamp”) spaced nanometers above a substrate such that a precursor is intermediate the two. Applying an electric field, a voltage bias, an ionic current, or an electronic current between the writing electrode and the substrate converts the precursor into an inorganic solid material (e.g., a semiconductor such as silicon or germanium) in the area of the writing electrode.
    Type: Grant
    Filed: March 30, 2012
    Date of Patent: October 6, 2015
    Assignee: University of Washington through its Center for Commercialization
    Inventors: Marco Rolandi, Hideki Sato, Stephanie Vasko, Michael Brasino, Adnan Kapetanovic, Vamsi Talla
  • METHODS FOR THE PRODUCTION OF CHITIN NANOFIBERS AND USES THEREOF
    Publication number: 20140194379
    Abstract: Methods for the production chitin nanofibers and uses thereof. Furthermore, methods for the production of chitin nanofibers and the fabrication of chitin nanofiber structures and devices.
    Type: Application
    Filed: June 1, 2012
    Publication date: July 10, 2014
    Applicant: University of Washington Through Its Center For Commercialization
    Inventors: Marco Rolandi, Ronald Berenson, Vittorio Ruvolo, Adnan Kapetanovic, Jungho Jin, Chao Zhong
  • INORGANIC NANOSTRUCTURE REACTIVE DIRECT-WRITE AND GROWTH
    Publication number: 20140162436
    Abstract: Methods for forming inorganic nanostructures are provided. The methods create the inorganic nanostructures by positioning a writing electrode (e.g., a conductive “stamp”) spaced nanometers above a substrate such that a precursor is intermediate the two. Applying an electric field, a voltage bias, an ionic current, or an electronic current between the writing electrode and the substrate converts the precursor into an inorganic solid material (e.g., a semiconductor such as silicon or germanium) in the area of the writing electrode.
    Type: Application
    Filed: March 30, 2012
    Publication date: June 12, 2014
    Applicant: University of Washington Through Its Center for Commercialization
    Inventors: Marco Rolandi, Michael Brasino, Adnan Kapetanovic, Vamsi Talla, Stephanie Vasko, Hideki Sato