Abstract: The object of the invention is the synthesis of threadlike tungsten oxide W5O14, in the presence of nickel at a temperature lower than 1000° C. Represented is a procedure for the synthesis of a highly homogeneous phase of the W5O14 compound from the vapor phase, in the presence of nickel, by means of a chemical transport method in a closed quartz ampoule. As an alternative example, a procedure is represented for the synthesis of the W5O14 compound in a through-flow reaction vessel. Both procedures yield electrically conductive threadlike crystals of the W5O14 compound. The synthesis is performed in vapor phase. Tungsten enters the reaction as a pure phase or via WS2±x, x?4, previously synthesized from the elements, and/or the source of tungsten may also be tungsten oxides WO3?Y, 0?y?1. Nickel may enter the reaction via NiI2, Ni(OH)2 and/or atomic nickel.

Abstract: The object of the invention is the synthesis of threadlike tungsten oxide W5O14, in the presence of nickel at a temperature lower than 1000° C. Represented is a procedure for the synthesis of a highly homogeneous phase of the W5O14 compound from the vapor phase, in the presence of nickel, by means of a chemical transport method in a closed quartz ampoule. As an alternative example, a procedure is represented for the synthesis of the W5O14 compound in a through-flow reaction vessel. Both procedures yield electrically conductive threadlike crystals of the W5O14 compound. The synthesis is performed in vapor phase. Tungsten enters the reaction as a pure phase or via WS2±x, x?0, previously synthesized from the elements, and/or the source of tungsten may also be tungsten oxides WO3?y, 0?y?1. Nickel may enter the reaction via NiI2, Ni(OH)2 and/or atomic nickel.

Abstract: The object of the invention is a process for the synthesis of nanotubes of transition metal dichalcogenides, of fullerene-like nanostructures of transition metal dichalcogenides, of nanotubes of transition metal dichalcogenides, filled with fullerene-like nanostructures of transition metal dichalcogenides, of quasi one-dimensional structures (nanowires, microwires and ribbons) of transition metal oxides and of quasi one-dimensional structures of transition metal dichalcogenides, consisting of fine crystallites of transition metal dichalcogenides. The process is characterized in that the synthesis occurs by the chemical transformation of quasi one-dimensional compounds with a sub-micron diameter, described by the formula M6CyHz, 8.2<y+z?10, where M is a transition metal (Mo, W, Ta, Nb), C is a chalcogen (S, Se, Te), H is a halogen (I).

Abstract: The object of the invention is a process for the synthesis of nanotubes of transition metal dichalcogenides, of fullerene-like nanostructures of transition metal dichalcogenides, of nanotubes of transition metal dichalcogenides, filled with fullerene-like nanostructures of transition metal dichalcogenides, of quasi one-dimensional structures (nanowires, microwires and ribbons) of transition metal oxides and of quasi one-dimensional structures of transition metal dichalcogenides, consisting of fine crystallites of transition metal dichalcogenides. The process is characterized in that the synthesis occurs by the chemical transformation of quasi one-dimensional compounds with a sub-micron diameter, described by the formula M6CyH2, 8.2<y+z<10, where M is a transition metal (Mo, W, Ta, Nb), C is a chalcogen (S, Se, Te), H is a halogen (I).

Abstract: The present Invention relates a quasi-one-dimensional material with sub-micron cross-section described by the formula M6CyHz, where the M=transition metal, C=chalcogen, H=halogen, and where y and z are integers such that 8.2<y+z<10, which materials are synthesized in a Single-step procedure at temperatures above 1000° C. The present invention also concerns the use of these materials in electronic, chemical, optical or mechanical applications.