Patents by Inventor Adolf Muenzer
Adolf Muenzer has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10115851Abstract: Solar cell (11; 21; 31) having a dielectric coating arranged on a back side of the solar cell (11; 21; 31) which is at least partly covered by at least one planar contact (12; 22; 32), a boundary line (14; 24; 34) of the at least one planar contact (12; 22; 32) having at least one recess (16a, 16b; 26a, 26b, 26c), and method for producing same.Type: GrantFiled: October 14, 2011Date of Patent: October 30, 2018Assignees: Centrotherm Photovoltaics AG, RCT Solutions GMBHInventors: Andreas Teppe, Adolf Muenzer, Jan Schoene, Mathias Hein, Peter Winter
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Publication number: 20160133774Abstract: In a method for producing a solar cell, a layer stack of dielectric layers is applied to a back of a solar cell substrate and the layer stack is heated and is held at temperatures of at least 700° C. during a time period of at least 5 minutes. The novel solar cell has a layer stack of dielectric layers on its back. At least one of the dielectric layers of the layer stack is densified so that its resistivity to firing-through of pastes with glass components is enhanced.Type: ApplicationFiled: January 19, 2016Publication date: May 12, 2016Inventors: ADOLF MUENZER, ANDREAS TEPPE, JAN SCHOENE, REINHOLD SCHLOSSER, STEFFEN KELLER
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Patent number: 9276155Abstract: In a method for producing a solar cell, a layer stack of dielectric layers is applied to a back of a solar cell substrate and the layer stack is heated and is held at temperatures of at least 700° C. during a time period of at least 5 minutes. The novel solar cell has a layer stack of dielectric layers on its back. At least one of the dielectric layers of the layer stack is densified so that its resistivity to firing-through of pastes with glass components is enhanced.Type: GrantFiled: March 3, 2011Date of Patent: March 1, 2016Assignee: RCT Solutions GmbHInventors: Adolf Muenzer, Andreas Teppe, Jan Schoene, Reinhold Schlosser, Steffen Keller
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Publication number: 20140051199Abstract: Method for producing a silicon solar cell which is smoothly etched on one side, in which a front side and a rear side of a silicon substrate are etched (10) to form a smooth texture, a dielectric coating is then formed (14, 16) on the rear side of the silicon substrate and the front side of the silicon substrate is subsequently textured (20) by means of a texture etching medium, the dielectric coating formed on the rear side of the silicon substrate being used as an etching mask against the texture etching medium.Type: ApplicationFiled: December 9, 2011Publication date: February 20, 2014Inventors: Adolf Muenzer, Andreas Teppe, Jan Schoene, Mathias Hein, Jens Kruemberg, Sandra Kruemberg
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Publication number: 20130312823Abstract: Solar cell (11; 21; 31) having a dielectric coating arranged on a back side of the solar cell (11; 21; 31) which is at least partly covered by at least one planar contact (12; 22; 32), a boundary line (14; 24; 34) of the at least one planar contact (12; 22; 32) having at least one recess (16a, 16b; 26a, 26b, 26c), and method for producing same.Type: ApplicationFiled: October 14, 2011Publication date: November 28, 2013Inventors: Andreas Teppe, Adolf Muenzer, Jan Schoene, Mathias Hein, Peter Winter
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Publication number: 20130061924Abstract: In a method for producing a solar cell, a layer stack of dielectric layers is applied to a back of a solar cell substrate and the layer stack is heated and is held at temperatures of at least 700° C. during a time period of at least 5 minutes. The novel solar cell has a layer stack of dielectric layers on its back. At least one of the dielectric layers of the layer stack is densified so that its resistivity to firing-through of pastes with glass components is enhanced.Type: ApplicationFiled: March 3, 2011Publication date: March 14, 2013Applicant: CENTROTHERM PHOTOVOLTAICS AGInventors: Adolf Münzer, Andreas Teppe, Jan Schöne, Reinhold Schlosser, Steffen Keller
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Publication number: 20130014819Abstract: A method for doping a semiconductor substrate includes heating the semiconductor substrate by irradiation with laser radiation and at the same time diffusing dopant from a dopant source into the semiconductor substrate in heated regions. The semiconductor substrate is heated by the irradiation with laser radiation. A surface portion of the semiconductor substrate that is less than 10% of the total surface of all irradiated regions is melted and recrystallized. There is also provided a solar cell.Type: ApplicationFiled: March 3, 2011Publication date: January 17, 2013Applicant: CENTROTHERM PHOTOVOLTAICS AGInventors: Andreas Teppe, Matthias Geiger, Reinhold Schlosser, Adolf Muenzer, Jan Schoene, Joerg Isenberg, Tino Kuehn, Steffen Keller
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Publication number: 20110214727Abstract: A method for manufacturing a solar cell via a two-stage doping includes the steps of forming an oxide layer, which can be penetrated by a first dopant, on at least one part of the surface of a solar cell substrate, forming an opening in the oxide layer in at least one high-doping region by removing the oxide layer in this high-doping region and diffusing the first dopant into the at least one high-doping region of the solar cell substrate through the opening. The first dopant is diffused into the solar cell substrate through the oxide layer. The diffusing-in through the openings and through the oxide layer takes place at the same time in a common diffusion step and the solar cell substrate is diffused in the common diffusion step in an at least partially hydrophilic state.Type: ApplicationFiled: November 9, 2009Publication date: September 8, 2011Applicant: CENTROTHERM PHOTOVOLTAICS AGInventors: Ainhoa Esturo-Breton, Matthias Geiger, Steffen Keller, Reinhold Schlosser, Catharine Voyer, Johannes Maier, Martin Breselge, Adolf Muenzer, Tobias Friess, Tino Kuehn
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Patent number: 7336376Abstract: A method for measuring pyramid size of pyramids outwardly extending on a textured surface of an object, which method involves emitting from a light source a light beam along a first direction onto a region of the textured surface, measuring an intensity of light received from that region along a second direction, and processing the measured intensity to obtain an average size of pyramids; and a device suitable for measuring pyramid size according to the method.Type: GrantFiled: December 10, 2004Date of Patent: February 26, 2008Assignee: SolarWorld Industries Deutschland GmbHInventor: Adolf Münzer
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Patent number: 7217883Abstract: A solar cell involving a silicon wafer having a basic doping, a light-receiving front side and a backside, which is provided with an interdigital semiconductor pattern, which interdigital semiconductor pattern has a first pattern of at least one first diffusion zone having a first doping and a second pattern of at least one second diffusion zone, separated from the first diffusion zone(s) and having a second doping that differs from the first doping, wherein each second diffusion zone is arranged along the sides of at least one groove extending from the backside into the silicon wafer.Type: GrantFiled: November 26, 2002Date of Patent: May 15, 2007Assignee: Shell Solar GmbHInventor: Adolf Münzer
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Patent number: 7129109Abstract: The invention relates to a method for structuring an oxide layer applied to a substrate material. The aim of he invention is to provide an inexpensive method for structuring such an oxide layer. To this end, a squeegee paste that contains an oxide-etching component is printed on the oxide layer through a pattern stencil after silk screen printing and the printed squeegee paste is removed after a determined dwelling time.Type: GrantFiled: February 1, 2002Date of Patent: October 31, 2006Assignee: Shell Solar GmbHInventors: Adolf Münzer, Reinhold Schlosser
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Patent number: 5620528Abstract: A solar cell has electrical conductors applied on a pattern of electric contacts on a front surface and extending transversely relative thereto with a portion projecting beyond the edge of the solar cell. The formation of the electrical pattern includes at least two elongated portions interconnected by a return portion which extends beyond the one edge. This return portion provides a stiffening suitable for reliable interconnection to an additional solar cell to achieve a connection of two conductors in the projecting region.Type: GrantFiled: September 27, 1995Date of Patent: April 15, 1997Assignees: Siemens Solar GmbH, Siemens Solar Industries International, Inc.Inventors: Reinhart Schade, Gerhard Lehner, Adolf Muenzer, Friedrich-Wilhelm Schulze, Robert Wieting
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Patent number: 5268038Abstract: A simple connection for a solar cell module is composed of a soldered-on, stud-shaped terminal element that is fixed with a retainer element plugged thereover and glued to the back side of the solar module. The projection of the end of the terminal element comprises a connection for a cable.Type: GrantFiled: June 17, 1992Date of Patent: December 7, 1993Assignee: Siemens Solar GmbHInventors: Manfred Riermeier, Gerhard Zinke, Adolf Muenzer
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Patent number: 5169791Abstract: A method for the passivation of crystal defects in polycrystalline or amorphous silicon material using a temperature treatment step in a hydrogen-containing atmosphere the method results in favorable diode properties and favorable passivation properties in amorphous or, respectively, polycrystalline silicon material in a simple manner. Hydrogen-oxygen compounds are reduced at the surface of the silicon material, creating atomic hydrogen that diffuses into the silicon material.Type: GrantFiled: September 20, 1990Date of Patent: December 8, 1992Assignee: Siemens AktiengesellschaftInventor: Adolf Muenzer
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Patent number: 4835006Abstract: A process for the passivation of crystal defects or grain boundaries or internal grain defects or surfaces in an electrically conductive material in a plasma, where the passivation is carried out by the influence of suitable ions on the electrically conductive material to facilitate a shorter process time and lower stress on the electrically conductive material. A high-frequency gas discharge plasma is acted upon by a superimposed d.c. voltage which serves to accelerate the ions, suitable to carry out the passivation, towards the electrically conductive material.Type: GrantFiled: October 13, 1987Date of Patent: May 30, 1989Assignee: Siemens AktiengesellschaftInventors: Heinrich Grasser, Adolf Muenzer