Patents by Inventor Adolfo Anciso

Adolfo Anciso has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Chemical etch solution and technique for imaging a device's shallow junction profile
    Publication number: 20080011717
    Abstract: The present invention provides, in one aspect, a method of imaging a microelectronics device 100. The method comprises cleaning, when contaminants are preset, a sample of a microelectronics device 100 to be imaged with a first solution comprising hydrofluoric acid, an inorganic acid and water, exposing the sample to a second solution comprising hydrofluoric acid, an inorganic acid and an organic acid, wherein the second solution forms a contrast between different regions within the sample, and producing an image of the contrasted sample.
    Type: Application
    Filed: July 23, 2007
    Publication date: January 17, 2008
    Applicant: TEXAS INSTRUMENTS INCORPORATED
    Inventors: Lancy Tsung, Adolfo Anciso, Doug Matheson
  • Chemical etch solution and technique for imaging a device's shallow junction profile
    Patent number: 7262409
    Abstract: The present invention provides, in one aspect, a method of imaging a microelectronics device 100. The method comprises cleaning, when contaminants are preset, a sample of a microelectronics device 100 to be imaged with a first solution comprising hydrofluoric acid, an inorganic acid and water, exposing the sample to a second solution comprising hydrofluoric acid, an inorganic acid and an organic acid, wherein the second solution forms a contrast between different regions within the sample, and producing an image of the contrasted sample.
    Type: Grant
    Filed: January 4, 2005
    Date of Patent: August 28, 2007
    Assignee: Texas Instruments Incorporated
    Inventors: Lancy Y. Tsung, Adolfo Anciso, Doug Matheson
  • Chemical etch solution and technique for imaging a device's shallow junction profile
    Publication number: 20060145073
    Abstract: The present invention provides, in one aspect, a method of imaging a microelectronics device 100. The method comprises cleaning, when contaminants are preset, a sample of a microelectronics device 100 to be imaged with a first solution comprising hydrofluoric acid, an inorganic acid and water, exposing the sample to a second solution comprising hydrofluoric acid, an inorganic acid and an organic acid, wherein the second solution forms a contrast between different regions within the sample, and producing an image of the contrasted sample.
    Type: Application
    Filed: January 4, 2005
    Publication date: July 6, 2006
    Applicant: Texas Instruments, Inc.
    Inventors: Lancy Tsung, Adolfo Anciso, Doug Matheson
  • Site-specific method for large area uniform thickness plan view transmission electron microscopy sample preparation
    Patent number: 6927174
    Abstract: A method for preparing a sample includes separating a portion of substrate from a sample, performing focused ion beam milling, and removing additional sample material using an etchant.
    Type: Grant
    Filed: August 12, 2003
    Date of Patent: August 9, 2005
    Assignee: Texas Instruments Incorporated
    Inventors: Adolfo Anciso, Patrick J. Jones, Richard B. Irwin
  • Mass production of cross-section TEM samples by focused ion beam deposition and anisotropic etching
    Patent number: 6884362
    Abstract: A method of preparing a TEM sample. A focused ion beam is used to deposit a mask on the material to be sampled. Reactive ion etching removes material not protected by the mask, leaving a wall thin enough to be imaged by TEM.
    Type: Grant
    Filed: February 18, 2003
    Date of Patent: April 26, 2005
    Assignee: Texas Instruments Incorporated
    Inventors: Lancy Tsung, Adolfo Anciso
  • Site-specific method for large area uniform thickness plan view transmission electron microscopy sample preparation
    Publication number: 20050037625
    Abstract: A method for preparing a sample includes separating a portion of substrate from a sample, performing focused ion beam milling, and removing additional sample material using an etchant.
    Type: Application
    Filed: August 12, 2003
    Publication date: February 17, 2005
    Inventors: Adolfo Anciso, Patrick Jones, Richard Irwin
  • Mass production of cross-section TEM samples by focused ion beam deposition and anisotropic etching
    Patent number: 6786978
    Abstract: A method of preparing a TEM sample. A focused ion beam is used to deposit a mask on the material to be sampled. Reactive ion etching removes material not protected by the mask, leaving a wall thin enough to be imaged by TEM.
    Type: Grant
    Filed: August 2, 2001
    Date of Patent: September 7, 2004
    Assignee: Texas Instruments Incorporated
    Inventors: Lancy Tsung, Adolfo Anciso
  • Mass production of cross-section TEM samples by focused ion beam deposition and anisotropic etching
    Publication number: 20030150836
    Abstract: A method of preparing a TEM sample. A focused ion beam is used to deposit- a mask on the material to be sampled. Reactive ion etching removes material not protected by the mask, leaving a wall thin enough to be imaged by TEM.
    Type: Application
    Filed: February 18, 2003
    Publication date: August 14, 2003
    Inventors: Lancy Tsung, Adolfo Anciso
  • Mass production of cross-section TEM samples by focused ion beam deposition and anisotropic etching
    Publication number: 20020019137
    Abstract: A method of preparing a TEM sample. A focused ion beam is used to deposit a mask on the material to be sampled. Reactive ion etching removes material not protected by the mask, leaving a wall thin enough to be imaged by TEM.
    Type: Application
    Filed: August 2, 2001
    Publication date: February 14, 2002
    Inventors: Lancy Tsung, Adolfo Anciso