Patents by Inventor Adonis BOGRIS

Adonis BOGRIS has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Device for non-linear signal conversion by four-wave mixing
    Patent number: 9377668
    Abstract: A device for non-linear conversion of first infrared signal into a second infrared signal with a wavelength that is less than that of the first infrared signal by means of four-wave mixing, which includes at least one portion of SiGe arranged on at least one first layer of material with a refractive index which is less than that of silicon, a germanium concentration in the portion of SiGe which varies continuously between a first value and a second value which is greater than the first value, in a direction which is approximately perpendicular to a face of the first layer on which the portion of SiGe is arranged, and in which a summital part of the portion of SiGe where the germanium concentration is equal to the second value is in contact with a gas and/or a material with a refractive index which is less than that of the silicon.
    Type: Grant
    Filed: June 18, 2014
    Date of Patent: June 28, 2016
    Assignee: Commissariat a l'energie atomique et aux energies alternatives
    Inventors: Mickael Brun, Pierre Labeye, Sergio Nicoletti, Adonis Bogris, Alexandros Kapsalis, Dimitris Syvridis
  • DEVICE FOR NON-LINEAR SIGNAL CONVERSION BY FOUR-WAVE MIXING
    Publication number: 20140376854
    Abstract: A device for non-linear conversion of first infrared signal into a second infrared signal with a wavelength that is less than that of the first infrared signal by means of four-wave mixing, which includes at least one portion of SiGe arranged on at least one first layer of material with a refractive index which is less than that of silicon, a germanium concentration in the portion of SiGe which varies continuously between a first value and a second value which is greater than the first value, in a direction which is approximately perpendicular to a face of the first layer on which the portion of SiGe is arranged, and in which a summital part of the portion of SiGe where the germanium concentration is equal to the second value is in contact with a gas and/or a material with a refractive index which is less than that of the silicon.
    Type: Application
    Filed: June 18, 2014
    Publication date: December 25, 2014
    Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENE ALT
    Inventors: Mickael BRUN, Pierre LABEYE, Sergio NICOLETTI, Adonis BOGRIS, Alexandros KAPSALIS, Dimitri SYVRIDIS