Abstract: In an embodiment a method for producing a semiconductor body includes providing an auxiliary carrier, depositing a layer sequence on the auxiliary carrier having a first layer including a doped semiconductor material and a second layer including an undoped semiconductor material on the first layer, performing an electrochemical porosification of the first layer, wherein a degree of porosity is at least 20% by volume, forming a functional semiconductor body on the second layer and detaching the semiconductor body from the auxiliary carrier.

Abstract: In an embodiment a method for manufacturing a semiconductor body includes providing an subcarrier, generating a layer sequence with a first layer having a doped semiconductor material and a second layer deposited thereon, the second layer having an undoped semiconductor material, providing an electrochemical porosification of the first layer, wherein a degree of porosity is at least 20% by volume, forming mesa structures in the second layer and at least partially in the porous first layer and epitaxially producing a functional layer sequence having at least one planar third layer which is applied to the second layer comprising the mesa structures, wherein the at least one planar third layer has a specific lattice constant which is different from a lattice constant of the second layer.

Abstract: An optoelectronic semiconductor chip, based on a nitride material system, comprising at least one active quantum well, wherein during operation electromagnetic radiation is generated in the active quantum well, the active quantum well comprises N successive zones in a direction parallel to a growth direction z of the semiconductor chip, N being a natural number greater than or equal to 2, the zones are numbered consecutively in a direction parallel to the growth direction z, at least two of the zones have average aluminium contents k which differ from one another, and the active quantum well fulfils the condition: 50??(35?k(z))dz?2.5N?1.5?dz?120.

Abstract: An optoelectronic semiconductor chip comprises the following sequence of regions in a growth direction (c) of the semiconductor chip (20): a p doped barrier layer (1) for an active region (2), the active region (2), which is suitable for generating electromagnetic radiation, the active region being based on a hexagonal compound semiconductor, and an n doped barrier layer (3) for the active region (2). Also disclosed are a component comprising such a semiconductor chip, and to a method for producing such a semiconductor chip.

Abstract: An optoelectronic semiconductor chip, based on a nitride material system, comprising at least one active quantum well, wherein during operation electromagnetic radiation is generated in the active quantum well, the active quantum well comprises N successive zones in a direction parallel to a growth direction z of the semiconductor chip, N being a natural number greater than or equal to 2, the zones are numbered consecutively in a direction parallel to the growth direction z, at least two of the zones have average aluminium contents k which differ from one another, and the active quantum well fulfils the condition: 50??(35?k(z))dz?2.5N?1.5?dz?120.

Abstract: In at least one embodiment of the optoelectronic semiconductor chip (1), the latter is based on a nitride material system and comprises at least one active quantum well (2). The at least one active quantum well (2) is designed to generate electromagnetic radiation when in operation. Furthermore, the at least one active quantum well (2) comprises N successive zones (A) in a direction parallel to a growth direction z of the semiconductor chip (1), N being a natural number greater than or equal to 2. At least two of the zones (A) of the active quantum well (2) have mutually different average indium contents c. Furthermore the at least one active quantum well (2) fulfills the condition: 40??c(z)dz?2.5N?1.5?dz?80.

Abstract: A laser light source for emitting coherent electromagnetic radiation has a vertical far-field radiation profile, having a series of semiconductor layers for generating the coherent electromagnetic radiation. An active region is located on a substrate. The coherent electromagnetic radiation is emitted during operation in an emission direction at least from a main emission region of a radiation output surface, and the radiation output surface is formed by a side surface of the sequence of semiconductor layers. A filter element suppresses coherent electromagnetic radiation in the vertical far-field radiation profile. The radiation was generated during operation and emitted by an auxiliary emission region of the radiation output surface. The auxiliary emission region is vertically offset from and spatially separated from the main emission region.

Abstract: A composite substrate (1) comprising a substrate body (2) and a utility layer (31) fixed on the substrate body (2). A planarization layer (4) is arranged between the utility layer (31) and the substrate body (2). A method for producing a composite substrate (1) applies a planarization layer (4) on a provided utility substrate (3). The utility substrate (3) is fixed on a substrate body (2) for the composite substrate (1). The utility substrate (3) is subsequently separated, wherein a utility layer (31) of the utility substrate (3) remains for the composite substrate (1) on the substrate body (2).

Abstract: A laser light source for emitting coherent electromagnetic radiation has a vertical far-field radiation profile, having a series of semiconductor layers for generating the coherent electromagnetic radiation. An active region is located on a substrate. The coherent electromagnetic radiation is emitted during operation in an emission direction at least from a main emission region of a radiation output surface and the radiation output surface is formed by a side surface of the sequence of semiconductor layers. A filter element suppresses coherent electromagnetic radiation in the vertical far-field radiation profile. The radiation was generated during operation and emitted by an auxiliary emission region of the radiation output surface. The auxiliary emission region is vertically offset from and spatially separated from the main emission region.

Abstract: In at least one embodiment of the optoelectronic semiconductor chip (1), the latter is based on a nitride material system and comprises at least one active quantum well (2). The at least one active quantum well (2) is designed to generate electromagnetic radiation when in operation. Furthermore, the at least one active quantum well (2) comprises N successive zones (A) in a direction parallel to a growth direction z of the semiconductor chip (1), N being a natural number greater than or equal to 2. At least two of the zones (A) of the active quantum well (2) have mutually different average indium contents c. Furthermore the at least one active quantum well (2) fulfils the condition: 40??c(z)dz?2.5N?1.

Abstract: An optoelectronic semiconductor chip comprises the following sequence of regions in a growth direction (c) of the semiconductor chip (20): a p doped barrier layer (1) for an active region (2), the active region (2), which is suitable for generating electromagnetic radiation, the active region being based on a hexagonal compound semiconductor, and an n doped barrier layer (3) for the active region (2). Also disclosed are a component comprising such a semiconductor chip, and to a method for producing such a semiconductor chip.

Abstract: A composite substrate (1) comprising a substrate body (2) and a utility layer (31) fixed on the substrate body (2). A planarization layer (4) is arranged between the utility layer (31) and the substrate body (2). A method for producing a composite substrate (1) applies a planarization layer (4) on a provided utility substrate (3). The utility substrate (3) is fixed on a substrate body (2) for the composite substrate (1). The utility substrate (3) is subsequently separated, wherein a utility layer (31) of the utility substrate (3) remains for the composite substrate (1) on the substrate body (2).

Abstract: An optoelectronic semiconductor chip comprises the following sequence of regions in a growth direction (c) of the semiconductor chip (20): a p-doped barrier layer (1) for an active region (2), the active region (2), which is suitable for generating electromagnetic radiation, the active region being based on a hexagonal compound semiconductor, and an n-doped barrier layer (3) for the active region (2). Also disclosed are a component comprising such a semiconductor chip, and a method for producing such a semiconductor chip.