Abstract: A method for use in forming a photovoltaic device includes forming a doped semiconductor layer on a surface of a semiconductor substrate and forming a metal film on the doped semiconductor layer. A patterned etched resist is formed on the metal film and a dielectric layer is formed on the doped semiconductor layer and the etched resist. A laser having a wavelength absorbable by the patterned etch resist is applied through the dielectric layer to the patterned etch resist to remove the patterned etch resist.

Abstract: A method for use in forming a photovoltaic device includes forming a doped semiconductor layer on a surface of a semiconductor substrate and forming a metal film on the doped semiconductor layer. A patterned etched resist is formed on the metal film and a dielectric layer is formed on the doped semiconductor layer and the etched resist. A laser having a wavelength absorbable by the patterned etch resist is applied through the dielectric layer to the patterned etch resist to remove the patterned etch resist.

Abstract: A method and resulting structure of patterning a metal film pattern over a substrate, including forming a metal film pattern over the substrate; depositing a coating over the substrate surface and the metal film pattern; and removing the coating over the metal film pattern by laser irradiation. The substrate and coating do not significantly interact with the laser irradiation, and the laser irradiation interacts with the metal film pattern and the coating, resulting in the removal of the coating over the metal film pattern. The invention offers a technique for the formation of a metal pattern surrounded by a dielectric coating for solar cells, where the dielectric coating may function as an antireflection coating on the front surface, internal reflector on the rear surface, and may further may function as a dielectric barrier for subsequent electroplating of metal patterns on either surface.

Abstract: A solar cell formation method, and resulting structure, having a first film and a barrier film over a surface of a doped semiconductor, wherein the optical and/or electrical properties of the first film are transformed in-situ such that a resulting transformed film is better suited to the efficient functioning of the solar cell; wherein portions of the barrier film partially cover the first film and substantially prevent transformation of first film areas beneath the portions of the barrier film.

Abstract: A method for use in forming a photovoltaic device includes forming a doped semiconductor layer on a surface of a semiconductor substrate and forming a metal film on the doped semiconductor layer. A patterned etched resist is formed on the metal film and a dielectric layer is formed on the doped semiconductor layer and the etched resist. A laser having a wavelength absorbable by the patterned etch resist is applied through the dielectric layer to the patterned etch resist to remove the patterned etch resist.

Abstract: A method for use in forming a photovoltaic device includes forming a doped semiconductor layer on a surface of a semiconductor substrate and forming a metal film on the doped semiconductor layer. A patterned etched resist is formed on the metal film and the resist includes a plurality of finger portions and a plurality of bus bar portions aligned in a grid pattern. A metal film is etched to form a pattern of fingers and bus bars according to the resist.

Abstract: A method and resulting structure of patterning a metal film pattern over a substrate, including forming a metal film pattern over the substrate; depositing a coating over the substrate surface and the metal film pattern; and removing the coating over the metal film pattern by laser irradiation. The substrate and coating do not significantly interact with the laser irradiation, and the laser irradiation interacts with the metal film pattern and the coating, resulting in the removal of the coating over the metal film pattern. The invention offers a technique for the formation of a metal pattern surrounded by a dielectric coating for solar cells, where the dielectric coating may function as an antireflection coating on the front surface, internal reflector on the rear surface, and may further may function as a dielectric barrier for subsequent electroplating of metal patterns on either surface.

Abstract: A method for patterning a film pattern on a substrate includes forming a film pattern on a substrate surface, forming a coating over the substrate and the film pattern and inducing porosity or openings in the coating. At least a part of the coating overlying the film pattern is removed including etching at least one layer underlying the coating ahead of removing at least part of the coating.

Abstract: The present invention provides system of active uniform and base station for sensing an aspect of the wearers environment or physiology. Active uniform (1) is comprised of uniform (3), electronic sensors (40) for sensing an aspect of the wearer's environment or of the wearer's physiology and an active tag (10). The system of active uniform (1) and base station (2) is used to collect data from wearers of the at least one item of active uniform which allows an assessment of the health of the wearer where said health assessment is subsequently used to enhance the survivability of the wearer. The active tag contains various components that allow it to communicate with the base station (2) including (i) sensor interface (80) for interfacing electronic sensors (40) to the active tag, (ii) a microcontroller (70), (iii) a data store (60) including flash memory, (iv) radio frequency interface (110), (v) at least one tag antenna (120) and (vi) a battery (100) and power management unit (90).

Abstract: A solar cell formation method, and resulting structure, having a first film and a barrier film over a surface of a doped semiconductor, wherein the optical and/or electrical properties of the first film are transformed in-situ such that a resulting transformed film is better suited to the efficient functioning of the solar cell; wherein portions of the barrier film partially cover the first film and substantially prevent transformation of first film areas beneath the portions of the barrier film.

Abstract: A method and apparatus is provided for hydrogenation of a target, such as a polycrystalline silicon film on a glass substrate, by using an atomic hydrogen source. The target is subjected to intermittent exposure of the atomic hydrogen field of the source until at least one area of the target has been subjected to the hydrogen field for a predetermined minimum period of time. The processing area of the source established by its atomic hydrogen field is smaller than the target, and after the target is moved into the high temperature processing zone it is translated within the high temperature processing zone to intermittently process successive areas of the target until the entire target has been processed for a predetermined minimum period of time. After the entire target has been processed, the target is cooled to a predetermined lower temperature while still intermittently subjecting the target to atomic hydrogen.

Abstract: A method and apparatus is provided for hydrogenation of a target, such as a polycrystalline silicon film on a glass substrate, by using an atomic hydrogen source. The target is subjected to intermittent exposure of the atomic hydrogen field of the source until at least one area of the target has been subjected to the hydrogen field for a predetermined minimum period of time. The processing area of the source established by its atomic hydrogen field is smaller than the target, and after the target is moved into the high temperature processing zone it is translated within the high temperature processing zone to intermittently process successive areas of the target until the entire target has been processed for a predetermined minimum period of time. After the entire target has been processed, the target is cooled to a predetermined lower temperature while still intermittently subjecting the target to atomic hydrogen.

Abstract: The present invention relates to video inspection apparatus (10) for inspecting a pipeline. The apparatus (10) has first (25) and second (29) cables windable respectively in first and second reels on a drum rotatably mounted on a support. A first camera (15) is connected at one end of the first cable (25). A second camera (16) is connected at one end of the second cable (29). The first (25) and second (29) cables can each be manually unwound respectively from the first and second reels in order to advance the first (15) or the second (16) cameras along the inspected pipeline. The first (25) and second (29) cables are connectable to a video display (11) so that images recorded by the first (15) and second (16) cameras can be displayed by the video display (11). The first (25) and second (29) cables are connectable to a power source (14) so that electrical power can be relayed to the first (15) and second (16) cameras.