Abstract: A method for use in forming a photovoltaic device includes forming a doped semiconductor layer on a surface of a semiconductor substrate and forming a metal film on the doped semiconductor layer. A patterned etched resist is formed on the metal film and a dielectric layer is formed on the doped semiconductor layer and the etched resist. A laser having a wavelength absorbable by the patterned etch resist is applied through the dielectric layer to the patterned etch resist to remove the patterned etch resist.

Abstract: A method for use in forming a photovoltaic device includes forming a doped semiconductor layer on a surface of a semiconductor substrate and forming a metal film on the doped semiconductor layer. A patterned etched resist is formed on the metal film and a dielectric layer is formed on the doped semiconductor layer and the etched resist. A laser having a wavelength absorbable by the patterned etch resist is applied through the dielectric layer to the patterned etch resist to remove the patterned etch resist.

Abstract: A method and resulting structure of patterning a metal film pattern over a substrate, including forming a metal film pattern over the substrate; depositing a coating over the substrate surface and the metal film pattern; and removing the coating over the metal film pattern by laser irradiation. The substrate and coating do not significantly interact with the laser irradiation, and the laser irradiation interacts with the metal film pattern and the coating, resulting in the removal of the coating over the metal film pattern. The invention offers a technique for the formation of a metal pattern surrounded by a dielectric coating for solar cells, where the dielectric coating may function as an antireflection coating on the front surface, internal reflector on the rear surface, and may further may function as a dielectric barrier for subsequent electroplating of metal patterns on either surface.

Abstract: A solar cell formation method, and resulting structure, having a first film and a barrier film over a surface of a doped semiconductor, wherein the optical and/or electrical properties of the first film are transformed in-situ such that a resulting transformed film is better suited to the efficient functioning of the solar cell; wherein portions of the barrier film partially cover the first film and substantially prevent transformation of first film areas beneath the portions of the barrier film.

Abstract: A method for use in forming a photovoltaic device includes forming a doped semiconductor layer on a surface of a semiconductor substrate and forming a metal film on the doped semiconductor layer. A patterned etched resist is formed on the metal film and the resist includes a plurality of finger portions and a plurality of bus bar portions aligned in a grid pattern. A metal film is etched to form a pattern of fingers and bus bars according to the resist.

Abstract: A method for use in forming a photovoltaic device includes forming a doped semiconductor layer on a surface of a semiconductor substrate and forming a metal film on the doped semiconductor layer. A patterned etched resist is formed on the metal film and a dielectric layer is formed on the doped semiconductor layer and the etched resist. A laser having a wavelength absorbable by the patterned etch resist is applied through the dielectric layer to the patterned etch resist to remove the patterned etch resist.

Abstract: A method and resulting structure of patterning a metal film pattern over a substrate, including forming a metal film pattern over the substrate; depositing a coating over the substrate surface and the metal film pattern; and removing the coating over the metal film pattern by laser irradiation. The substrate and coating do not significantly interact with the laser irradiation, and the laser irradiation interacts with the metal film pattern and the coating, resulting in the removal of the coating over the metal film pattern. The invention offers a technique for the formation of a metal pattern surrounded by a dielectric coating for solar cells, where the dielectric coating may function as an antireflection coating on the front surface, internal reflector on the rear surface, and may further may function as a dielectric barrier for subsequent electroplating of metal patterns on either surface.

Abstract: A method for patterning a film pattern on a substrate includes forming a film pattern on a substrate surface, forming a coating over the substrate and the film pattern and inducing porosity or openings in the coating. At least a part of the coating overlying the film pattern is removed including etching at least one layer underlying the coating ahead of removing at least part of the coating.

Abstract: A solar cell formation method, and resulting structure, having a first film and a barrier film over a surface of a doped semiconductor, wherein the optical and/or electrical properties of the first film are transformed in-situ such that a resulting transformed film is better suited to the efficient functioning of the solar cell; wherein portions of the barrier film partially cover the first film and substantially prevent transformation of first film areas beneath the portions of the barrier film.

Abstract: A method and apparatus is provided for hydrogenation of a target, such as a polycrystalline silicon film on a glass substrate, by using an atomic hydrogen source. The target is subjected to intermittent exposure of the atomic hydrogen field of the source until at least one area of the target has been subjected to the hydrogen field for a predetermined minimum period of time. The processing area of the source established by its atomic hydrogen field is smaller than the target, and after the target is moved into the high temperature processing zone it is translated within the high temperature processing zone to intermittently process successive areas of the target until the entire target has been processed for a predetermined minimum period of time. After the entire target has been processed, the target is cooled to a predetermined lower temperature while still intermittently subjecting the target to atomic hydrogen.

Abstract: A method and apparatus is provided for hydrogenation of a target, such as a polycrystalline silicon film on a glass substrate, by using an atomic hydrogen source. The target is subjected to intermittent exposure of the atomic hydrogen field of the source until at least one area of the target has been subjected to the hydrogen field for a predetermined minimum period of time. The processing area of the source established by its atomic hydrogen field is smaller than the target, and after the target is moved into the high temperature processing zone it is translated within the high temperature processing zone to intermittently process successive areas of the target until the entire target has been processed for a predetermined minimum period of time. After the entire target has been processed, the target is cooled to a predetermined lower temperature while still intermittently subjecting the target to atomic hydrogen.