Abstract: Improved apparatus, systems and methods, such as those for testing an error correction code (ECC) encoder/decoder for solid-state memory devices, are provided. In one or more embodiments, the improved systems and methods deliberately inject errors into memory storage areas of memory devices to test the operation of the ECC encoder/decoder.

Abstract: Improved apparatus, systems and methods, such as those for testing an error correction code (ECC) encoder/decoder for solid-state memory devices, are provided. In one or more embodiments, the improved systems and methods deliberately inject errors into memory storage areas of memory devices to test the operation of the ECC encoder/decoder.

Abstract: Clock capturing synchronization circuitry first generates a synchronized clock signal from a reference clock signal, then captures the synchronized clock signal, and continues to output a synchronized clock signal after the reference clock signal is removed. The clock capturing synchronization circuitry also reduces input referred jitter in the synchronized clock signal.

Abstract: Clock capturing synchronization circuitry first generates a synchronized clock signal from a reference clock signal, then captures the synchronized clock signal, and continues to output a synchronized clock signal after the reference clock signal is removed. The clock capturing synchronization circuitry also reduces input referred jitter in the synchronized clock signal.

Abstract: Clock capturing synchronization circuitry first generates a synchronized clock signal from a reference clock signal, then captures the synchronized clock signal, and continues to output a synchronized clock signal after the reference clock signal is removed. The clock capturing synchronization circuitry also reduces input referred jitter in the synchronized clock signal.

Abstract: Clock capturing synchronization circuitry first generates a synchronized clock signal from a reference clock signal, then captures the synchronized clock signal, and continues to output a synchronized clock signal after the reference clock signal is removed. The clock capturing synchronization circuitry also reduces input referred jitter in the synchronized clock signal.

Abstract: The delay locked loop (“DLL”) delay interval can be locked to stop the DLL from wasting power in unnecessarily switching to synchronize the device with the DLL is associated to the system clock. This is achieved by adding logic sensing when a DRAM device will not imminently be called upon to output data and when the device has stabilized. Waiting for the DLL delay interval to stabilize before locking the delay interval still allows the DLL to immediately and effectively resume operations when the DLL is needed to synchronize the output of the DRAM device with the system clock. The DLL delay interval can be locked, together with the DLL clock, after the DRAM device is deselected by the chip select control line, after a number of no operation commands have been received, and/or after any command issued to the DRAM device has been completed.

Abstract: Clock capturing synchronization circuitry first generates a synchronized clock signal from a reference clock signal, then captures the synchronized clock signal, and continues to output a synchronized clock signal after the reference clock signal is removed. The clock capturing synchronization circuitry also reduces input referred jitter in the synchronized clock signal.

Abstract: A memory device is configured to conserve electrical current by disabling the address lines provided to a memory bank when the address is not needed, such as during periods of automatic precharge. Because address data need not be provided while the memory bank is in an automatic precharge mode, the current used to keep the address lines active during this time may be conserved by suitably disabling the address lines for the duration of the automatic precharge. Disabling the various address lines may be accomplished by, for example, interposing an enabling element such as a field effect transistor within the address bus driver circuits leading to each memory bank, and by providing a suitable control signal to the enabling element to activate and deactivate the address line as needed.

Abstract: A memory device is configured to conserve electrical current by disabling the address lines provided to a memory bank when the address is not needed, such as during periods of automatic precharge. Because address data need not be provided while the bank is in an automatic precharge mode, the current used to keep the address lines active during this time may be conserved by suitably disabling the address lines for the duration of the automatic precharge. Disabling the various address lines may be accomplished by, for example, interposing a enabling element such as a field effect transistor within the address bus driver circuits leading to each bank, and by providing a suitable control signal to the enabling element to activate and deactivate the address line as needed.