Abstract: The present invention relates to components in an ion implanter that may see incidence of the ion beam, such as a beam dump or a beam stop. Such components will be prone to the ions sputtering material from their surfaces, and sputtered material may become entrained in the ion beam. This entrained material is a source of contamination. The present invention provides an ion implanter comprising power supply apparatus and an ion-receiving component. The component has an opening that receives ions from an ion beam such that ions strike an internal surface. The power supply apparatus is arranged to provide an electrical bias to the internal surface to decelerate the ions prior to their striking the surface, thereby mitigating the problem of material being sputtered from the surface.

Abstract: This invention relates to an ion beam monitoring arrangement for use in an ion implanter where it is desirable to monitor the flux and/or a cross-sectional profile of the ion beam used for implantation. It is often desirable to measure the flux and/or cross-sectional profile of an ion beam in an ion implanter in order to improve control of ion implantation of a semiconductor wafer or similar. The present invention describes adapting the wafer holder to allow such beam profiling to be performed. The substrate holder may be used progressively to occlude the ion beam from a downstream flux monitor or a flux monitor may be located on the wafer holder that is provided with a slit entrance aperture.

Abstract: The present invention relates to components in ion implanters having surfaces, such as graphite surfaces, adjacent to the path of the ion beam through the ion implanter. Such surfaces will be prone to sputtering, and sputtered material may become entrained in the ion beam. The present invention sees the use of surfaces that are formed so as to present a series of angled faces that meet at sharp intersections. In this way, any material will be sputtered away from the ion beam.

Abstract: Components in an ion implanter that may see incidence of the ion beam include a chamber having an elongate slot opening defined by edges so that a central portion of the ion beam enters the component through the opening with the edges clipping at least a peripheral portion of the ion beam. The arrangement mitigates the problem of sputtered material escaping back out from the component and becoming entrained in the ion beam.

Abstract: An implanter provides two-dimensional scanning of a substrate relative to an implant beam so that the beam draws a raster of scan lines on the substrate. The beam current is measured at turnaround points off the substrate and the current value is used to control the subsequent fast scan speed so as to compensate for the effect of any variation in beam current on dose uniformity in the slow scan direction. The scanning may produce a raster of non-intersecting uniformly spaced parallel scan lines and the spacing between the lines is selected to ensure appropriate dose uniformity.

Abstract: The present invention relates to components in an ion implanter that may see incidence of the ion beam, such as a beam dump or a beam stop. Such components will be prone to the ions sputtering material from their surfaces, and sputtered material may become entrained in the ion beam. This entrained material is a source of contamination. The present invention provides an ion implanter comprising power supply apparatus and an ion-receiving component. The component has an opening that receives ions from an ion beam such that ions strike an internal surface. The power supply apparatus is arranged to provide an electrical bias to the internal surface to decelerate the ions prior to their striking the surface, thereby mitigating the problem of material being sputtered from the surface.

Abstract: The present invention relates to components in an ion implanter that may see incidence of the ion beam, such as a beam dump or a beam stop. Such components will be prone to the ions sputtering material from their surfaces, and sputtered material may become entrained in the ion beam. This entrained material is a source of contamination. The present invention provides such components with a chamber having an elongate slot opening defined by edges, and operating the ion implanter such that a central portion of the ion beam enters the component through the opening with the edges clipping at least a peripheral portion of the ion beam. The arrangement mitigates the problem of sputtered material escaping back out from the component and becoming entrained in the ion beam.

Abstract: The present invention relates to components in ion implanters having surfaces, such as graphite surfaces, adjacent to the path of the ion beam through the ion implanter. Such surfaces will be prone to sputtering, and sputtered material may become entrained in the ion beam. The present invention sees the use of surfaces that are formed so as to present a series of angled faces that meet at sharp intersections. In this way, any material will be sputtered away from the ion beam.

Abstract: The present invention relates to an ion beam extraction assembly for use in an ion beam generation apparatus such as those used, for example, in an ion implanter. An ion beam extraction assembly is provided for mounting within an ion beam generating apparatus comprising an ion source such that the extraction assembly is operable to extract ions from the ion source as an ion beam. The extraction assembly comprises an electrode assembly separate from the ion source, an electrode of the electrode assembly defining at least partly a path through the extraction assembly for passage of an ion beam. At least a part of the electrode assembly adjacent the path is tungsten and at least a part of the electrode assembly that is remote from the path is formed from a less expensive and/or lighter material.

Abstract: A wafer support for an ion implanter includes a wafer holder and a support arm for the holder in the implant chamber. A portion of the support arm adjacent the wafer holder is at least intermittently exposed to the ion beam during implantation, as a result of the relative scanning of the ion beam and the wafer holder. An arm shield mechanism has a plurality of shielding surfaces which can be selectively disposed to receive the ion beam to protect the exposed portion of the support arm. The shielding surfaces may form a sleeve arranged over the arm which may be rotatable above the arm to present selected surfaces to the ion beam. Cross contamination when successively implanting different species can be reduced by presenting different shield surfaces to the beam.

Abstract: An implanter provides two-dimensional scanning of a substrate relative to an implant beam so that the beam draws a raster of scan lines on the substrate. The beam current is measured at turnaround points off the substrate and the current value is used to control the subsequent fast scan speed so as to compensate for the effect of any variation in beam current on dose uniformity in the slow scan direction. The scanning may produce a raster of non-intersecting uniformly spaced parallel scan lines and the spacing between the lines is selected to ensure appropriate dose uniformity.

Abstract: An implanter provides two-dimensional scanning of a substrate relative to an implant beam so that the beam draws a raster of scan lines on the substrate. The beam current is measured at turnaround points off the substrate and the current value is used to control the subsequent fast scan speed so as to compensate for the effect of any variation in beam current on dose uniformity in the slow scan direction. The scanning may produce a raster of non-intersecting uniformly spaced parallel scan lines and the spacing between the lines is selected to ensure appropriate dose uniformity.

Abstract: An implanter provides two-dimensional scanning of a substrate relative to an implant beam so that the beam draws a raster of scan lines on the substrate. The beam current is measured at turnaround points off the substrate and the current value is used to control the subsequent fast scan speed so as to compensate for the effect of any variation in beam current on dose uniformity in the slow scan direction. The scanning may produce a raster of non-intersecting uniformly spaced parallel scan lines and the spacing between the lines is selected to ensure appropriate dose uniformity.

Abstract: An implanter provides two-dimensional scanning of a substrate relative to an implant beam so that the beam draws a raster of scan lines on the substrate. The beam current is measured at turnaround points off the substrate and the current value is used to control the subsequent fast scan speed so as to compensate for the effect of any variation in beam current on dose uniformity in the slow scan direction. The scanning may produce a raster of non-intersecting uniformly spaced parallel scan lines and the spacing between the lines is selected to ensure appropriate dose uniformity.

Abstract: An implanter provides two-dimensional scanning of a substrate relative to an implant beam so that the beam draws a raster of scan lines on the substrate. The beam current is measured at turnaround points off the substrate and the current value is used to control the subsequent fast scan speed so as to compensate for the effect of any variation in beam current on dose uniformity in the slow scan direction. The scanning may produce a raster of non-intersecting uniformly spaced parallel scan lines and the spacing between the lines is selected to ensure appropriate dose uniformity.

Abstract: This invention relates to a method of implanting a substrate comprising scanning an ion beam relative to a substrate along a series of scan lines extending in a first direction, causing relative rotation between the substrate and the ion beam, scanning the ion beam along a second series of scan lines in a different direction. The implant recipe is changed during scanning in each direction such that different regions are produced during each scanning step. The regions so formed during the two scanning steps overlap such that different parts of the substrate receive different doses according to different recipes during the implantation process. The different recipes may result in different dopant concentrations, doping depths or even different dopant species.

Abstract: An implanter provides two-dimensional scanning of a substrate relative to an implant beam so that the beam draws a raster of scan lines on the substrate. The beam current is measured at turnaround points off the substrate and the current value is used to control the subsequent fast scan speed so as to compensate for the effect of any variation in beam current on dose uniformity in the slow scan direction. The scanning may produce a raster of non-intersecting uniformly spaced parallel scan lines and the spacing between the lines is selected to ensure appropriate dose uniformity.

Abstract: An implanter provides two-dimensional scanning of a substrate relative to an implant beam so that the beam draws a raster of scan lines on the substrate. The beam current is measured at turnaround points off the substrate and the current value is used to control the subsequent fast scan speed so as to compensate for the effect of any variation in beam current on dose uniformity in the slow scan direction. The scanning may produce a raster of non-intersecting uniformly spaced parallel scan lines and the spacing between the lines is selected to ensure appropriate dose uniformity.

Abstract: An implanter provides two-dimensional scanning of a substrate relative to an implant beam so that the beam draws a raster of scan lines on the substrate. The beam current is measured at turnaround points off the substrate and the current value is used to control the subsequent fast scan speed so as to compensate for the effect of any variation in beam current on dose uniformity in the slow scan direction. The scanning may produce a raster of non-intersecting uniformly spaced parallel scan lines and the spacing between the lines is selected to ensure appropriate dose uniformity.

Abstract: A wafer support for an ion implanter includes a wafer holder and a support arm for the holder in the implant chamber. A portion of the support arm adjacent the wafer holder is at least intermittently exposed to the ion beam during implantation, as a result of the relative scanning of the ion beam and the wafer holder. An arm shield mechanism has a plurality of shielding surfaces which can be selectively disposed to receive the ion beam to protect the exposed portion of the support arm. The shielding surfaces may form a sleeve arranged over the arm which may be rotatable above the arm to present selected surfaces to the ion beam. Cross contamination when successively implanting different species can be reduced by presenting different shield surfaces to the beam.