Patents by Inventor Adrian Sherrill

Adrian Sherrill has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method for making a semiconductor device having a high-k gate dielectric
    Publication number: 20060166447
    Abstract: A method for making a semiconductor device is described. That method comprises forming an oxide layer on a substrate, and forming a high-k dielectric layer on the oxide layer. The oxide layer and the high-k dielectric layer are then annealed at a sufficient temperature for a sufficient time to generate a gate dielectric with a graded dielectric constant.
    Type: Application
    Filed: March 27, 2006
    Publication date: July 27, 2006
    Inventors: Mark Doczy, Gilbert Dewey, Suman Datta, Sangwoo Pae, Justin Brask, Jack Kavalieros, Matthew Metz, Adrian Sherrill, Markus Kuhn, Robert Chau
  • Method for making a semiconductor device having a high-k gate dielectric
    Publication number: 20060051882
    Abstract: A method for making a semiconductor device is described. That method comprises forming an oxide layer on a substrate, and forming a high-k dielectric layer on the oxide layer. The oxide layer and the high-k dielectric layer are then annealed at a sufficient temperature for a sufficient time to generate a gate dielectric with a graded dielectric constant.
    Type: Application
    Filed: August 22, 2005
    Publication date: March 9, 2006
    Inventors: Mark Doczy, Gilbert Dewey, Suman Datta, Sangwoo Pae, Justin Brask, Jack Kavalieros, Matthew Metz, Adrian Sherrill, Markus Kuhn, Robert Chau
  • Method for making a semiconductor device having a high-k gate dielectric
    Publication number: 20060051880
    Abstract: A method for making a semiconductor device is described. That method comprises forming an oxide layer on a substrate, and forming a high-k dielectric layer on the oxide layer. The oxide layer and the high-k dielectric layer are then annealed at a sufficient temperature for a sufficient time to generate a gate dielectric with a graded dielectric constant.
    Type: Application
    Filed: September 7, 2004
    Publication date: March 9, 2006
    Inventors: Mark Doczy, Gilbert Dewey, Suman Datta, Sangwoo Pae, Justin Brask, Jack Kavalieros, Matthew Metz, Adrian Sherrill, Markus Kuhn, Robert Chau