Patents by Inventor Adrian Stefan Avramescu
Adrian Stefan Avramescu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Patent number: 9478945Abstract: An optoelectronic semiconductor body has a substrate that includes a strained layer that is applied to the substrate in a first epitaxy step. The strained layer includes at least one recess formed vertically in the strained layer. In a second epitaxy step, a further layer applied to the strained layer. The further layer fills the at least one recess and covers the strained layer at least in some areas.Type: GrantFiled: May 15, 2012Date of Patent: October 25, 2016Assignee: OSRAM Opto Semiconductors GmbHInventors: Adrian Stefan Avramescu, Ines Pietzonka, Dimitri Dini
-
Publication number: 20160240734Abstract: An optoelectronic semiconductor component includes a layer stack based on a nitride compound semiconductor and has an n-type semiconductor region , a p-type semiconductor region and an active layer arranged between the n-type semiconductor region and the p-type semiconductor region. In order to form an electron barrier, the p-type semiconductor region includes a layer sequence having a plurality of p-doped layers composed of AlxInGa1-x-yN where 0<=x<=1, 0<=y<=1 and x+y<=1. The layer sequence includes a first p-doped layer having an aluminum proportion x1>=0.5 and a thickness of not more than 3 nm, and the first p-doped layer, at a side facing away from the active layer, is succeeded by at least a second p-doped layer having an aluminum proportion x2<x1 and a third p-doped layer having an aluminum proportion x3<x2.Type: ApplicationFiled: October 9, 2014Publication date: August 18, 2016Inventors: Adrian Stefan Avramescu, Teresa Wurm, Jelena Ristic, Alvaro Gomez-Iglesias
-
Publication number: 20160211646Abstract: A semiconductor stripe laser has a first semiconductor region having a first conductivity type and a second semiconductor region having a different, second conductivity type. An active zone for generating laser radiation is located between the semiconductor regions. A stripe waveguide is formed in the second semiconductor region and is arranged to guide waves in a one-dimensional manner and is arranged for a current density of at least 0.5 kA/cm2. A second electrical contact is located on the second semiconductor region and on an electrical contact structure for external electrical contacting. An electrical passivation layer is provided in certain places on the stripe waveguide. A thermal insulation apparatus is located between the second electrical contact and the active zone and/or on the stripe waveguide.Type: ApplicationFiled: May 5, 2015Publication date: July 21, 2016Inventors: Adrian Stefan Avramescu, Clemens Vierheilig, Christoph Eichler, Alfred Lell, Jens Mueller
-
Patent number: 9373937Abstract: A semiconductor laser includes a layer structure with superimposed layers with at least the following layer structure: an n-doped outer layer, a third wave-guiding layer, an active zone in which light-generating structures are arranged, a second wave-guiding layer, a blocking layer, a first wave-guiding layer, a p-doped outer layer. The first, second and third wave-guiding layers have at least AlxInyGa (1?x?y) N. The blocking layer has an Al content which is at least 2% greater than the Al content of the adjacent first wave-guiding layer. The Al content of the blocking layer increases from the first wave-guiding layer towards the second wave-guiding layer. The layer structure has a double-sided gradation. The double-side gradation is arranged at the height of the blocking layer such that at least one part of the blocking layer or the entire blocking layer is of greater width than the first wave-guiding layer.Type: GrantFiled: September 3, 2013Date of Patent: June 21, 2016Assignee: OSRAM Opto Semiconductors GmbHInventors: Uwe Strauβ, Teresa Wurm, Adrian Stefan Avramescu, Georg Brüderl, Christoph Eichler, Sven Gerhard
-
Patent number: 9318651Abstract: A semiconductor chip with a layer stack includes a first semiconductor layer sequence and a second semiconductor layer sequence. The first semiconductor layer sequence includes a first semiconductor region of a first conductivity type, a second semiconductor region of a second conductivity type and an active zone arranged therebetween. The second semiconductor layer sequence includes the second semiconductor region of the second conductivity type, a third semiconductor region of the first conductivity type and a second active zone arranged therebetween.Type: GrantFiled: October 8, 2012Date of Patent: April 19, 2016Assignee: OSRAM Opto Semiconductors GmbHInventors: Adrian Stefan Avramescu, Patrick Rode, Martin Strassburg
-
Patent number: 9281656Abstract: In at least one embodiment, the bar laser (1) has a semiconductor layer sequence (2) with an active zone (20). A waveguide (3) with a defined width (B) is formed as an elevation from the semiconductor layer sequence (2). A contact metallization (4) is applied to an upper side (30) of the waveguide (3) facing away from the active zone (20). A current flow layer (5) is in direct contact with the contact metallization (4). The contact metallization (4) is electrically connected via the current flow layer (5). A current flow width (C) of the active zone (20) and/or the waveguide (3) is less than the width (B) of the waveguide (3).Type: GrantFiled: June 3, 2013Date of Patent: March 8, 2016Assignee: OSRAM OPTO SEMICONDUCTORS GMBHInventors: Jens Mueller, Adrian Stefan Avramescu
-
Publication number: 20150255956Abstract: A semiconductor laser includes a layer structure with superimposed layers with at least the following layer structure: an n-doped outer layer, a third wave-guiding layer, an active zone in which light-generating structures are arranged, a second wave-guiding layer, a blocking layer, a first wave-guiding layer, a p-doped outer layer. The first, second and third wave-guiding layers have at least AlxInyGa (1?x?y) N. The blocking layer has an Al content which is at least 2% greater than the Al content of the adjacent first wave-guiding layer. The Al content of the blocking layer increases from the first wave-guiding layer towards the second wave-guiding layer. The layer structure has a double-sided gradation. The double-side gradation is arranged at the height of the blocking layer such that at least one part of the blocking layer or the entire blocking layer is of greater width than the first wave-guiding layer.Type: ApplicationFiled: September 3, 2013Publication date: September 10, 2015Applicant: OSRAM Opt Semiconductors GmbHInventors: Uwe Strauß, Teresa Wurm, Adrian Stefan Avramescu, Georg Brüderl, Christoph Eichler, Sven Gerhard
-
Publication number: 20150194788Abstract: In at least one embodiment, the bar laser (1) has a semiconductor layer sequence (2) with an active zone (20). A waveguide (3) with a defined width (B) is formed as an elevation from the semiconductor layer sequence (2). A contact metallization (4) is applied to an upper side (30) of the waveguide (3) facing away from the active zone (20). A current flow layer (5) is in direct contact with the contact metallization (4). The contact metallization (4) is electrically connected via the current flow layer (5). A current flow width (C) of the active zone (20) and/or the waveguide (3) is less than the width (B) of the waveguide (3).Type: ApplicationFiled: June 3, 2013Publication date: July 9, 2015Applicant: OSRAM OPTO SEMICONDUCTORS GMBHInventors: Jens Mueller, Adrian Stefan Avramescu
-
Patent number: 9054487Abstract: A semiconductor stripe laser has a first semiconductor region having a first conductivity type and a second semiconductor region having a different, second conductivity type. An active zone for generating laser radiation is located between the semiconductor regions. A stripe waveguide is formed in the second semiconductor region and is arranged to guide waves in a one-dimensional manner and is arranged for a current density of at least 0.5 kA/cm2. A second electrical contact is located on the second semiconductor region and on an electrical contact structure for external electrical contacting. An electrical passivation layer is provided in certain places on the stripe waveguide. A thermal insulation apparatus is located between the second electrical contact and the active zone and/or on the stripe waveguide.Type: GrantFiled: November 27, 2013Date of Patent: June 9, 2015Assignee: OSRAM Opto Semiconductors GmbHInventors: Adrian Stefan Avramescu, Clemens Vierheilig, Christoph Eichler, Alfred Lell, Jens Mueller
-
Patent number: 8916849Abstract: An optoelectronic semiconductor chip, the latter includes a carrier and a semiconductor layer sequence grown on the carrier. The semiconductor layer sequence is based on a nitride-compound semiconductor material and contains at least one active zone for generating electromagnetic radiation and at least one waveguide layer, which indirectly or directly adjoins the active zone. A waveguide being formed. In addition, the semiconductor layer sequence includes a p-cladding layer adjoining the waveguide layer on a p-doped side and/or an n-cladding layer on an n-doped side of the active zone. The waveguide layer indirectly or directly adjoins the cladding layer. An effective refractive index of a mode guided in the waveguide is in this case greater than a refractive index of the carrier.Type: GrantFiled: February 23, 2011Date of Patent: December 23, 2014Assignee: OSRAM Opto Semiconductors GmbHInventors: Christoph Eichler, Teresa Lermer, Adrian Stefan Avramescu
-
Publication number: 20140239253Abstract: A semiconductor chip with a layer stack includes a first semiconductor layer sequence and a second semiconductor layer sequence. The first semiconductor layer sequence includes a first semiconductor region of a first conductivity type, a second semiconductor region of a second conductivity type and an active zone arranged therebetween. The second semiconductor layer sequence includes the second semiconductor region of the second conductivity type, a third semiconductor region of the first conductivity type and a second active zone arranged therebetween.Type: ApplicationFiled: October 8, 2012Publication date: August 28, 2014Applicant: OSRAM OPTO SEMICONDUCTORS GMBHInventors: Adrian Stefan Avramescu, Patrick Rode, Martin Strassburg
-
Publication number: 20140146842Abstract: A semiconductor stripe laser has a first semiconductor region having a first conductivity type and a second semiconductor region having a different, second conductivity type. An active zone for generating laser radiation is located between the semiconductor regions. A stripe waveguide is formed in the second semiconductor region and is arranged to guide waves in a one-dimensional manner and is arranged for a current density of at least 0.5 kA/cm2. A second electrical contact is located on the second semiconductor region and on an electrical contact structure for external electrical contacting. An electrical passivation layer is provided in certain places on the stripe waveguide. A thermal insulation apparatus is located between the second electrical contact and the active zone and/or on the stripe waveguide.Type: ApplicationFiled: November 27, 2013Publication date: May 29, 2014Inventors: Adrian Stefan Avramescu, Clemens Vierheilig, Christoph Eichler, Alfred Lell, Jens Mueller
-
Publication number: 20140138703Abstract: An optoelectronic semiconductor body has a substrate that includes a strained layer that is applied to the substrate in a first epitaxy step. The strained layer includes at least one recess formed vertically in the strained layer. In a second epitaxy step, a further layer applied to the strained layer. The further layer fills the at least one recess and covers the strained layer at least in some areas.Type: ApplicationFiled: May 15, 2012Publication date: May 22, 2014Applicant: OSRAM Opto Semiconductors GmbHInventors: Adrian Stefan Avramescu, Ines Pietzonka, Dimitri Dini
-
Patent number: 8711893Abstract: An optoelectronic component contains an epitaxial layer sequence based on a nitride compound semiconductor having an active layer and an epitaxial growth substrate comprising Al1-xGaxN, where 0<x<0.95. In a method for producing an optoelectronic component an epitaxial growth substrate of Al1-x(InyGa1-y)xN or In1-xGaxN, where 0<x<0.99 and 0?y?1, is provided and an epitaxial layer sequence, which is based on a nitride compound semiconductor and contains an active layer, is grown thereon.Type: GrantFiled: January 28, 2009Date of Patent: April 29, 2014Assignee: OSRAM Opto Semiconductors GmbHInventors: Adrian Stefan Avramescu, Christoph Eichler, Uwe Strauss, Volker Haerle
-
Patent number: 8390004Abstract: A light-emitting structure includes a p-doped region for injecting holes and an n-doped region for injecting electrons. At least one InGaN quantum well of a first type and at least one InGaN quantum well of a second type are arranged between the n-doped region and the p-doped region. The InGaN quantum well of the second type has a higher indium content than the InGaN quantum well of the first type.Type: GrantFiled: August 25, 2008Date of Patent: March 5, 2013Assignee: OSRAM Opto Semiconductors GmbHInventors: Adrian Stefan Avramescu, Hans-Juergen Lugauer, Matthias Peter, Stephan Miller
-
Publication number: 20130039376Abstract: An optoelectronic semiconductor chip, the latter includes a carrier and a semiconductor layer sequence grown on the carrier. The semiconductor layer sequence is based on a nitride-compound semiconductor material and contains at least one active zone for generating electromagnetic radiation and at least one waveguide layer, which indirectly or directly adjoins the active zone. A waveguide being formed. In addition, the semiconductor layer sequence includes a p-cladding layer adjoining the waveguide layer on a p-doped side and/or an n-cladding layer on an n-doped side of the active zone. The waveguide layer indirectly or directly adjoins the cladding layer. An effective refractive index of a mode guided in the waveguide is in this case greater than a refractive index of the carrier.Type: ApplicationFiled: February 23, 2011Publication date: February 14, 2013Applicant: OSRAM OPTO SEMICONDUCTORS GMBHInventors: Christoph Eichler, Teresa Lermer, Adrian Stefan Avramescu
-
Publication number: 20110051771Abstract: An optoelectronic component contains an epitaxial layer sequence (6) based on a nitride compound semiconductor having an active layer (4) and, wherein the epitaxial growth substrate (1) comprises Al1-xGaxN, where 0<x<0.95. In the case of a method for producing an optoelectronic component an epitaxial growth substrate (1) of Al1-x(InyGa1-y)xN or In1-xGaxN, where 0<x<0.99 and 0?y?1 is provided and an epitaxial layer sequence (6) which is based on a nitride compound semiconductor and contains an active layer (4) is grown thereon.Type: ApplicationFiled: January 28, 2009Publication date: March 3, 2011Applicant: OSRAM Opto Semiconductors GmbHInventors: Adrian Stefan Avramescu, Christoph Eichler, Uwe Strauss, Volke Härle
-
Publication number: 20100207098Abstract: A light-emitting structure includes a p-doped region for injecting holes and an n-doped region for injecting electrons. At least one InGaN quantum well of a first type and at least one InGaN quantum well of a second type, are arranged between the n-doped region and the p-doped region. The InGaN quantum well of the second type has a higher indium content than the InGaN quantum well of the first type.Type: ApplicationFiled: August 25, 2008Publication date: August 19, 2010Inventors: Adrian Stefan Avramescu, Hans-Juergen Lugauer, Matthias Peter, Stephan Miller