Abstract: A method of delivering a reagent to a wafer is provided. A solvent is provided. A set of conditions of temperature and pressure is provided to the solvent, which is sufficient to bring the solvent to supercritical conditions. A reagent is provided. A surfactant is provided, where the surfactant has a first moiety with an affinity for the solvent and a second moiety with an affinity for the reagent, where the surfactant increases the concentration of the reagent that may be carried by the solvent. The solvent, surfactant, and reagent are combined to form a solution. The solution is delivered to a supercritical process chamber, wherein a wafer is exposed to the solution in the process chamber.

Abstract: Methods for cleaning semiconductor wafers are presented. Contaminants, particularly photoresist and post-etch residue, are removed from semiconductor wafers. A wafer or wafers is first treated with a peroxide-containing medium, for example, to oxidatively cleave bond structures of contaminants on the wafer work surface. Excitation energy is used to activate the peroxide-containing medium toward the formation of radical species. After treatment with the peroxide-containing medium, a supercritical fluid treatment is used to remove any remaining contaminants as well as to condition the wafer for subsequent processing.

Abstract: A supercritical process vessel with an interior for holding a supercritical fluid is provided. A wafer support for supporting a wafer within the interior of a supercritical process vessel to expose the wafer to the supercritical fluid is provided. A lamp, which is able to operate at supercritical fluid pressures within the interior of the supercritical process vessel is provided.