Abstract: The disclosed technology generally relates to magnetic devices, and more particularly to magnetic devices configured to generate a stream of domain walls propagating along an output magnetic bus. In an aspect, a magnetic device includes a magnetic propagation layer, which in turn includes a plurality of magnetic buses. The magnetic buses include at least a first magnetic bus, a second magnetic bus, and an output magnetic bus configured to guide propagating magnetic domain walls. The magnetic propagation layer further comprises a central region in which the magnetic buses converge and are joined together. In another aspect, a method includes providing the magnetic device and generating the stream of domain walls propagating along the output magnetic bus.

Abstract: The disclosed technology generally relates to magnetic devices, and more particularly to magnetic devices configured to generate a stream of domain walls propagating along an output magnetic bus. In an aspect, a magnetic device includes a magnetic propagation layer, which in turn includes a plurality of magnetic buses. The magnetic buses include an output magnetic bus configured to guide propagating magnetic domain walls. The magnetic propagation layer further comprises a central region in which the magnetic buses converge and are joined together. The magnetic buses include at least a first and a second magnetic bus having opposite magnetization orientations with respect to each other, such that a domain wall separating the opposite magnetization states is pinned in the central region.

Abstract: The disclosed technology generally relates to magnetic devices, and more particularly to magnetic devices configured to generate a stream of domain walls propagating along an output magnetic bus. In an aspect, a magnetic device includes a magnetic propagation layer, which in turn includes a plurality of magnetic buses. The magnetic buses include at least a first magnetic bus, a second magnetic bus, and an output magnetic bus configured to guide propagating magnetic domain walls. The magnetic propagation layer further comprises a central region in which the magnetic buses converge and are joined together. In another aspect, a method includes providing the magnetic device and generating the stream of domain walls propagating along the output magnetic bus.

Abstract: The disclosed technology relates generally to spintronics, and more particularly to a magnetic majority gate device. In one aspect, a magnetic majority gate device includes a magnetic propagation layer and at least one input transducer. The magnetic propagation layer includes a plurality of magnetic buses configured to guide propagating magnetic domain walls along longitudinal directions corresponding to elongated directions of the magnetic buses. The plurality of magnetic buses includes a plurality of input magnetic buses, where each of the input magnetic buses has a corresponding input site configured to receive a corresponding input magnetic domain wall. At least one input transducer at a corresponding input site is configured to convert a digital input electrical signal into an input magnetic domain wall, such that a magnetization state of the input magnetic domain wall corresponds to a digital logic state of the digital input electrical signal.

Abstract: The disclosed technology generally relates to magnetic memory and more particularly to voltage-controlled magnetic memory, and to methods of using same. In one aspect, a magnetic memory comprises a first magnetic stack including a first gate dielectric layer formed between a first gate electrode and a first free ferromagnetic layer. The magnetic memory additionally comprises a second magnetic stack including a second gate dielectric layer formed between a second gate electrode and a second free ferromagnetic layer. The first free ferromagnetic layer and the second free ferromagnetic layer of the magnetic memory are magnetically coupled, contiguous and are positioned at an oblique angle relative to each other, and the first gate electrode and the second gate electrode are electrically isolated from each other.

Abstract: The disclosed technology generally relates to magnetic devices and more particularly to spin torque majority gate devices, and to methods of operating such devices. In one aspect, a majority gate device comprises a free ferromagnetic layer comprising 3N input zones and an output zone. The output zone has a polygon shape having 3N sides, where each input zone adjoins the output zone. The input zones are arranged around the output zone according to a 3N-fold rotational symmetry, where N is a positive integer greater than 0. The input zones are spaced apart from one another by the output zone. The majority gate device additionally comprises a plurality of input controls, where each of the input zones is magnetically coupled to a corresponding one of the plurality of input controls, where each of the input controls is configured to control the magnetization state of the corresponding input zone.

Abstract: The disclosed technology generally relates to magnetic devices, and more particularly to magnetic devices configured to generate a stream of domain walls propagating along an output magnetic bus. In an aspect, a magnetic device includes a magnetic propagation layer, which in turn includes a plurality of magnetic buses. The magnetic buses include an output magnetic bus configured to guide propagating magnetic domain walls. The magnetic propagation layer further comprises a central region in which the magnetic buses converge and are joined together. The magnetic buses include at least a first and a second magnetic bus having opposite magnetization orientations with respect to each other, such that a domain wall separating the opposite magnetization states is pinned in the central region.

Abstract: The disclosed technology relates generally to spintronics, and more particularly to a magnetic majority gate device. In one aspect, a magnetic majority gate device includes a magnetic propagation layer and at least one input transducer. The magnetic propagation layer includes a plurality of magnetic buses configured to guide propagating magnetic domain walls along longitudinal directions corresponding to elongated directions of the magnetic buses. The plurality of magnetic buses includes a plurality of input magnetic buses, where each of the input magnetic buses has a corresponding input site configured to receive a corresponding input magnetic domain wall. At least one input transducer at a corresponding input site is configured to convert a digital input electrical signal into an input magnetic domain wall, such that a magnetization state of the input magnetic domain wall corresponds to a digital logic state of the digital input electrical signal.

Abstract: The disclosed technology generally relates to magnetic memory and more particularly to voltage-controlled magnetic memory, and to methods of using same. In one aspect, a magnetic memory comprises a first magnetic stack including a first gate dielectric layer formed between a first gate electrode and a first free ferromagnetic layer. The magnetic memory additionally comprises a second magnetic stack including a second gate dielectric layer formed between a second gate electrode and a second free ferromagnetic layer. The first free ferromagnetic layer and the second free ferromagnetic layer of the magnetic memory are magnetically coupled, contiguous and are positioned at an oblique angle relative to each other, and the first gate electrode and the second gate electrode are electrically isolated from each other.

Abstract: The disclosed technology generally relates to magnetic devices and more particularly to spin torque majority gate devices, and to methods of operating such devices. In one aspect, a majority gate device comprises a free ferromagnetic layer comprising 3N input zones and an output zone. The output zone has a polygon shape having 3N sides, where each input zone adjoins the output zone. The input zones are arranged around the output zone according to a 3N-fold rotational symmetry, where N is a positive integer greater than 0. The input zones are spaced apart from one another by the output zone. The majority gate device additionally comprises a plurality of input controls, where each of the input zones is magnetically coupled to a corresponding one of the plurality of input controls, where each of the input controls is configured to control the magnetization state of the corresponding input zone.