Abstract: A method of depositing tungsten on a semiconductor substrate is disclosed. The semiconductor substrate is heated to between about 360° C. and about 390° C. and preferably about 375° C. Initiation gases are introduced into a first deposition station of a chemical vapor deposition chamber to form an amorphous, monolayer of silicon. Initiation gas comprises a silane gas flow at a rate of about 40 to about 48 standard cubic centimeters per minute. A nucleation gas flow rate formed of silane of about 20 to about 30 standard cubic centimeters per minute and a tungsten hexafluoride gas flow at a rate of about 300 to about 350 standard cubic standard centimeters per minute is next introduced. A hydrogen reducing gas flow rate is then introduced to form a layer of hydrogen reduced bulk tungsten.

Abstract: A deposition apparatus includes a controllable edge exclusion assembly for controllably excluding deposition adjacent a peripheral edge of a wafer within a deposition chamber and based upon fluid flow. The controllable edge exclusion assembly includes a ring-shaped body extending inwardly from the peripheral edge of the wafer and spaced above an adjacent front surface of the wafer. The ring-shaped body has fluid passageways so that fluid flow from adjacent a back surface of the wafer passes over the peripheral edge of the wafer and through the fluid passageways to thereby exclude deposition adjacent the peripheral edge of the wafer. The assembly also includes a flow controller associated with the fluid passageways for controlling fluid flow therethrough. The flow controller may include a control body having a plurality of fluid passageways therein, and which is relatively movable with respect to the ring-shaped body.