Abstract: A substrate structure, a semiconductor package and a manufacturing method of semiconductor package are provided. The substrate structure comprises a conductive structure, an electrical component, a package body and a ring-shaped conductive structure. The conductive structure comprises a first conductive layer and a second conductive layer. The first conductive layer has a lower surface. The second conductive layer and the electrical component are formed on the lower surface of the first conductive layer. The package body encapsulates the conductive structure and the electrical component and has an upper surface. The ring-shaped conductive structure surrounds the conductive structure and the electrical component and is disposed at the edge of the upper surface of the package body to expose the conductive structure.

Abstract: A substrate structure, a semiconductor package device and a manufacturing method of substrate structure are provided. The substrate structure comprises a conductive structure comprising a first metal layer, a second metal layer and a third metal layer. The second metal layer is disposed on the first metal layer. The third metal layer is disposed on the second metal layer. Each of the second metal layer and the third metal layer has a first surface and a second surface opposite to the first surface. The first surface of the third metal layer is connected to the second surface of the second metal layer. The surface area of the first surface of the third metal layer is larger than that of the second surface of the second metal layer. A substrate structure, semiconductor package device, and a manufacturing method of substrate structure are provided. The substrate structure includes a conductive structure, comprising a first metal layer, a second metal layer, and a third metal layer.

Abstract: A package substrate including a dielectric layer, a first conductive layer, a second conductive layer and a bonding pad is provided. The dielectric layer has a top surface and a bottom surface. The first conductive layer is embedded into the dielectric layer, and a first surface of the first conductive layer is exposed from the top surface and has the same plane with the top surface. The second conductive layer is embedded into the dielectric layer and contacts the first conductive layer, and a second surface of the second conductive layer is exposed from the bottom surface and has the same plane with the bottom surface. The bonding pad is partially or completely embedded into the first conductive layer and the dielectric layer, so that the periphery of the bonding pad is confined within a cavity by the sidewalls of both the first conductive layer and the dielectric layer.