Patents by Inventor Afshin Bazhushtari

Afshin Bazhushtari has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Silane recirculation for rapid carbon/silicon carbide or silicon carbide/silicon carbide ceramic matrix composites
    Patent number: 11255015
    Abstract: A system for chemical vapor densification includes a reaction chamber having an inlet and outlet; a trap; a conduit fluidly coupled between the outlet of the reaction chamber and the trap; a cryogenic cooler fluidly coupled to the trap though a frustoconical conduit; a first exit path from the cryogenic cooler that vents hydrogen gas to an exhaust; and a second exit path from the cryogenic cooler that recirculates silane and hydrocarbon-rich gas back to the inlet of the reaction chamber—and a related method places a substrate in the reaction chamber; establishes a sub-atmospheric pressure inert gas atmosphere within the reaction chamber; densifies the substrate by inputting virgin gas into the reaction chamber; withdraws effluent gas from the reaction chamber; extracts silane and hydrocarbon-rich gas from the effluent gas; and recirculates the silane and hydrocarbon-rich gas back to the reaction chamber.
    Type: Grant
    Filed: May 6, 2020
    Date of Patent: February 22, 2022
    Assignee: Goodrich Corporation
    Inventors: Gavin Charles Richards, Tod Policandriotes, Afshin Bazhushtari
  • SILANE RECIRCULATION FOR RAPID CARBON/SILICON CARBIDE OR SILICON CARBIDE/SILICON CARBIDE CERAMIC MATRIX COMPOSITES
    Publication number: 20200263302
    Abstract: A system for chemical vapor densification includes a reaction chamber having an inlet and outlet; a trap; a conduit fluidly coupled between the outlet of the reaction chamber and the trap; a cryogenic cooler fluidly coupled to the trap though a frustoconical conduit; a first exit path from the cryogenic cooler that vents hydrogen gas to an exhaust; and a second exit path from the cryogenic cooler that recirculates silane and hydrocarbon-rich gas back to the inlet of the reaction chamber—and a related method places a substrate in the reaction chamber; establishes a sub-atmospheric pressure inert gas atmosphere within the reaction chamber; densifies the substrate by inputting virgin gas into the reaction chamber; withdraws effluent gas from the reaction chamber; extracts silane and hydrocarbon-rich gas from the effluent gas; and recirculates the silane and hydrocarbon-rich gas back to the reaction chamber.
    Type: Application
    Filed: May 6, 2020
    Publication date: August 20, 2020
    Applicant: GOODRICH CORPORATION
    Inventors: Gavin Charles Richards, Tod Policandriotes, Afshin Bazhushtari
  • Silane recirculation for rapid carbon/silicon carbide or silicon carbide/silicon carbide ceramic matrix composites
    Patent number: 10683572
    Abstract: A system for chemical vapor densification includes a reaction chamber having an inlet and outlet; a trap; a conduit fluidly coupled between the outlet of the reaction chamber and the trap; a cryogenic cooler fluidly coupled to the trap though a frustoconical conduit; a first exit path from the cryogenic cooler that vents hydrogen gas to an exhaust; and a second exit path from the cryogenic cooler that recirculates silane and hydrocarbon-rich gas back to the inlet of the reaction chamber—and a related method places a substrate in the reaction chamber; establishes a sub-atmospheric pressure inert gas atmosphere within the reaction chamber; densifies the substrate by inputting virgin gas into the reaction chamber; withdraws effluent gas from the reaction chamber; extracts silane and hydrocarbon-rich gas from the effluent gas; and recirculates the silane and hydrocarbon-rich gas back to the reaction chamber.
    Type: Grant
    Filed: October 15, 2018
    Date of Patent: June 16, 2020
    Assignee: Goodrich Corporation
    Inventors: Gavin Charles Richards, Tod Policandriotes, Afshin Bazhushtari
  • SILANE RECIRCULATION FOR RAPID CARBON/SILICON CARBIDE OR SILICON CARBIDE/SILICON CARBIDE CERAMIC MATRIX COMPOSITES
    Publication number: 20200115799
    Abstract: A system for chemical vapor densification includes a reaction chamber having an inlet and outlet; a trap; a conduit fluidly coupled between the outlet of the reaction chamber and the trap; a cryogenic cooler fluidly coupled to the trap though a frustoconical conduit; a first exit path from the cryogenic cooler that vents hydrogen gas to an exhaust; and a second exit path from the cryogenic cooler that recirculates silane and hydrocarbon-rich gas back to the inlet of the reaction chamber—and a related method places a substrate in the reaction chamber; establishes a sub-atmospheric pressure inert gas atmosphere within the reaction chamber; densifies the substrate by inputting virgin gas into the reaction chamber; withdraws effluent gas from the reaction chamber; extracts silane and hydrocarbon-rich gas from the effluent gas; and recirculates the silane and hydrocarbon-rich gas back to the reaction chamber.
    Type: Application
    Filed: October 15, 2018
    Publication date: April 16, 2020
    Applicant: GOODRICH CORPORATION
    Inventors: Gavin Charles Richards, Tod Policandriotes, Afshin Bazhushtari