Abstract: An integrated circuit (IC) includes a strained-silicon layer formed by deposition of amorphous silicon onto either a region of a semiconductor layer that has been implanted with ions to create a larger spacing between atoms in a crystalline lattice of the semiconductor layer or a silicon-ion layer that has been epitaxially grown on the semiconductor layer to have an increased spacing between atoms in the silicon-ion layer. Alternatively, the IC includes a strained-silicon layer formed by silicon epitaxial growth onto the region of the semiconductor layer that has been implanted with ions. The IC also preferably includes a CMOS device that preferably, but not necessarily, incorporates sub-0.1 micron technology. The implanted ions may preferably be heavy ions, such as germanium ions, antimony ions or others. Ion implantation may be done with a single implantation process, as well as with multiple implantation processes.

Abstract: An in-line, in-process or in-situ and non-destructive metrology system, apparatus and method provides composition, quality and/or thickness measurement of a thin film or multi-layer thin film formed on a substrate in a thin film processing system. Particularly, the subject invention provides a spectroscopic ellipsometer performing spectroscopic ellipsometry while the wafer is in a thin film processing system. In one form, the spectroscopic ellipsometer is associated with a wet bench system portion of the thin film processing system. The spectroscopic ellipsometer obtains characteristic data regarding the formed thin film to calculate penetration depth (Dp) for a thin film formed on the substrate. Particularly, the ellipsometer obtains an extinction coefficient (k) which is used to calculate penetration depth (Dp). Penetration depth (Dp), being a unique function of the extinction coefficient (k) provides the information for the composition, quality and/or thickness monitoring of the thin film.

Abstract: A strained-silicon film is disclosed. A silicon-germanium film is made by ion implantation of germanium into an epitaxial silicon layer, preferably at a temperature in the range of 200 C to 400 C. The wafer is annealed in situ or optionally after implantation. A silicon film is applied to the silicon-germanium film in a conventional manner to create the strained-silicon substrate.

Abstract: A method for implanting ions in a semiconductor is disclosed. The method includes implanting indium ions into a substrate of a semiconductor material of the semiconductor device for a first time period. The method also includes implanting boron ions into the substrate for a second time period, wherein the first time period is initiated prior to the second time period.

Abstract: An integrated circuit (IC) includes a CMOS device formed above a semiconductor substrate having ions therein that are implanted in the semiconductor substrate by an ion recoil procedure. The IC preferably, but not necessarily, incorporates sub-0.1 micron technology in the CMOS device. The implanted ions may preferably be germanium ions. A strained-silicon layer is preferably, but not necessarily, formed above the ion-implanted layer of the semiconductor substrate. The strained-silicon layer may be formed by a silicon epitaxial growth on the ion-implanted layer or by causing the ions to recoil into the semiconductor substrate with such energy that a region of the semiconductor substrate in the vicinity of the surface thereof is left substantially free of the ions, thereby forming a strained-silicon layer in the substantially ion-free region.

Abstract: A strained-silicon film is disclosed. A silicon-germanium film is made by ion implantation of germanium into an epitaxial silicon layer, preferably at a temperature in the range of 200 C to 400 C. The wafer is annealed in situ or optionally after implantation. A silicon film is applied to the silicon-germanium film in a conventional manner to create the strained-silicon substrate.

Abstract: A method for forming damascene interconnect copper diffusion barrier layers includes implanting calcium into the sidewalls of the trenches and vias. The calcium implantation into dielectric layers, such as oxides, is used to prevent Cu diffusion into oxide, such as during an annealing process step. The improved barrier layers of the present invention help prevent delamination of the Cu from the dielectric.

Abstract: An integrated circuit (IC) includes a CMOS device formed above a semiconductor substrate having ions therein that are implanted in the semiconductor substrate by an ion recoil procedure. The IC preferably, but not necessarily, incorporates sub-0.1 micron technology in the CMOS device. The implanted ions may preferably be germanium ions. A strained-silicon layer is preferably, but not necessarily, formed above the ion-implanted layer of the semiconductor substrate. The strained-silicon layer may be formed by a silicon epitaxial growth on the ion-implanted layer or by causing the ions to recoil into the semiconductor substrate with such energy that a region of the semiconductor substrate in the vicinity of the surface thereof is left substantially free of the ions, thereby forming a strained-silicon layer in the substantially ion-free region.

Abstract: An integrated circuit (IC) includes a CMOS device formed above a semiconductor substrate having ions therein that are implanted in the semiconductor substrate by an ion recoil procedure. The IC preferably, but not necessarily, incorporates sub-0.1 micron technology in the CMOS device. The implanted ions may preferably be germanium ions. A strained-silicon layer is preferably, but not necessarily, formed above the ion-implanted layer of the semiconductor substrate. The strained-silicon layer may be formed by a silicon epitaxial growth on the ion-implanted layer or by causing the ions to recoil into the semiconductor substrate with such energy that a region of the semiconductor substrate in the vicinity of the surface thereof is left substantially free of the ions, thereby forming a strained-silicon layer in the substantially ion-free region.

Abstract: An integrated circuit (IC) includes a strained-silicon layer formed by deposition of amorphous silicon onto either a region of a semiconductor layer that has been implanted with ions to create a larger spacing between atoms in a crystalline lattice of the semiconductor layer or a silicon-ion layer that has been epitaxially grown on the semiconductor layer to have an increased spacing between atoms in the silicon-ion layer. Alternatively, the IC includes a strained-silicon layer formed by silicon epitaxial growth onto the region of the semiconductor layer that has been implanted with ions. The IC also preferably includes a CMOS device that preferably, but not necessarily, incorporates sub-0.1 micron technology. The implanted ions may preferably be heavy ions, such as germanium ions, antimony ions or others. Ion implantation may be done with a single implantation process, as well as with multiple implantation processes.

Abstract: An integrated circuit (IC) includes a CMOS device formed above a semiconductor substrate having ions therein that are implanted in the semiconductor substrate by an ion recoil procedure. The IC preferably, but not necessarily, incorporates sub-0.1 micron technology in the CMOS device. The implanted ions may preferably be germanium ions. A strained-silicon layer is preferably, but not necessarily, formed above the ion-implanted layer of the semiconductor substrate. The strained-silicon layer may be formed by a silicon epitaxial growth on the ion-implanted layer or by causing the ions to recoil into the semiconductor substrate with such energy that a region of the semiconductor substrate in the vicinity of the surface thereof is left substantially free of the ions, thereby forming a strained-silicon layer in the substantially ion-free region.

Abstract: An integrated circuit (IC) includes a CMOS device with a channel region that has ions implanted therein. The IC preferably incorporates sub-0.1 micron technology in the CMOS device. The implanted ions may preferably be germanium ions. The ion-implanted channel region preferably has a carrier mobility that is greater than that for a region that is not implanted with the ions.