Patents by Inventor Agata Lachowicz
Agata Lachowicz has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20220199843Abstract: Method of manufacturing a photovoltaic cell, comprising the steps of: providing a photovoltaic conversion device; providing a transparent conductive oxide layer upon at least a first face of said photovoltaic conversion device; forming a self-assembled monolayer on said transparent conductive oxide layer, said self-assembled monolayer being based on molecules terminated by at least one group F which is chosen from: a phosphonic acid group, a P(O)O2?M+ group, a OPO3H2 group, or an OP(O)O2?M+ group, wherein M+ is a metal cation; patterning said self-assembled monolayer so as to define at least one plateable zone in which said transparent conductive oxide layer is exposed; plating a metal onto said at least one plateable zone.Type: ApplicationFiled: May 20, 2020Publication date: June 23, 2022Applicant: CSEM CENTRE SUISSE D'ELECTRONIQUE ET DE MICROTECHNIQUE SA - RECHERCHE ET DÉVELOPPEMENTInventors: Gaëlle ANDREATTA, Christophe ALLEBE, Agata LACHOWICZ, Nicolas BLONDIAUX, Antonin FAES
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Patent number: 9583652Abstract: A method for the wet-chemical etching of a highly doped silicon layer in an etching solution is provided. The method includes using, as an etching solution so as to perform etching homogeneously, an HF-containing etching solution containing at least one oxidizing agent selected from the group of peroxodisulfates, peroxomonosulfates, and hydrogen peroxide.Type: GrantFiled: September 2, 2011Date of Patent: February 28, 2017Assignee: CSEM CENTRE SUISSE D'ELECTRONIQUE ET DE MICROTECHNIQUE SA—RECHERCHE ET DEVÉLOPPEMENTInventors: Agata Lachowicz, Berthold Schum, Knut Vaas
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Patent number: 9558952Abstract: A process for edge isolation or texture smoothing of a substrate, in which a process medium which allows control treatment of limited regions of the substrate is used. The process is therefore particularly suitable for one-sided treatment of substrates. The viscosity of the process medium plays a central role here. Furthermore, an apparatus designed for the process is presented.Type: GrantFiled: August 12, 2013Date of Patent: January 31, 2017Assignee: Fraunhofer-Gesellschaft zur Förderung der Angewandten Forschung E.V.Inventors: Agata Lachowicz, Berthold Schum, Heinrich Blanke
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Patent number: 9461195Abstract: The invention relates to a method for producing a solar cell having a substrate made of silicon, which substrate has a silicon oxide layer present on the surface of the substrate and an antireflection layer applied to the silicon oxide layer, which antireflection layer is deposited onto the dielectric passivation layer in a process chamber. According to the invention, in order to achieve a stability of corresponding solar cells or solar cell modules produced therefrom against a potential induced degradation (PID), the dielectric passivation layer is formed from the surface of the substrate in the process chamber by means of a plasma containing an oxidizing gas.Type: GrantFiled: February 22, 2013Date of Patent: October 4, 2016Assignee: FRAUNHOFER-GESELLSCHAFT ZUR FÖRDERUNG DER ANGEWANDTEN FORSCHUNG E.V.Inventors: Jens Dirk Moschner, Henning Nagel, Agata Lachowicz, Markus Fiedler
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Publication number: 20150243517Abstract: A process for edge isolation or texture smoothing of a substrate, in which a process medium which allows control treatment of limited regions of the substrate is used. The process is therefore particularly suitable for one-sided treatment of substrates. The viscosity of the process medium plays a central role here. Furthermore, an apparatus designed for the process is presented.Type: ApplicationFiled: August 12, 2013Publication date: August 27, 2015Inventors: Agata Lachowicz, Berthold Schum, Heinrich Blanke
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Publication number: 20150064835Abstract: The invention relates to a method for producing a solar cell having a substrate made of silicon, which substrate has a silicon oxide layer present on the surface of the substrate and an antireflection layer applied to the silicon oxide layer, which antireflection layer is deposited onto the dielectric passivation layer in a process chamber. According to the invention, in order to achieve a stability of corresponding solar cells or solar cell modules produced therefrom against a potential induced degradation (PID), the dielectric passivation layer is formed from the surface of the substrate in the process chamber by means of a plasma containing an oxidizing gas.Type: ApplicationFiled: February 22, 2013Publication date: March 5, 2015Inventors: Jens Dirk Moschner, Henning Nagel, Agata Lachowicz, Markus Fiedler
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Patent number: 8889536Abstract: A method is provided for forming a dopant profile based on a surface of a wafer-like semiconductor component with phosphorus as a dopant. The method includes the steps of applying a phosphorus dopant source onto the surface, forming a first dopant profile with the dopant source that is present on the surface, removing the dopant source, and forming a second dopant profile that has a greater depth in comparison to the first dopant profile. In order to form an optimized dopant profile, the dopant source is removed after forming the first dopant profile, and precipitates that are crystallized selectively on or in the surface from the precipitates SixPy and SixPyOz are removed.Type: GrantFiled: August 30, 2011Date of Patent: November 18, 2014Assignee: Schott Solar AGInventors: Gabriele Blendin, Joerg Horzel, Agata Lachowicz, Berthold Schum
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Publication number: 20130280898Abstract: A method is provided for forming a dopant profile based on a surface of a wafer-like semiconductor component with phosphorus as a dopant. The method includes the steps of applying a phosphorus dopant source onto the surface, forming a first dopant profile with the dopant source that is present on the surface, removing the dopant source, and forming a second dopant profile that has a greater depth in comparison to the first dopant profile. In order to form an optimized dopant profile, the dopant source is removed after forming the first dopant profile, and precipitates that are crystallized selectively on or in the surface from the precipitates SixPy and SixPyOz are removed.Type: ApplicationFiled: August 30, 2011Publication date: October 24, 2013Applicant: SCHOTT SOLAR AGInventors: Gabriele Blendin, Joerg Horzel, Agata Lachowicz, Berthold Schum
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Publication number: 20130255772Abstract: A method for the wet-chemical etching of a highly doped silicon layer in an etching solution is provided. The method includes using, as an etching solution so as to perform etching homogeneously, an HF-containing etching solution containing at least one oxidizing agent selected from the group of peroxodisulfates, peroxomonosulfates, and hydrogen peroxide.Type: ApplicationFiled: September 2, 2011Publication date: October 3, 2013Applicant: Schott Solar AGInventors: Agata Lachowicz, Berthold Schum, Knut Vaas
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Publication number: 20130228220Abstract: A method for the wet-chemical etching of a silicon layer in an alkaline etching solution is provided, where the silicon layer is the surface region of a solar cell emitter. The method ensures that the surface region of the emitter is etched-back homogeneously using an oxidant-free alkaline etching solution comprising at least one organic moderator is used for the isotropic etching back of the surface region of the emitter, where the moderator has a dopant concentration of at least 1018 atoms/cm3.Type: ApplicationFiled: September 2, 2011Publication date: September 5, 2013Applicant: SCHOTT SOLAR AGInventors: Berthold Schum, Knut Vaas, Agata Lachowicz, Norman Hermert
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Publication number: 20130220420Abstract: A method for the wet-chemical etching of a solar cell emitter is provided. The method performs homogeneous etching using an alkaline etching solution containing at least one oxidizing agent selected from the group consisting of peroxodisulphates, peroxomonosulphates and hypochlorite.Type: ApplicationFiled: September 2, 2011Publication date: August 29, 2013Applicant: SCHOTT SOLAR AGInventors: Agata Lachowicz, Berthold Schum, Knut Vaas
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Patent number: 8366901Abstract: A process is provided for metallizing a surface of a substrate with electrolytically plated copper metallization, the process comprising electrolytically depositing copper over the electrically conductive polymer by immersing the substrate in an electrolytic composition and applying an external source of electrons, wherein the electrolytic composition comprises a source of copper ions and has a pH between about 0.5 and about 3.5. In another aspect, a process is provided for metallizing a surface of a dielectric substrate with electrolytically plated copper metallization, the process comprising immersing the substrate into a catalyst composition comprising a precursor for forming an electrically conductive polymer on the surface of the dielectric substrate and a source of Mn(II) ions in an amount sufficient to provide an initial concentration of Mn(II) ions of at least about 0.Type: GrantFiled: September 7, 2007Date of Patent: February 5, 2013Assignee: Enthone Inc.Inventors: Agata Lachowicz, Andreas Glöckner
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Publication number: 20100012500Abstract: A process is provided for metallizing a surface of a substrate with electrolytically plated copper metallization, the process comprising electrolytically depositing copper over the electrically conductive polymer by immersing the substrate in an electrolytic composition and applying an external source of electrons, wherein the electrolytic composition comprises a source of copper ions and has a pH between about 0.5 and about 3.5. In another aspect, a process is provided for metallizing a surface of a dielectric substrate with electrolytically plated copper metallization, the process comprising immersing the substrate into a catalyst composition comprising a precursor for forming an electrically conductive polymer on the surface of the dielectric substrate and a source of Mn(II) ions in an amount sufficient to provide an initial concentration of Mn(II) ions of at least about 0.Type: ApplicationFiled: September 7, 2007Publication date: January 21, 2010Applicant: ENTHONE INC.Inventors: Agata Lachowicz, Andreas Glöcker