Abstract: In an embodiment a method for calibrating temperature sensors includes arranging devices-under-test (DUTs) in a sealable and thermally isolated chamber of a calibration arrangement such that each of the DUTs is in proximity to, associated to and in thermal contact with at least one of a number of reference samples, controlling the calibration arrangement to thermalize the DUTs and the reference samples to a temperature set point and generating, based on a temperature-dependent quantity, a set of measurement signals for each of the DUTs, wherein each set of measurement signals comprises a test measurement signal from a distinct one of the DUTs and a reference measurement signal from each of an associated at least one of the reference samples.

Abstract: A calibration arrangement has a sealable and thermally-isolated chamber comprising a socket mount having a number of reference samples in thermal contact with the socket mount and a number of sample sockets for devices-under test, DUTs, with each sample socket being arranged in proximity to and associated to at least one of the reference samples. The arrangement further comprises a thermal chuck and a circuit board, which is configured to provide electrical connection to the reference samples in the socket mount and DUTs in the sample sockets. The thermal chuck is configured to thermalize the socket mount and the circuit board to a temperature set point.

Abstract: In an embodiment a sensor device include a first sensor including a heating element configured to heat up the first sensor in a controllable manner and a second sensor thermally coupled to the heating element of the first sensor such that the heating element is further configured to heat up the second sensor in a controllable manner.

Abstract: A calibration arrangement has a sealable and thermally-isolated chamber comprising a socket mount having a number of reference samples in thermal contact with the socket mount and a number of sample sockets for devices-under test, DUTs, with each sample socket being arranged in proximity to and associated to at least one of the reference samples. The arrangement further comprises a thermal chuck and a circuit board, which is configured to provide electrical connection to the reference samples in the socket mount and DUTs in the sample sockets. The thermal chuck is configured to thermalize the socket mount and the circuit board to a temperature set point.

Abstract: The sensor semiconductor device comprises a substrate (1) with a main surface (2), a sensor region (3) on or above the main surface, a coating layer (4) above the main surface, and a trench (5) formed in the coating layer around the sensor region. The trench provides drainage of a liquid from the coating layer.

Abstract: The sensor semiconductor device comprises a substrate (1) with a main surface (2), a sensor region (3) on or above the main surface, a coating layer (4) above the main surface, and a trench (5) formed in the coating layer around the sensor region. The trench provides drainage of a liquid from the coating layer.

Abstract: One example discloses an interferometer device, including: a first side, having a first reflectivity; a second side, having a second reflectivity; a cavity disposed between the first and second sides, and having an opening configured to receive a substance; an electromagnetic source input region configured to receive an electromagnetic signal; and an electromagnetic detector output region configured to output the electromagnetic signal modulated in response to the substance in the cavity.

Abstract: The invention discloses a process for manufacturing a radiation detector for detecting e.g. 200 eV electrons. This makes the detector suited for e.g. use in an Scanning Electron Microscope. The detector is a PIN photodiode with a thin layer of pure boron connected to the p+-diffusion layer. The boron layer is connected to an electrode with an aluminium grid to form a path of low electrical resistance between each given point of the boron layer and the electrode. The invention addresses forming the aluminium grid on the boron layer without damaging the boron layer.