Abstract: An apparatus and method for graphene film synthesis. The apparatus includes a quasi-enclosed substrate holder which includes one open side, a cap disposed over the one open side of the quasi enclosed substrate holder, and a substrate for graphene film synthesis located inside the quasi enclosed substrate holder. The method includes placing a substrate for graphene film synthesis inside of a quasi-enclosed substrate holder and generating a graphene film on the substrate via chemical vapor deposition, wherein the quasi enclosed substrate holder includes one open side and a cap disposed over the open side of the quasi enclosed substrate holder.

Abstract: A nanotube-graphene hybrid film and method for forming a cleaned nanotube-graphene hybrid film. The nanotube-graphene hybrid film includes a substrate; nanotube film deposited over the substrate to produce a layer of nanotube film; and graphene deposited over the layer of nanotube film to produce a nanotube-graphene hybrid film.

Abstract: An apparatus and method for graphene film synthesis. The apparatus includes a quasi-enclosed substrate holder which includes one open side, a cap disposed over the one open side of the quasi enclosed substrate holder, and a substrate for graphene film synthesis located inside the quasi enclosed substrate holder. The method includes placing a substrate for graphene film synthesis inside of a quasi-enclosed substrate holder and generating a graphene film on the substrate via chemical vapor deposition, wherein the quasi enclosed substrate holder includes one open side and a cap disposed over the open side of the quasi enclosed substrate holder.

Abstract: An apparatus and method for graphene film synthesis. The apparatus includes a quasi enclosed substrate holder which includes one open side, a cap disposed over the one open side of the quasi enclosed substrate holder, and a substrate for graphene film synthesis located inside the quasi enclosed substrate holder. The method includes placing a substrate for graphene film synthesis inside of a quasi enclosed substrate holder and generating a graphene film on the substrate via chemical vapor deposition, wherein the quasi enclosed substrate holder includes one open side and a cap disposed over the open side of the quasi enclosed substrate holder.

Abstract: A nanotube-graphene hybrid nano-component and method for forming a cleaned nanotube-graphene hybrid nano-component. The nanotube-graphene hybrid nano-component includes a gate; a gate dielectric formed on the gate; a channel comprising a carbon nanotube-graphene hybrid nano-component formed on the gate dielectric; a source formed over a first region of the carbon nanotube-graphene hybrid nano-component; and a drain formed over a second region of the carbon nanotube-graphene hybrid nano-component to form a field effect transistor.

Abstract: A nanotube-graphene hybrid film and method for forming a cleaned nanotube-graphene hybrid film. A method includes depositing nanotube film over a metal foil to produce a layer of nanotube film, placing the metal foil with as-deposited nanotube film in a chemical vapor deposition furnace to grow graphene on the nanotube film to form a nanotube-graphene hybrid film, and transferring the nanotube-graphene hybrid film over a substrate.

Abstract: A method to transfer a layer of graphene from one substrate to another substrate is provided. The method includes providing a first layered structure including, from bottom to top, a copper foil, a layer of graphene, an adhesive layer and a carrier substrate. The copper foil is removed exposing a surface of the layer of graphene. Next, an oxide bonding enhancement dielectric layer is formed on the exposed surface of the layer of graphene. A second layered structure including a receiver substrate and a dielectric oxide layer is provided. Next, an exposed surface of the dielectric oxide layer is bonded to an exposed surface of the oxide bonding enhancement dielectric layer. The carrier substrate and the adhesive layer are removed exposing the layer of graphene.

Abstract: A method to transfer a layer of graphene from one substrate to another substrate is provided. The method includes providing a first layered structure including, from bottom to top, a copper foil, a layer of graphene, an adhesive layer and a carrier substrate. The copper foil is removed exposing a surface of the layer of graphene. Next, an oxide bonding enhancement dielectric layer is formed on the exposed surface of the layer of graphene. A second layered structure including a receiver substrate and a dielectric oxide layer is provided. Next, an exposed surface of the dielectric oxide layer is bonded to an exposed surface of the oxide bonding enhancement dielectric layer. The carrier substrate and the adhesive layer are removed exposing the layer of graphene.

Abstract: A method to transfer a layer of graphene from one substrate to another substrate is provided. The method includes providing a first layered structure including, from bottom to top, a copper foil, a layer of graphene, an adhesive layer and a carrier substrate. The copper foil is removed exposing a surface of the layer of graphene. Next, an oxide bonding enhancement dielectric layer is formed on the exposed surface of the layer of graphene. A second layered structure including a receiver substrate and a dielectric oxide layer is provided. Next, an exposed surface of the dielectric oxide layer is bonded to an exposed surface of the oxide bonding enhancement dielectric layer. The carrier substrate and the adhesive layer are removed exposing the layer of graphene.

Abstract: A method and system are disclosed for separating single-walled carbon nanotubes from double and multi-walled carbon nanotubes by using the difference in the buoyant density of Single-Walled versus Multi-Walled carbon nanotubes. In one embodiment, the method comprises providing a vessel with first and second solutions. The first solution comprises a quantity of carbon nanotubes, including single-walled carbon nanotubes and double and multi-walled carbon nanotubes. The single walled nanotubes have a first density, the double and multi-walled nanotubes having a second density. The second solution in the vessel has a third density between said first and second densities. The vessel is centrifuged to faun first and second layers in the vessel, with the second solution between said first and second layers. The single-walled carbon nanotubes are predominantly in the first layer, and the second and multi-walled carbon nanotubes are predominantly in the second layer.

Abstract: A nanotube-graphene hybrid film and method for forming a cleaned nanotube-graphene hybrid film. The nanotube-graphene hybrid film includes a substrate; nanotube film deposited over the substrate to produce a layer of nanotube film; and graphene deposited over the layer of nanotube film to produce a nanotube-graphene hybrid film.

Abstract: A nanotube-graphene hybrid film and method for forming a cleaned nanotube-graphene hybrid film. A method includes depositing nanotube film over a metal foil to produce a layer of nanotube film, placing the metal foil with as-deposited nanotube film in a chemical vapor deposition furnace to grow graphene on the nanotube film to form a nanotube-graphene hybrid film, and transferring the nanotube-graphene hybrid film over a substrate.

Abstract: A nanotube-graphene hybrid nano-component and method for forming a cleaned nanotube-graphene hybrid nano-component. The nanotube-graphene hybrid nano-component includes a gate; a gate dielectric formed on the gate; a channel comprising a carbon nanotube-graphene hybrid nano-component formed on the gate dielectric; a source formed over a first region of the carbon nanotube-graphene hybrid nano-component; and a drain formed over a second region of the carbon nanotube-graphene hybrid nano-component to form a field effect transistor.

Abstract: A nanotube-graphene hybrid film and method for forming a cleaned nanotube-graphene hybrid film. The method includes depositing nanotube film over a substrate to produce a layer of nanotube film, removing impurities from a surface of the layer of nanotube film not contacting the substrate to produce a cleaned layer of nanotube film, depositing a layer of graphene over the cleaned layer of nanotube film to produce a nanotube-graphene hybrid film, and removing impurities from a surface of the nanotube-graphene hybrid film to produce a cleaned nanotube-graphene hybrid film, wherein the hybrid film has improved electrical performance. Another method includes depositing nanotube film over a metal foil to produce a layer of nanotube film, placing the metal foil with as-deposited nanotube film in a chemical vapor deposition furnace to grow graphene on the nanotube film to form a nanotube-graphene hybrid film, and transferring the nanotube-graphene hybrid film over a substrate.

Abstract: A contiguous layer of graphene is formed on exposed sidewall surfaces and a topmost surface of a copper-containing structure that is present on a surface of a substrate. The presence of the contiguous layer of graphene on the copper-containing structure reduces copper oxidation and surface diffusion of copper ions and thus improves the electromigration resistance of the structure. These benefits can be obtained using graphene without increasing the resistance of copper-containing structure.

Abstract: A method for forming a single, few-layer, or multi-layer graphene and structure is described incorporating selecting a substrate having a buried layer of carbon underneath a metal layer, providing an ambient and providing a heat treatment to pass carbon through the metal layer to form a graphene layer on the metal layer surface or incorporating a metal-carbon layer which is heated to segregate carbon in the form of graphene to the surface or chemically reacting the metal in the metal-carbon layer with a substrate containing Si driving the carbon to the surface whereby graphene is formed.

Abstract: A contiguous layer of graphene is formed on exposed sidewall surfaces and a topmost surface of a copper-containing structure that is present on a surface of a substrate. The presence of the contiguous layer of graphene on the copper-containing structure reduces copper oxidation and surface diffusion of copper ions and thus improves the electromigration resistance of the structure. These benefits can be obtained using graphene without increasing the resistance of copper-containing structure.

Abstract: A contiguous layer of graphene is formed on exposed sidewall surfaces and a topmost surface of a copper-containing structure that is present on a surface of a substrate. The presence of the contiguous layer of graphene on the copper-containing structure reduces copper oxidation and surface diffusion of copper ions and thus improves the electromigration resistance of the structure. These benefits can be obtained using graphene without increasing the resistance of copper-containing structure.

Abstract: A contiguous layer of graphene is formed on exposed sidewall surfaces and a topmost surface of a copper-containing structure that is present on a surface of a substrate. The presence of the contiguous layer of graphene on the copper-containing structure reduces copper oxidation and surface diffusion of copper ions and thus improves the electromigration resistance of the structure. These benefits can be obtained using graphene without increasing the resistance of copper-containing structure.

Abstract: A contiguous layer of graphene is formed on exposed sidewall surfaces and a topmost surface of a copper-containing structure that is present on a surface of a substrate. The presence of the contiguous layer of graphene on the copper-containing structure reduces copper oxidation and surface diffusion of copper ions and thus improves the electromigration resistance of the structure. These benefits can be obtained using graphene without increasing the resistance of copper-containing structure.