Patents by Inventor Agha Jahanzeb

Agha Jahanzeb has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240097490
    Abstract: An electronic device can include a metallic housing defining an interior that contains one or more systems of the electronic device. The metallic housing can further define a pocket within the metallic housing separated from the interior. The pocket can have a window to an exterior of the metallic housing to facilitate wireless power transfer. An electronic device can include a non-metallic housing defining an interior that contains one or more systems of the electronic device and a wireless power transfer module that further includes a metallic structure defining a receptacle separated from the interior housing. The receptacle can have at least one open side to facilitate wireless power transfer. In either case, the wireless power transfer coil can be disposed at least partially or completely within the pocket or receptacle.
    Type: Application
    Filed: February 9, 2023
    Publication date: March 21, 2024
    Inventors: Agha Jahanzeb, Arash Akhavan Fomani, Matthew J. Chabalko
  • Patent number: 5850098
    Abstract: A thermal detector includes a transducer layer of semiconducting yttrium barium copper oxide which is sensitive at room temperature to radiation and provides detection of infrared radiation. In a gate-insulated transistor embodiment, a layer of ferroelectric semiconducting yttrium barium copper oxide forms a gate insulator layer and increases capacitance of the transistor or latches the transistor according to the polarization direction of the ferroelectric layer. The transducer layer may be formed as an amorphous semiconductor and deposited at room temperature by simple sputtering. The sensitive element can be incorporated into a thermal isolation structure as part of an integrated circuit.
    Type: Grant
    Filed: May 29, 1998
    Date of Patent: December 15, 1998
    Assignee: Research Corporation Technologies, Inc.
    Inventors: Donald P. Butler, Zeynep Celik-Butler, Pao-Chuan Shan, Agha Jahanzeb
  • Patent number: 5821598
    Abstract: A thermal detector includes a transducer layer of semiconducting yttrium barium copper oxide which is sensitive at room temperature to radiation and provides detection of infrared radiation. In a gate-insulated transistor embodiment, a layer of ferroelectric semiconducting yttrium barium copper oxide forms a gate insulator layer and increases capacitance of the transistor or latches the transistor according to the polarization direction of the ferroelectric layer. The transducer layer may be formed as an amorphous semiconductor and deposited at room temperature by simple sputtering. The sensitive element can be incorporated into a thermal isolation structure as part of an integrated circuit.
    Type: Grant
    Filed: June 21, 1996
    Date of Patent: October 13, 1998
    Assignee: Research Corporation Technologies, Inc.
    Inventors: Donald P. Butler, Zeynep Celik-Butler, Pao-Chuan Shan, Agha Jahanzeb