Abstract: An electronic device can include a metallic housing defining an interior that contains one or more systems of the electronic device. The metallic housing can further define a pocket within the metallic housing separated from the interior. The pocket can have a window to an exterior of the metallic housing to facilitate wireless power transfer. An electronic device can include a non-metallic housing defining an interior that contains one or more systems of the electronic device and a wireless power transfer module that further includes a metallic structure defining a receptacle separated from the interior housing. The receptacle can have at least one open side to facilitate wireless power transfer. In either case, the wireless power transfer coil can be disposed at least partially or completely within the pocket or receptacle.

Abstract: A thermal detector includes a transducer layer of semiconducting yttrium barium copper oxide which is sensitive at room temperature to radiation and provides detection of infrared radiation. In a gate-insulated transistor embodiment, a layer of ferroelectric semiconducting yttrium barium copper oxide forms a gate insulator layer and increases capacitance of the transistor or latches the transistor according to the polarization direction of the ferroelectric layer. The transducer layer may be formed as an amorphous semiconductor and deposited at room temperature by simple sputtering. The sensitive element can be incorporated into a thermal isolation structure as part of an integrated circuit.

Abstract: A thermal detector includes a transducer layer of semiconducting yttrium barium copper oxide which is sensitive at room temperature to radiation and provides detection of infrared radiation. In a gate-insulated transistor embodiment, a layer of ferroelectric semiconducting yttrium barium copper oxide forms a gate insulator layer and increases capacitance of the transistor or latches the transistor according to the polarization direction of the ferroelectric layer. The transducer layer may be formed as an amorphous semiconductor and deposited at room temperature by simple sputtering. The sensitive element can be incorporated into a thermal isolation structure as part of an integrated circuit.