Abstract: A spintronic device and a method for making said spintronic device. The spintronic device includes an epitaxial crystalline ferromagnetic oxide formed directly on the semiconductor material thereby allowing spin-polarized current to be efficiently injected from the ferromagnetic oxide into the semiconductor material. A host crystal lattice includes multiple sets of stacked oxide layers of material A and B of a perovskite structure with a formula of ABO3. After an oxide layer of B is grown, magnetic ions are introduced to intermix with the B material, which may replace some of the ions of the B material. The process of growing additional stacked oxide layers of material A and B and introducing further magnetic ions after the deposition of the oxide layer of B continues until enough magnetic ions are sufficiently close to one another that they align in the same direction thereby forming a ferromagnetic oxide on the semiconductor material.

Abstract: A spintronic device and a method for making said spintronic device. The spintronic device includes an epitaxial crystalline ferromagnetic oxide formed directly on the semiconductor material thereby allowing spin-polarized current to be efficiently injected from the ferromagnetic oxide into the semiconductor material. A host crystal lattice includes multiple sets of stacked oxide layers of material A and B of a perovskite structure with a formula of ABO3. After an oxide layer of B is grown, magnetic ions are introduced to intermix with the B material, which may replace some of the ions of the B material. The process of growing additional stacked oxide layers of material A and B and introducing further magnetic ions after the deposition of the oxide layer of B continues until enough magnetic ions are sufficiently close to one another that they align in the same direction thereby forming a ferromagnetic oxide on the semiconductor material.

Abstract: A spintronic device and a method for making said spintronic device. The spintronic device includes an epitaxial crystalline ferromagnetic oxide formed directly on the semiconductor material thereby allowing spin-polarized current to be efficiently injected from the ferromagnetic oxide into the semiconductor material. A host crystal lattice includes multiple sets of stacked oxide layers of material A and B of a perovskite structure with a formula of ABO3. After an oxide layer of B is grown, magnetic ions are introduced to intermix with the B material, which may replace some of the ions of the B material. The process of growing additional stacked oxide layers of material A and B and introducing further magnetic ions after the deposition of the oxide layer of B continues until enough magnetic ions are sufficiently close to one another that they align in the same direction thereby forming a ferromagnetic oxide on the semiconductor material.

Abstract: A spintronic device and a method for making said spintronic device. The spintronic device includes an epitaxial crystalline ferromagnetic oxide formed directly on the semiconductor material thereby allowing spin-polarized current to be efficiently injected from the ferromagnetic oxide into the semiconductor material. A host crystal lattice includes multiple sets of stacked oxide layers of material A and B of a perovskite structure with a formula of ABO3. After an oxide layer of B is grown, magnetic ions are introduced to intermix with the B material, which may replace some of the ions of the B material. The process of growing additional stacked oxide layers of material A and B and introducing further magnetic ions after the deposition of the oxide layer of B continues until enough magnetic ions are sufficiently close to one another that they align in the same direction thereby forming a ferromagnetic oxide on the semiconductor material.