Patents by Inventor Agnès Barthelemy

Agnès Barthelemy has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9312471
    Abstract: The invention relates to a method of implementing a ferroelectric tunnel junction, said junction comprising to films each forming an electrode-type conductive element, and separated by a film forming a ferroelectric element acting as the tunnel barrier, said ferroelectric element being able to possess a remanent polarization.
    Type: Grant
    Filed: April 2, 2012
    Date of Patent: April 12, 2016
    Assignees: THALES, UNIVERSITE PARIS-SUD, CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE
    Inventors: Manuel Bibes, Vincent Garcia, Agnès Barthelemy, Karim Bouzehouane, Stéphane Fusil
  • Publication number: 20150364536
    Abstract: The invention relates to a device (10) including a plurality of thin layers (12, 14, 18) comprising a layer (14) formed with a polarizable ferroelectric material according to several polarization directions depending on an electric voltage applied to said layer of ferroelectric material, surrounded by a pair of conductive layers (12, 18) forming electrodes. The device of the invention comprises an intermediate layer (16) between said ferroelectric material layer (14) and one of the conductive layers (12, 18), said intermediate layer (16) consisting of a material for which the electronic properties are modified according to the direction of polarization in said adjacent ferroelectric material layout (14). The device for the invention finds particularly advantageous applications as a memory element of a non-volatile memory, as an element of a programmable logic circuit and as a microswitch.
    Type: Application
    Filed: July 19, 2013
    Publication date: December 17, 2015
    Inventors: Manuel Bibes, Agnes Barthelemy
  • Publication number: 20140169061
    Abstract: The invention relates to a method of implementing a ferroelectric tunnel junction, said junction comprising to films each forming an electrode-type conductive element, and separated by a film forming a ferroelectric element acting as the tunnel barrier, said ferroelectric element being able to possess a remanent polarization.
    Type: Application
    Filed: April 2, 2012
    Publication date: June 19, 2014
    Applicants: THALES, UNIVERSITE PARIS-SUD, CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE (C.N.R.S)
    Inventors: Manuel Bibes, Vincent Garcia, Agnès Barthelemy, Karim Bouzehouane, Stéphane Fusil